公开(公告)号：US20180174869A1

公开(公告)日：2018-06-21

申请号：US15652345

申请日：2017-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONG-MOON HA ,  Min-Kyu SUNG ,  Seung-Hee CHO ,  Seong-Chul CHOI ,  Kyung-Sun KIM ,  Sang-Ho LEE

IPC: H01L21/67 ,  H01J37/32

Abstract: A temperature controller of a plasma-processing apparatus including a heating unit and a cooling unit. The heating unit is configured to heat a liner on an inner surface of a plasma chamber in which a plasma is formed. The cooling unit is configured to cool the liner to controls a temperature of an upper electrode in the plasma chamber.

公开(公告)号：US20230145476A1

公开(公告)日：2023-05-11

申请号：US17833438

申请日：2022-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongha JEONG ,  Kyung-Sun KIM ,  Dongwan KIM ,  Donghyeon NA ,  Dougyong SUNG ,  Myeongsoo SHIN ,  Ungyo JUNG

IPC: H01L21/683 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4585 ,  C23C16/4586

Abstract: A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.

公开(公告)号：US20160027652A1

公开(公告)日：2016-01-28

申请号：US14678491

申请日：2015-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin JEON ,  Kyung-Sun KIM ,  DOUGYONG SUNG ,  Tae-Hwa KIM ,  Heungsik PARK ,  Jung Min KIM

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

公开(公告)号：US20240120177A1

公开(公告)日：2024-04-11

申请号：US18370268

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Mo LEE ,  Dong Hyeon NA ,  Myeong Soo SHIN ,  Woong Jin CHEON ,  Kyung-Sun KIM ,  Jae Bin KIM ,  Tae-Hwa KIM ,  Seung Bo SHIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/32669 ,  H01L21/3065 ,  H01J2237/334

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

公开(公告)号：US20170358475A1

公开(公告)日：2017-12-14

申请号：US15608140

申请日：2017-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ohyung KWON ,  Kyung-Sun KIM ,  Jae-Hoon KIM ,  Doug-Yong SUNG

IPC: H01L21/683 ,  H01L21/48 ,  H01J37/32 ,  H01L21/687 ,  H01L21/764 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01J37/321 ,  H01J37/32697 ,  H01L21/4871 ,  H01L21/6831 ,  H01L21/687 ,  H01L21/764 ,  H02N13/00

Abstract: An electrostatic chuck assembly includes a dielectric plate having an absorption electrode to generate an electrostatic force, the dielectric plate securing a substrate by the electrostatic force, a conductive base plate under the dielectric plate to be applied with a high frequency electric power, the conductive base plate being an electrode to generate plasma, and an insulating plate under the base plate, the insulating plate having an insulation body and an insulation sink, and the insulation sink having a dielectric constant lower than that of the insulation body.

公开(公告)号：US20140251956A1

公开(公告)日：2014-09-11

申请号：US14199160

申请日：2014-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Yub JEON ,  Jeong-Yun LEE ,  Kyung-Sun KIM ,  Tae-Gon KIM

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715

Abstract: An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

Abstract translation: 一种用于蚀刻工艺的设备包括：室，设置在室中的等离子体发生器，堆叠结构，设置在室中以在其上支撑基板，并且在电极板上包括电极板和绝缘涂层，电极棒插入 层叠结构的孔穿透堆叠结构，直接接触基板并与堆叠结构的通孔的侧壁间隔开，至少一个DC脉冲发生器首先向电极板和电极棒产生DC脉冲 将DC脉冲发生器连接到电极棒的连接线以及将DC脉冲发生器连接到电极板的下部的至少一个第二连接线。