公开(公告)号：US09882085B2

公开(公告)日：2018-01-30

申请号：US15040969

申请日：2016-02-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Su Jin Shin ,  Ki Bum Nam ,  Yu Dae Han ,  A Ram Cha Lee

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/00 ,  H01L33/20 ,  H01L21/02 ,  H01L29/06 ,  H01L33/02

CPC classification number: H01L33/24 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0657 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

公开(公告)号：US20150069418A1

公开(公告)日：2015-03-12

申请号：US14386775

申请日：2013-03-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Su Jin Shin ,  Ki Bum Nam ,  Yu Dae Han ,  A Ram Cha Lee

IPC: H01L21/02 ,  H01L29/06 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/24 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0657 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。

公开(公告)号：US10199539B2

公开(公告)日：2019-02-05

申请号：US15881633

申请日：2018-01-26

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Ki Yon Park ,  Yu Dae Han

IPC: H01L33/02 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on then-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

公开(公告)号：US20170309780A1

公开(公告)日：2017-10-26

申请号：US15515991

申请日：2015-09-30

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Yu Dae Han

IPC: H01L33/14 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

公开(公告)号：US10043943B2

公开(公告)日：2018-08-07

申请号：US15563538

申请日：2016-03-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Jeong Hun Heo ,  Yu Dae Han ,  Gun Woo Han

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/22 ,  H01L33/00 ,  H01L33/38 ,  H01L33/32

Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.

公开(公告)号：US09263255B2

公开(公告)日：2016-02-16

申请号：US14386775

申请日：2013-03-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Su Jin Shin ,  Ki Bum Nam ,  Yu Dae Han ,  A Ram Cha Lee

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/20 ,  H01L29/06 ,  H01L33/22 ,  H01L33/02

CPC classification number: H01L33/24 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0657 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。

公开(公告)号：US20180151775A1

公开(公告)日：2018-05-31

申请号：US15881633

申请日：2018-01-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Yu Dae Han

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/02 ,  H01L33/06

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on then-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

公开(公告)号：US20180090641A1

公开(公告)日：2018-03-29

申请号：US15563538

申请日：2016-03-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Jeong Hun Heo ,  Yu Dae Han ,  Gun Woo Han

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38

Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.

公开(公告)号：US09905728B2

公开(公告)日：2018-02-27

申请号：US15515991

申请日：2015-09-30

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Yu Dae Han

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

公开(公告)号：US20160172539A1

公开(公告)日：2016-06-16

申请号：US15040969

申请日：2016-02-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jeong Hun Heo ,  Joo Won Choi ,  Choong Min Lee ,  Su Jin Shin ,  Ki Bum Nam ,  Yu Dae Han ,  A Ram Cha Lee

IPC: H01L33/24 ,  H01L33/02 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0657 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。