公开(公告)号：US06406923B1

公开(公告)日：2002-06-18

申请号：US09630316

申请日：2000-07-31

申请人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

发明人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

IPC分类号： H01L2100

CPC分类号： H01L21/02079 ,  H01L21/02032 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32135

摘要： A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

摘要翻译： 能够在晶片表面上回收具有降低的金属污染水平的已使用的半导体晶片的工艺。 该方法包括通过化学蚀刻去除衬底的一个或多个表面层的步骤; 通过机械加工刮擦少量的基板的一个表面; 通过化学蚀刻去除由于机械加工而发生的损伤层; 并将基板的另一表面抛光成镜面。

公开(公告)号：US06451696B1

公开(公告)日：2002-09-17

申请号：US09384725

申请日：1999-08-27

申请人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

发明人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

IPC分类号： H01L21302

CPC分类号： H01L21/02032

摘要： A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

摘要翻译： 用于回收具有金属膜和电介质膜的晶片衬底材料的方法包括用化学蚀刻剂去除整个金属膜和一部分电介质膜以便基本上不溶解晶片衬底材料本身的步骤， 用于通过化学机械抛光去除基底表面下面的残余介电层和退化区的步骤，以及用于抛光基底的至少一个表面的步骤。

公开(公告)号：US5855735A

公开(公告)日：1999-01-05

申请号：US538265

申请日：1995-10-03

申请人： Satoru Takada ,  Hidetoshi Inoue ,  Yoshihiro Hara

发明人： Satoru Takada ,  Hidetoshi Inoue ,  Yoshihiro Hara

IPC分类号： H01L21/66 ,  B24B9/06 ,  B24B21/00 ,  B24B37/04 ,  H01L21/02 ,  H01L21/30 ,  H01L21/304 ,  C23F3/00

CPC分类号： H01L21/02032 ,  B24B21/00 ,  B24B37/04 ,  B24B9/065 ,  H01L21/02079 ,  H01L21/30

摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed semiconductor wafer can be a silicon wafer having a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

摘要翻译： 一种方法，其包括通过使用旋转垫和研磨​​剂浆料在表面中诱导微裂纹从晶片去除表面层材料，直到除去所有表面层材料; 并化学蚀刻晶片的表面，直到从中除去所有的微裂缝。 边缘材料由砂带除去。 回收期间的晶片厚度减少每周期小于30微米。 对晶片基板的正面和背面之一进行抛光，任何点或凹槽位于非抛光侧。 研磨浆料含有超过6体积％的磨料颗粒，研磨浆料在环境温度下的粘度大于约2cP。 优选的垫包括在肖氏D刻度上硬度大于约40的有机聚合物，最佳地是聚氨酯。 衬垫对晶片表面的压力优选不超过约3psi。 优选地，化学蚀刻溶液含有氢氧化钾。 然后可以将酸性溶液施加到晶片表面。 回收的半导体晶片可以是具有无光泽面的蚀刻凹坑的硅晶片，其宽度不超过20微米，平均粗糙度不超过0.5微米，峰 - 谷粗糙度不超过5微米。 来自原始晶片的任何激光标记存在于晶片的无光泽侧。

公开(公告)号：US5580500A

公开(公告)日：1996-12-03

申请号：US297811

申请日：1994-08-30

申请人： Kazuo Muramatsu ,  Manabu Hisada ,  Hideki Yamamuro ,  Hideo Ashida ,  Satoru Takada ,  Masami Takao ,  Yoshihiro Hara ,  Nobuhiro Ota

发明人： Kazuo Muramatsu ,  Manabu Hisada ,  Hideki Yamamuro ,  Hideo Ashida ,  Satoru Takada ,  Masami Takao ,  Yoshihiro Hara ,  Nobuhiro Ota

IPC分类号： C04B35/524 ,  C01B31/00

CPC分类号： C04B35/524

摘要： A carbon substrate manufacturing method includes a hot molding step, a burn-carbonizing step, a hot isostatical pressure treatment step, and a mirror polishing step. In the hot molding step, molding is performed while heating thermosetting resin powders to be a hard carbon substrate after burn-carbonizing, where the thermosetting resin powders are of a particle size 150 .mu.m or more, HPF 80-150 mm, a moisture content 1.0-3.0 weight %, Fe, Ni, Si and Ca respectively 5 ppm or less. In the burn-carbonizing process, a disk shaped resin molded body is filled into a graphite cylinder and burn-carbonized by heating from the external while the condition therefor is maintained in that the disk shaped resin molded body is stacked holding therein a graphite spacer at every one sheet basis or at every plurality of sheet basis and is loaded on its top with a tungsten carbide weight, where the graphite spacer has a heat conductivity 100 kcal/m.hr..degree. C. or less, a bulk density 1.70-1.85, and a flatness degree 10 .mu.m or less.

摘要翻译： 碳基板制造方法包括热成型步骤，燃烧碳化步骤，热等压压力处理步骤和镜面抛光步骤。 在热成型工序中，在将热固化性树脂粉末在烧成碳化后作为硬质碳基板加热的同时进行成型，其中热固性树脂粉末的粒径为150μm以上，HPF为80-150mm，水分含量 1.0-3.0重量％，Fe，Ni，Si和Ca分别为5ppm以下。 在烧成碳化工序中，将圆盘状树脂成形体填充到石墨圆筒中，通过加热从外部进行燃烧碳化，同时保持其状态，将盘状树脂成型体层叠在一起，将石墨间隔件 每一片或多个片材基础，并以碳化钨重量装载在其顶部，其中石墨间隔物具有100kcal / m·hr的热导率。 ℃以下，体积密度1.70-1.85，平坦度10μm以下。

公开(公告)号：US20060255314A1

公开(公告)日：2006-11-16

申请号：US11129444

申请日：2005-05-16

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C09K13/00 ,  H01L21/461 ,  C09K13/06

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/08 ,  H01L21/02079

摘要： The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

摘要翻译： 研磨浆料含有微晶尺寸为10〜1000nm，平均粒径为30〜2000nm，分子量为1〜20重量％的羧酸的单斜晶氧化锆粒子， 和季铵烷基氢氧化铵，并且具有9至12的pH值。回收晶片的方法包括通过使用上述抛光浆料抛光所用测试晶片并除去形成在晶片上的膜和形成在晶片上的退化层的步骤 表面，对晶片的至少一侧进行镜面抛光的步骤，以及清洁晶片的步骤。

公开(公告)号：US06884634B2

公开(公告)日：2005-04-26

申请号：US10255668

申请日：2002-09-27

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： G01N27/04 ,  H01L21/66 ,  H01L23/544 ,  H01L21/00

CPC分类号： H01L22/34

摘要： A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.

摘要翻译： 一种在包括多个步骤的Si晶片回收处理中指定Cu-污染致动步骤或步骤的方法，包括：使用p型Si晶片或p型Si晶片和n型Si晶片作为监测晶片， 并且在Si晶片回收处理期间，在单个步骤或一系列连续步骤之前和之后，至少进行一次测量监视晶片的电阻的测量操作。 本发明能够非破坏性，简单地且精确地检测在Si晶片回收过程中可能污染Si晶片的Cu，并且能够指定Cu-污染致病过程。

公开(公告)号：US07699997B2

公开(公告)日：2010-04-20

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C03C25/68

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US20050092349A1

公开(公告)日：2005-05-05

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： H01L21/304 ,  C23G1/00 ,  H01L21/02 ,  H01L21/30 ,  H01L21/302 ,  H01L21/306 ,  H01L21/322 ,  H01L21/324

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US5247951A

公开(公告)日：1993-09-28

申请号：US938456

申请日：1992-09-01

申请人： Takao Machida ,  Satoru Takada ,  Kiyoaki Suzuki

发明人： Takao Machida ,  Satoru Takada ,  Kiyoaki Suzuki

IPC分类号： A45D34/04

CPC分类号： A45D34/042 ,  A45D2200/055

摘要： A cosmetic liquid applicator having a tubular shaft, a rotary knob at a rear end of the shaft and a piston axially slidable in the shaft upon rotation of the rotary knob. A nib, mounting to a forward end of the tubular shaft, has a passage communicating with a liquid chamber. A plurality of radially extending pojections are provided so that they are gradually reduced in diameter in the forward direction. A discharge hole is communicated with the passage, and a slot extends forwardly and rearwardly from the discharge hole in opposite directions of and transverse to the projections.

摘要翻译： 一种化妆品液体涂抹器，其具有管状轴，在所述轴的后端处的旋钮和当所述旋钮旋转时在所述轴中可轴向滑动的活塞。 安装到管状轴的前端的笔尖具有与液体室连通的通道。 提供多个径向延伸的突出物，使得它们在向前方向上逐渐减小直径。 排出孔与通道连通，并且槽从排出孔向前和向后延伸，并且与突出部相反并且横向于突起。

公开(公告)号：US09871254B2

公开(公告)日：2018-01-16

申请号：US14122168

申请日：2012-06-14

申请人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

发明人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

IPC分类号： H01M10/052 ,  H01M4/66 ,  H01M4/04

CPC分类号： H01M4/667 ,  H01M4/0402 ,  H01M4/661 ,  H01M4/663 ,  H01M10/052

摘要： Provided is an electrode material with excellent tab weldability and realizing decreased contact resistance with an active material layer. A collector (electrode material) (1) is provided with a metal foil substrate (1a) and a carbon-containing conductive substance (1b), and is configured such that, when observed from a square viewfield with a surface area of 0.1 mm2, the conductive substance (1b) is arranged in islands on the surface of the substrate (1a) with a 1-80% coverage ratio of the conductive substance (1b) on the surface of the substrate (1a).