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    Nitride semiconductor device comprising bonded substrate and fabrication method of the same
    1.
    发明授权
    Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权
    包含键合衬底的氮化物半导体器件及其制造方法

    公开(公告)号：US07378334B2

    公开(公告)日：2008-05-27

    申请号：US11344197

    申请日：2006-02-01

    申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    IPC分类号： H01L21/20

    CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。 在p型氮化物半导体层8上形成包含多于一个金属层的第一结合层。 具有第一面和第二面的支撑衬底的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于用于生长氮化物半导体的衬底1的热膨胀系数。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

    Nitride semiconductor device comprising bonded substrate and fabrication method of the same
    2.
    发明授权
    Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权
    包含键合衬底的氮化物半导体器件及其制造方法

    公开(公告)号：US08030665B2

    公开(公告)日：2011-10-04

    申请号：US12113030

    申请日：2008-04-30

    申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    IPC分类号： H01L29/26

    CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

    Nitride semiconductor device comprising bonded substrate and fabrication method of the same
    3.
    发明授权
    Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权
    包含键合衬底的氮化物半导体器件及其制造方法

    公开(公告)号：US07105857B2

    公开(公告)日：2006-09-12

    申请号：US10614342

    申请日：2003-07-08

    申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    IPC分类号： H01L31/12

    CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

    Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same
    4.
    发明申请
    Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same 有权
    包含粘结基板的氮化物半导体器件及其制造方法

    公开(公告)号：US20080296609A1

    公开(公告)日：2008-12-04

    申请号：US12113030

    申请日：2008-04-30

    申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

    Transmission belt
    9.
    发明授权
    Transmission belt 有权
    传动皮带

    公开(公告)号：US09140329B2

    公开(公告)日：2015-09-22

    申请号：US14359565

    申请日：2012-02-01

    申请人： Mitsuhiro Yamada ,  Keiji Sakamoto ,  Shinji Uchigashima

    发明人： Mitsuhiro Yamada ,  Keiji Sakamoto ,  Shinji Uchigashima

    IPC分类号： C08F8/00 ,  C08F283/00 ,  C08F12/28 ,  F16G1/10 ,  F16G1/12 ,  F16G1/28

    CPC分类号： F16G1/10 ,  F16G1/12 ,  F16G1/28

    摘要： The durability of a belt is enhanced by improving the strength of rubber itself while enhancing its peeling strength with respect to a cord, a fabric or a short fiber. A toothed belt (10) comprises a belt body (13) that is integrally formed by a tooth rubber (11) provided on one surface side thereof, a backing rubber (12) provided on the other surface side, and an embedded cord (14) spirally wound in a boundary portion between the tooth rubber (11) and the backing rubber (12) that extends in the longitudinal direction of the belt. A facing fabric (20) covering the tooth rubber (11) is adhered to a surface of the tooth rubber (11), or one surface of the belt body (13). The tooth rubber (11) is obtained by vulcanization-molding a rubber composition including rubber such as HNBR, resorcinol, a melamine compound, silica and the like.

    摘要翻译： 通过提高橡胶本身的强度并提高其对帘线，织物或短纤维的剥离强度，可以提高带的耐久性。 齿形带（10）包括带状体（13），其由设置在其一个表面侧上的齿状橡胶（11），设置在另一个表面侧的背衬橡胶（12）和嵌入的帘线 ）螺旋缠绕在沿着带的纵向方向延伸的齿橡胶（11）和背衬橡胶（12）之间的边界部分中。 覆盖齿橡胶（11）的面料（20）粘附到齿橡胶（11）的表面或带体（13）的一个表面。 通过硫化成型包含橡胶如HNBR，间苯二酚，三聚氰胺化合物，二氧化硅等的橡胶组合物来获得齿橡胶（11）。