公开(公告)号：US20230178439A1

公开(公告)日：2023-06-08

申请号：US17950512

申请日：2022-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun LEE ,  Hyojung NOH ,  Minwoo SONG ,  Yongho HA ,  Jeongwon HWANG

IPC: H01L21/8234 ,  H01L27/108 ,  H01L29/06

CPC classification number: H01L21/823493 ,  H01L21/823462 ,  H01L27/10823 ,  H01L27/10876 ,  H01L29/0623

Abstract: A method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes an forming a trench in a substrate, forming a gate dielectric layer on the trench, forming a gate layer on the gate dielectric layer, and annealing the gate dielectric layer and the gate layer, wherein, after the first annealing operation, the gate layer includes a molybdenum-tantalum alloy.

公开(公告)号：US20210183861A1

公开(公告)日：2021-06-17

申请号：US16930398

申请日：2020-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu LEE ,  Kiseok LEE ,  Minwoo SONG ,  Hyun-Sil OH ,  Min Hee CHO

IPC: H01L27/108 ,  G11C7/18 ,  G11C8/14

Abstract: A three-dimensional semiconductor device includes a first channel pattern on and spaced apart from a substrate, the first channel pattern having a first end and a second end that are spaced apart from each other in a first direction parallel to a top surface of the substrate, and a first sidewall and a second sidewall connecting between the first end and the second end, the first and second sidewalls being spaced apart from each other in a second direction parallel to the top surface of the substrate, the second direction intersecting the first direction, a bit line in contact with the first end of the first channel pattern, the bit line extending in a third direction perpendicular to the top surface of the substrate, and a first gate electrode adjacent to the first sidewall of the first channel pattern.

公开(公告)号：US20210039639A1

公开(公告)日：2021-02-11

申请号：US16944630

申请日：2020-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo SONG ,  Kyungjin YOON ,  Chulmin LEE ,  Jaeseung CHO

IPC: B60W30/095 ,  B60W50/16 ,  B60R11/04 ,  G01C21/34 ,  G06K9/32 ,  G06K9/00 ,  G06F21/32

Abstract: An electronic device and method are disclosed herein. The electronic device includes communication circuitry, an output interface, memory and a processor. The processor implements the method, including: storing, in the memory, accident modeling information including at least one of a history of accidents at a present location, and a first driver profile of a driver associated with the history of accidents at the present location, receiving at least a portion of a second driver profile from at least one external vehicle proximate to the vehicle via the communication circuitry, the second driver profile indicating driving characteristics of a driver of the at least one external vehicle, generating accident risk information based at least on the accident modeling information and the second driver profile, and outputting the generated accident risk information through the output interface.

公开(公告)号：US20210089074A1

公开(公告)日：2021-03-25

申请号：US16971049

申请日：2019-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo SONG ,  Younghyun BAN ,  Juyoung LIM ,  Chulmin LEE

IPC: G06F1/10 ,  G06F1/06 ,  H03K5/00

Abstract: Disclosed are an integrated circuit for controlling function modules to a low-power status depending on an operating status, an electronic device, and a control method thereof. An integrated circuit includes at least one clock generator, a clock distribution circuit that distributes a clock generated by the at least one clock generator, a plurality of function modules that receive the clock distributed by the clock distribution circuit, a monitoring circuit that monitors operating statuses of the at least one clock generator and the clock distribution circuit, a memory, and at least one control circuit. When the operating statuses of the at least one clock generator and the clock distribution circuit monitored by the monitoring circuit correspond to a specified operating status, the at least one control circuit is configured to control at least one of at least one function module of the plurality of function modules, the at least one clock generator, or the clock distribution circuit based on a specified control method. Moreover, various embodiment found through the disclosure are possible.

公开(公告)号：US20180096754A1

公开(公告)日：2018-04-05

申请号：US15691169

申请日：2017-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo SONG ,  Jungho KIM ,  Euichan JUNG ,  Jiwoo LEE

IPC: H01B11/00 ,  H02J7/00 ,  G03B13/36 ,  G03B5/04 ,  G01P13/00 ,  G01P15/08

CPC classification number: H01B11/002 ,  G01P13/00 ,  G01P15/0802 ,  G03B5/04 ,  G03B13/36 ,  G03B2205/0069 ,  H02J7/0068 ,  H02J7/025 ,  H02K1/22 ,  H04N5/225 ,  H04N5/23287 ,  H05K1/0228 ,  H05K1/189 ,  H05K2201/093 ,  H05K2201/09672

Abstract: An electronic device and a noise control method thereof are provided. The electronic device includes a cable having a first layer forming a first power line and a second layer forming a second power line. The first and second layers are arranged in a vertical stack structure. The cable cancels a magnetic field generated by a current in charging and discharging a battery cell of the electronic device, and removes a noise due to a magnetic field generated from a coil-contained component of the electronic device. Other various embodiments are possible.

公开(公告)号：US20170026752A1

公开(公告)日：2017-01-26

申请号：US15181911

申请日：2016-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euichan JUNG ,  Minwoo SONG ,  Chulhyung YANG ,  Jiwoo LEE

IPC: H04R5/04 ,  H04R29/00

CPC classification number: H04R5/04 ,  H04R29/001 ,  H04R2420/05

Abstract: An electronic device and a method for controlling output through an external output device are provided. The electronic device includes a housing, a receptacle formed so as to receive one of a first external connector and a second external connector, and a circuit electrically coupled to the receptacle. The first external connector includes first, second, third, and fourth terminals. The second external connector includes first, second, third, and fourth terminals. The circuit is configured to detect whether one of the first and second external connectors is inserted into the receptacle, and, based on results of detection, provide an audio output to the first external connector in a first manner if the first external connector is inserted, and provide the audio output to the second external connector in a second manner different from the first manner if the second external connector is inserted.

Abstract translation: 提供了一种通过外部输出装置控制输出的电子装置和方法。 电子设备包括壳体，形成为容纳第一外部连接器和第二外部连接器中的一个的插座以及电连接到插座的电路。 第一外部连接器包括第一，第二，第三和第四端子。 第二外部连接器包括第一，第二，第三和第四端子。 电路被配置为检测第一和第二外部连接器中的一个是否插入到插座中，并且基于检测结果，如果插入第一外部连接器，则以第一方式向第一外部连接器提供音频输出， 并且如果插入第二外部连接器，则以与第一方式不同的第二方式将音频输出提供给第二外部连接器。

公开(公告)号：US20230219513A1

公开(公告)日：2023-07-13

申请号：US18174210

申请日：2023-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo SONG ,  Chulmin LEE ,  Jaeseung CHO

IPC: B60R16/023 ,  B60W50/04

CPC classification number: B60R16/0232 ,  B60W50/045

Abstract: A method of determining a target path according to a source electronic control unit (ECU) mounted on a vehicle is provided. The method includes obtaining state information of a plurality of paths connecting the source ECU with a destination ECU, selecting the target path for target data from among the plurality of paths based on the state information, and transmitting the target data to the destination ECU through an ECU located on the selected target path, the state information including information about at least one of power consumption of an ECU located on the paths, a temperature of the ECU located on the paths, a latency of the paths, and a transmission success rate of the paths.

公开(公告)号：US20230197806A1

公开(公告)日：2023-06-22

申请号：US18113116

申请日：2023-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namgyu CHO ,  Minwoo SONG ,  Ohseong KWON ,  Wandon KIM ,  Hyeokjun SON ,  Jinkyu JANG

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66

CPC classification number: H01L29/41791 ,  H01L29/7855 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/0673 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7854 ,  H01L29/66439 ,  H01L29/4966

Abstract: A semiconductor device includes: an active fin disposed on a substrate; a gate structure overlapping the active fin; source/drain regions disposed on both sides of the gate structure and on the active fin; and contact structures respectively connected to the source/drain regions, wherein the gate structure includes: a pair of gate spacers spaced apart from each other to provide a trench; a first gate electrode disposed in the trench and extending along an upper surface and a lateral surface of the active fin; a second gate electrode disposed on the first gate electrode in the trench, wherein the first gate electrode is not disposed between the second gate electrode and the pair of gate spacers; and a gate insulating film disposed between the pair of gate spacers and interposed between the first gate electrode and the active fin.

公开(公告)号：US20170084507A1

公开(公告)日：2017-03-23

申请号：US15273933

申请日：2016-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangyub IE ,  Minwoo SONG ,  Jonghan LEE ,  Hyungsuk JUNG ,  Hyeri HONG

IPC: H01L21/66 ,  H01L29/49 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L22/34 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L22/14 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method of fabricating a semiconductor device includes forming first and second fin patterns in an active region and in a measurement region of a substrate, respectively, the measurement region being different from the active region, forming first and second gate electrodes to cross the first and second fin patterns, respectively, and measuring a contact potential difference (Vcpd) of the second gate electrode to determine a threshold voltage of the first gate electrode based on the measured contact potential difference (Vcpd).