公开(公告)号：US20220415893A1

公开(公告)日：2022-12-29

申请号：US17891248

申请日：2022-08-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka SHIONOIRI ,  Hiroyuki MIYAKE ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/13 ,  H01L27/115 ,  H01L29/786

Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

公开(公告)号：US20190157309A1

公开(公告)日：2019-05-23

申请号：US16256348

申请日：2019-01-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori IEDA ,  Atsuo ISOBE ,  Yutaka SHIONOIRI ,  Tomoaki ATSUMI

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/105 ,  H01L29/78 ,  H01L29/04 ,  H01L29/16 ,  H01L29/49 ,  H01L29/423 ,  H01L29/24 ,  H01L27/108 ,  H01L49/02 ,  H01L27/092 ,  H01L27/115

Abstract: Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common.

公开(公告)号：US20180109267A1

公开(公告)日：2018-04-19

申请号：US15832114

申请日：2017-12-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka SHIONOIRI ,  Kiyoshi KATO ,  Tomoaki ATSUMI

IPC: H03M1/00 ,  H03M1/12 ,  G11C27/02 ,  H03M1/46

CPC classification number: H03M1/002 ,  G11C27/02 ,  H03M1/1245 ,  H03M1/466

Abstract: An object is to reduce power consumption of an analog-digital converter circuit. An analog potential obtained in a sensor or the like is held in a sample-and-hold circuit including a transistor with an extremely low off-state current. In the sample-and-hold circuit, the analog potential is held in a node which is able to hold a charge by turning off the transistor. Then, power supply to a buffer circuit or the like included in the sample-and-hold circuit is stopped to reduce power consumption. In a structure where a potential is hold in each node, power consumption can be further reduced when a transistor with an extremely low off-state current is connected to a node holding a potential of a comparator, a successive approximation register, a digital-analog converter circuit, or the like, and power supply to these circuits is stopped.

公开(公告)号：US20170179132A1

公开(公告)日：2017-06-22

申请号：US15447672

申请日：2017-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori IEDA ,  Atsuo ISOBE ,  Yutaka SHIONOIRI ,  Tomoaki ATSUMI

IPC: H01L27/105 ,  H01L29/24 ,  H01L27/108 ,  H01L29/786 ,  H01L27/12 ,  H01L49/02

CPC classification number: H01L27/1207 ,  H01L27/092 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10805 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/40 ,  H01L29/04 ,  H01L29/16 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common.

公开(公告)号：US20150129873A1

公开(公告)日：2015-05-14

申请号：US14598384

申请日：2015-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masashi FUJITA ,  Yutaka SHIONOIRI ,  Hiroyuki TOMATSU ,  Hidetomo KOBAYASHI

IPC: H01L27/12 ,  H01L27/108 ,  H01L27/088

CPC classification number: H01L27/1225 ,  H01L21/84 ,  H01L27/088 ,  H01L27/108 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1222 ,  H01L27/1251

Abstract: A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.

Abstract translation: 提供在绝缘区域上方设置有在第一半导体区域和第二半导体区域上设置绝缘区域的衬底上的第一场效应晶体管; 设置在所述基板上的绝缘层; 第二场效应晶体管，其设置在所述绝缘层的一个平面上，并且包括氧化物半导体层; 并提供控制终端。 控制端子以与第二场效应晶体管的源极和漏极相同的步骤形成，并且用于控制第一场效应晶体管的阈值电压的电压被提供给控制端子。

公开(公告)号：US20150008758A1

公开(公告)日：2015-01-08

申请号：US14456058

申请日：2014-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka SHIONOIRI ,  Koichiro KAMATA ,  Misako SATO ,  Shuhei MAEDA

IPC: H02J17/00

CPC classification number: H02J50/12 ,  H02J7/025 ,  H02J17/00 ,  H02J50/20 ,  H02J50/40 ,  H02J50/80 ,  H02J50/90

Abstract: An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end, without causing increases in complexity and size of devices. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver by receiving a position and resonant frequency detection signal using a plurality of sub-carriers having different frequencies from the power receiver, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency.

Abstract translation: 本发明的目的是提供一种供电系统和馈电方法，其对于供电用户在电力接收端更方便，而不会增加设备的复杂性和尺寸。 本发明的目的是提供一种馈电系统和馈电方法，其还允许馈电供应商（在发电端发电）供电而不浪费电力。 向功率接收器无线供电的供电装置通过使用具有与电力接收器不同的频率的多个子载波接收位置和谐振频率检测信号来检测电力接收器的位置和谐振频率，并且控制 根据该信息将电力信号的频率发送到电力接收器。 通过以最佳频率向功率接收器发送功率信号以实现高功率传输效率，可以提供有效的馈电服务。

公开(公告)号：US20140375263A1

公开(公告)日：2014-12-25

申请号：US14481435

申请日：2014-09-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka SHIONOIRI ,  Koichiro KAMATA ,  Misako SATO ,  Shuhei MAEDA

IPC: H02J7/02 ,  H02J5/00

CPC classification number: H02J50/12 ,  H02J7/025 ,  H02J50/20 ,  H02J50/40 ,  H02J50/80 ,  H02J50/90 ,  H04B5/0037 ,  H04B5/0093

Abstract: An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency.

Abstract translation: 本发明的目的是提供一种供电系统和馈电方法，其对于电力接收端的馈电用户更为方便。 本发明的目的是提供一种馈电系统和馈电方法，其还允许馈电供应商（在发电端发电）供电而不浪费电力。 向功率接收器无线供电的供电装置检测供电电源的位置和谐振频率，并根据信息控制发送到电力接收器的电力信号的频率 。 通过以最佳频率向功率接收器发送功率信号以实现高功率传输效率，可以提供有效的馈电服务。

公开(公告)号：US20250150083A1

公开(公告)日：2025-05-08

申请号：US19018549

申请日：2025-01-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masashi FUJITA ,  Yutaka SHIONOIRI ,  Kiyoshi KATO ,  Hidetomo KOBAYASHI

IPC: H03K19/17728 ,  H03K19/173 ,  H03K19/17758 ,  H03K19/17772

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

公开(公告)号：US20170272079A1

公开(公告)日：2017-09-21

申请号：US15610705

申请日：2017-06-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi FUJITA ,  Yutaka SHIONOIRI ,  Kiyoshi KATO ,  Hidetomo KOBAYASHI

IPC: H03K19/177 ,  H03K19/173

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

公开(公告)号：US20170263774A1

公开(公告)日：2017-09-14

申请号：US15604934

申请日：2017-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke MATSUBAYASHI ,  Yoshiyuki KOBAYASHI ,  Shuhei NAGATSUKA ,  Yutaka SHIONOIRI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78648 ,  H01L29/78696

Abstract: A transistor having favorable electrical characteristics. A transistor suitable for miniaturization. A transistor having a high switching speed. One embodiment of the present invention is a semiconductor device that includes a transistor. The transistor includes an oxide semiconductor, a gate electrode, and a gate insulator. The oxide semiconductor includes a first region in which the oxide semiconductor and the gate electrode overlap with each other with the gate insulator positioned therebetween. The transistor has a threshold voltage higher than 0 V and a switching speed lower than 100 nanoseconds.