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    CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR
    2.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR 审中-公开
    具有SUSCEPTOR的化学气相沉积装置

    公开(公告)号：US20130255578A1

    公开(公告)日：2013-10-03

    申请号：US13798772

    申请日：2013-03-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tan SAKONG ,  Do Young RHEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM ,  Sung Tae KIM

    IPC: H01L21/02

    CPC classification number: H01L21/02104 ,  C23C16/4584 ,  C23C16/46

    Abstract: A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate.

    Abstract translation: 可以提供包括室，腔室中的基座和加热室的化学气相沉积（CVD）设备。 基座包括转子，联接到转子的下部的旋转轴，耦合到旋转轴的驱动装置和限定在转子的上表面的至少一个凹部。 驱动装置可旋转地驱动旋转轴。 所述至少一个口袋包括被配置为在其上容纳衬底的安装部分和从所述至少一个口袋的底表面突出的突出部分，例如凸起部分，使得所述突出部分位于对应于 旋转轴。 加热单元围绕旋转轴并加热基板。

    CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME
    3.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME 审中-公开
    化学蒸气沉积装置及其形成使用其的半导体外延薄膜的方法

    公开(公告)号：US20150037920A1

    公开(公告)日：2015-02-05

    申请号：US14518948

    申请日：2014-10-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong Sun MAENG ,  Young Sun KIM ,  Hyun Wook SHIM ,  Sung Tae KIM

    IPC: H01L33/00

    CPC classification number: H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

    Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

    Abstract translation: 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

    METHOD OF MANUFACTURING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY
    4.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY 审中-公开
    制造发光二极管和发光二极管的方法

    公开(公告)号：US20140147954A1

    公开(公告)日：2014-05-29

    申请号：US14167877

    申请日：2014-01-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

    IPC: H01L33/00

    CPC classification number: H01L33/0075 ,  H01L33/007 ,  H01L33/32

    Abstract: There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

    Abstract translation: 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号：US20130244353A1

    公开(公告)日：2013-09-19

    申请号：US13844569

    申请日：2013-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Do Young RHEE ,  Tan SAKONG ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM ,  Sung Tae KIM

    IPC: H01L33/00 ,  H01L33/26

    CPC classification number: H01L33/005 ,  H01L33/26

    Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

    Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    氮化物半导体发光器件

    公开(公告)号：US20130168639A1

    公开(公告)日：2013-07-04

    申请号：US13733586

    申请日：2013-01-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong Hyun LEE ,  Sang Heon HAN ,  Jin Young LIM ,  Young Sun KIM

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

    Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.

    Abstract translation: 氮化物半导体发光器件包括第一和第二氮化物半导体层。 有源层设置在第一和第二氮化物半导体层之间。 电流扩散层设置在第二氮化物半导体层和有源层之间。 电流扩散层包括交替层叠的第一氮化物薄膜和第二氮化物薄膜。 第一氮化物薄膜具有比第二氮化物薄膜大的带隙。 第一多个第一氮化物薄膜位于电流扩展层的外部第一和第二侧。 第一多个第一氮化物薄膜的厚度大于位于第一多个第一氮化物薄膜之间的第二多个第一氮化物薄膜的厚度。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20150207034A1

    公开(公告)日：2015-07-23

    申请号：US14577826

    申请日：2014-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tan SAKONG ,  Byoung Kyun KIM ,  Tong Ik SHIN ,  Jin Young LIM ,  Young Sun KIM ,  Suk Ho YOON

    IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02

    CPC classification number: H01L33/22 ,  H01L33/10

    Abstract: A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency.

    Abstract translation: 半导体发光器件可以包括形成在衬底上并在其中具有缺陷区域的基底半导体层; 设置在与所述基底半导体层上的所述缺陷区域对应的区域中的空腔; 封盖层，其设置成覆盖所述基底半导体层和所述空腔的至少一个区域; 以及发光结构，其设置在所述覆盖层上并且包括第一导电型半导体层，有源层和第二导电型半导体层。 可以减少在发光结构中形成的晶格缺陷，以提高发光效率。

    LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    发光器件封装及其制造方法

    公开(公告)号：US20150048394A1

    公开(公告)日：2015-02-19

    申请号：US14297233

    申请日：2014-06-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun Wook SHIM ,  Young Sun KIM ,  Jae Sung HYUN

    IPC: H01L33/62 ,  H01L33/52 ,  H01L33/60 ,  H01L33/08 ,  H01L33/50

    CPC classification number: H01L25/0756 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A light emitting device package includes a body including a lead frame part, and a light emitting laminate disposed on the body and electrically connected to the lead frame part to emit light. The light emitting laminate has a multilayer structure in which a plurality of light emitting devices are stacked. In the plurality of light emitting devices, an upper light emitting device is stacked on a lower light emitting device such that vertex portions of the upper light emitting device do not overlap and are offset from vertex portions of the lower light emitting device, and portions of the lower light emitting device are externally exposed.

    Abstract translation: 发光器件封装包括包括引线框架部分的主体和设置在主体上并电连接到引线框架部分以发光的发光层压板。 发光层叠体具有堆叠多个发光元件的多层结构。 在多个发光器件中，上部发光器件堆叠在下部发光器件上，使得上部发光器件的顶点部分不重叠并且偏离下部发光器件的顶点部分，并且部分 下部发光器件被外部暴露。

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