公开(公告)号：US09312026B2

公开(公告)日：2016-04-12

申请号：US14466786

申请日：2014-08-22

Applicant: SanDisk Technologies Inc.

Inventor： Mrinal Kochar ,  Gautam Dusija ,  Chris Avila ,  Yingda Dong ,  Man Mui ,  Yichao Huang ,  Deepak Raghu

IPC: G11C16/16 ,  G11C16/34

CPC classification number: G11C16/3445 ,  G11C16/0483 ,  G11C16/16 ,  G11C2216/18 ,  H01L27/11556 ,  H01L27/11582

Abstract: In a three-dimensional nonvolatile memory, when a block erase failure occurs, zones within a block may be separately verified to see if some zones pass verification. Zones that pass may be designated as good zones and may subsequently be used to store user data while bad zones in the same block may be designated as bad and may not be used for subsequent storage of user data.

Abstract translation: 在三维非易失性存储器中，当发生块擦除故障时，块内的区域可以单独验证，以查看某些区域是否通过验证。 通过的区域可以被指定为良好区域，并且可以随后用于存储用户数据，同一块中的不良区域可能被指定为不良，并且可能不用于用户数据的后续存储。

公开(公告)号：US09009398B2

公开(公告)日：2015-04-14

申请号：US14281432

申请日：2014-05-19

Applicant: SanDisk Technologies Inc.

Inventor： Chris Avila ,  Gautam Dusija ,  Jian Chen ,  Mrinal Kochar ,  Abhijeet Manohar

IPC: G06F12/00 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F11/1072 ,  G06F12/0246 ,  G06F2212/7209 ,  G11C11/5628 ,  G11C16/3418 ,  G11C29/52 ,  G11C2029/0411 ,  G11C2211/5641

Abstract: Data that is stored in a higher error rate format in a nonvolatile memory is backed up in a lower error rate format. Data to be stored may be transferred once to on-chip data latches where it is maintained while it is programmed in both the high error rate format and the low error rate format without being resent to the nonvolatile memory.

公开(公告)号：US09646709B2

公开(公告)日：2017-05-09

申请号：US14851141

申请日：2015-09-11

Applicant: SanDisk Technologies Inc.

Inventor： Philip Reusswig ,  Harish Singidi ,  Deepak Raghu ,  Gautam Dusija ,  Pao-Ling Koh ,  Chris Avila

IPC: G11C16/04 ,  G11C16/34 ,  G06F11/10 ,  G11C29/52 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3431 ,  G06F11/1072 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/349 ,  G11C29/52

Abstract: Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.

公开(公告)号：US09201788B1

公开(公告)日：2015-12-01

申请号：US14520909

申请日：2014-10-22

Applicant: SanDisk Technologies Inc.

Inventor： Chris Avila ,  Gautam Dusija ,  Deepak Raghu ,  Cynthia Hsu ,  Changyuan Chen ,  Farookh Moogat

IPC: G06F12/02 ,  G06F12/06

CPC classification number: G06F12/0246 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0629 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0638 ,  G06F2212/1024 ,  G06F2212/214 ,  G06F2212/7202 ,  G06F2212/7205 ,  G11C11/005 ,  G11C2211/5641

Abstract: In a nonvolatile memory, hybrid blocks are initially written with only lower page data. The hybrid blocks later have middle and upper page data written. For high speed writes, data is written to a hybrid block and two or more Single Level Cell (SLC) blocks. The data from the SLC blocks are copied to the hybrid block at a later time in a folding operation.

Abstract translation: 在非易失性存储器中，混合块最初只写入较低页数据。 混合块后面有中上页数据写入。 对于高速写入，将数据写入混合块和两个或更多个单级单元（SLC）块。 来自SLC块的数据在稍后的折叠操作中被复制到混合块。

公开(公告)号：US08913431B1

公开(公告)日：2014-12-16

申请号：US14274440

申请日：2014-05-09

Applicant: SanDisk Technologies Inc.

Inventor： Xiying Costa ,  Alexander Kwok-Tung Mak ,  Chris Avila ,  Gautam Dusija ,  Man Mui

IPC: G11C16/06 ,  G11C16/04 ,  G11C16/16 ,  G11C16/10

CPC classification number: G11C16/107 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  G11C16/16

Abstract: A 3D NAND stacked non-volatile memory device, comprising: a string comprising a plurality of non-volatile storage elements, the string comprises a channel and extends vertically through layers of the 3D stacked non-volatile memory device, and the plurality of storage elements are subdivided into different groups based on group assignments, each group of the different groups comprises multiple adjacent storage elements of the plurality of storage elements; and a control circuit in communication with the string, the control circuit, to perform a Pseudo Block Operation Mode.

Abstract translation: 一种3D NAND堆叠非易失性存储器件，包括：包括多个非易失性存储元件的串，所述串包括通道并垂直延伸穿过所述3D堆叠非易失性存储器件的层，并且所述多个存储元件 基于组分配被细分为不同的组，每组不同组包括多个存储元件中的多个相邻存储元件; 以及控制电路，与控制电路串联连接，以执行伪块操作模式。

公开(公告)号：US20140359400A1

公开(公告)日：2014-12-04

申请号：US14281243

申请日：2014-05-19

Applicant: SanDisk Technologies Inc.

Inventor： Chris Avila ,  Gautam Dusija ,  Jian Chen ,  Yingda Dong ,  Man Mui ,  Seungpil Lee ,  Alex Mak

IPC: G06F11/10 ,  G06F12/02 ,  G11C29/04

CPC classification number: G06F11/1068 ,  G06F12/0246 ,  G11C16/0483 ,  G11C16/349 ,  G11C29/04 ,  G11C29/82 ,  G11C2213/71

Abstract: Portions of data stored in a three dimensional memory array are selected based on their locations for calculation of redundancy data. Locations are selected so that no two portions in a set of portions for a given calculation are likely to become uncorrectable at the same time. Selected portions may be separated by at least one word line and separated by at least one string in a block.

Abstract translation: 基于它们用于计算冗余数据的位置来选择存储在三维存储器阵列中的部分数据。 选择位置，使得给定计算的一组部分中的两个部分可能在同一时间变得不可校正。 所选择的部分可以被至少一个字线分隔开并且被块中的至少一个字符串隔开。

公开(公告)号：US20170109040A1

公开(公告)日：2017-04-20

申请号：US14918050

申请日：2015-10-20

Applicant: SanDisk Technologies Inc.

Inventor： Deepak Raghu ,  Chris Aviala ,  Harish Singidi ,  Guirong Liang ,  Anne Pao-LIng Koh ,  Dana Lee ,  Gautam Dusija

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0679 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028

Abstract: Systems and methods for sampling data at a non-volatile memory system are disclosed. In one implementation, a controller of a non-volatile memory system that is coupled with a host device acquires a read level voltage of a first word line of a memory block of a non-volatile memory of the non-volatile memory system. The controller accesses one or more lookup tables to determine an offset voltage for a second word line of the memory block based on a program/erase count and a read/disturb count associated with the memory block; applies the read level voltage and the offset voltage to the second word line to sample data stored at the memory block; and determines whether the data sampled from the memory block contains errors.

公开(公告)号：US09626289B2

公开(公告)日：2017-04-18

申请号：US14471465

申请日：2014-08-28

Applicant: SanDisk Technologies Inc.

Inventor： Lei Chen ,  Xinde Hu ,  Zhenlei Shen ,  Yiwei Song ,  Gautam Dusija

IPC: G06F12/00 ,  G06F12/02

CPC classification number: G06F12/0246 ,  G06F12/0253 ,  G06F2212/1016 ,  G06F2212/7205 ,  G06F2212/7208 ,  G06F2212/7211

Abstract: Systems and methods for metablock relinking may be provided. A first physical block of a first metablock may be determined to have a different health than a second physical block of a second metablock based on health indicators of the first and second physical blocks. Each of the health indicators may indicate an extent to which a respective one of the first and second physical blocks may be written to and/or erased before the respective one of the first and second physical blocks becomes defective. The first physical block of the first metablock may be replaced with the second physical block of the second metablock based on a determination that the health of the first physical block of the first metablock is different than the health of the second physical block of the second metablock.

公开(公告)号：US20160099057A1

公开(公告)日：2016-04-07

申请号：US14507245

申请日：2014-10-06

Applicant: SanDisk Technologies Inc.

Inventor： Gautam Dusija ,  Chris Avila ,  Jonathan Hsu ,  Neil Darragh ,  Bo Lei

IPC: G11C16/10 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3459 ,  G11C29/028

Abstract: Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.

Abstract translation: 可以提供适应调整组提前的系统，装置和方法。 修剪设置的进步可能会随着时间的推移而发生变化。 半导体存储器的单元可以具有第一充电水平并且被编程为具有第一调整组。 可以通过将第一充电电平升高到对应于用第二调整组编程的单元的第二充电水平来重新编程单元。

公开(公告)号：US20160055918A1

公开(公告)日：2016-02-25

申请号：US14466786

申请日：2014-08-22

Applicant: SanDisk Technologies Inc.

Inventor： Mrinal Kochar ,  Gautam Dusija ,  Chris Avila ,  Yingda Dong ,  Man Mui ,  Yichao Huang ,  Deepak Raghu

IPC: G11C16/34 ,  G11C16/16

CPC classification number: G11C16/3445 ,  G11C16/0483 ,  G11C16/16 ,  G11C2216/18 ,  H01L27/11556 ,  H01L27/11582

Abstract: In a three-dimensional nonvolatile memory, when a block erase failure occurs, zones within a block may be separately verified to see if some zones pass verification. Zones that pass may be designated as good zones and may subsequently be used to store user data while bad zones in the same block may be designated as bad and may not be used for subsequent storage of user data.

Abstract translation: 在三维非易失性存储器中，当发生块擦除故障时，块内的区域可以单独验证，以查看某些区域是否通过验证。 通过的区域可以被指定为良好区域，并且可以随后用于存储用户数据，同一块中的不良区域可能被指定为不良，并且可能不用于用户数据的后续存储。