摘要:
A light-plasmon coupling lens including an optically transparent substrate having a light incident surface and a light-plasmon coupling surface opposite the light incident surface. The light-plasmon coupling surface including at least a set of circular concentric peaks/valleys which form a Fourier sinusoidal pattern in the radial direction of the circular concentric peaks/valleys. A conformal layer of metal is deposited on the light-plasmon coupling surface of the substrate and has aperture at the center of thereof through which plasmons are transmitted. An optical recording medium including a light-plasmon coupling lens.
摘要:
An optical data storage and retrieval system that includes a phase change storage medium and dual energy sources. The phase change material may store information by undergoing a transformation from one structural state to another structural state through application of energy. The system is equipped with two energy sources, neither of which alone provides sufficient energy to effect the transformation. The combination of both energy sources, however, provides sufficient energy to induce the transformation needed to record information. The energy from either source may be optical, thermal, electromagnetic, mechanical or magnetic energy.
摘要:
A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
摘要:
A method of operating a multi-terminal electronic device. The device includes an active material in electrical communication with three or more electrical terminals. The active material is able to undergo a transformation from one state to another state, where the two states differ in resistance. The method includes the step of providing energy between one pair of terminals of the device, where the provided energy effects a change in the state of the active material adjacent to one or more other terminals of the device. In one embodiment, energy is applied between a first terminal and a second terminal of a three-terminal device and the state of the active material adjacent to the third terminal is altered. In one embodiment, energy is applied in the form of electrical energy and the active material is a phase change material that undergoes a transformation from one structural state to another structural state. The two structural states may include different volume fractions of a crystalline phase and an amorphous phase.
摘要:
The present invention discloses a fire resistant laminate and incorporating the laminate into an encapsulant for a photovoltaic module that may be used in a photovoltaic building material. More particularly, the present invention relates to fire resistant encapsulant that may be used in a triple junction amorphous silicon photovoltaic module that is fire resistant on a wide variety of buildings roofs, including residential housing, and that is flexible and lightweight. A fire resistant additive, such as solid glass spheres, may be added to encapsulant material to produce a fire resistant, cut resistant, lightweight photovoltaic device.
摘要:
Multi-terminal chalcogenide memory cells having multiple binary or non-binary bit storage capacity and methods of programming same. The memory cells include a pore region containing a chalcogenide material along with three or more electrical terminals in electrical communication therewith. The configuration of terminals delineates spatially distinct regions of chalcogenide material that may be selectively and independently programmed to provide multibit storage. The application of an electrical signal (e.g. electrical current or voltage pulse) between a pair of terminals effects a structural transformation in one of the spatially distinct portions of chalcogenide material. Application of electrical signals to different pairs of terminals within a chalcogenide device effects structural transformations in different portions of the chalcogenide material. The structural states produced by the structural transformations may be used for storage of information values in a binary or non-binary (e.g. multilevel) system. The selection of terminals provides for the selective programming of specific and distinct portions within a continuous volume of chalcogenide material, where each selectively programmed portion provides for the storage of a single binary or non-binary bit. In devices having three or more terminals, two or more selectively programmable portions are present within the volume of chalcogenide material occupying the pore region and multibit storage is accordingly realized. The instant invention further includes methods of programming chalcogenide memory cells having three or more terminals directed at the storage of multiple bits of information in binary or non-binary systems.
摘要:
A steering assist mechanism for use in a vehicle having a steering linkage and an engine. The steering assist mechanism includes a driving unit having input and output ends. The output end being connected to the steering linkage. The steering assist mechanism also includes power take-off means adapted to connect the engine to the input end of the driving unit. The steering assist mechanism further includes an electromagnetic clutch in the driving unit between the input and output ends, and control means which are responsive to the torque exerted through the steering linkage to increase the energization of the clutch, whereby the steering linkage is driven by the power take-off means in a direction tending to reduce the torque.
摘要:
Mechanically and thermally improved rechargeable batteries, modules and fluid-cooled battery pack systems. The battery is prismatic in shape with an optimized thickness to width to height aspect ratio which provides the battery with balanced optimal properties when compared with prismatic batteries lacking this optimized aspect ratio. The optimized thickness, width and height allow for maximum capacity and power output, while eliminating deleterious side affects. The battery case design allows for unidirectional expansion which is readily compensated for by applying external mechanical compression counter to that direction. In the module, the batteries are bound within a module bundling/compression means under external mechanical compression which is optimized to balance outward pressure due to expansion and provide additional inward compression to reduce the distance between the positive and negative electrodes, thereby increasing overall battery power. The fluid-cooled battery pack includes; 1) a battery-pack case having coolant inlet and outlet; 2) battery modules within the case such that the battery module is spaced from the case walls and from other battery modules to form coolant flow channels along at least one surface of the bundled batteries; and 3) at least one coolant transport means. The width of the coolant flow channels allows for maximum heat transfer. Finally the batteries, modules and packs can also include means for providing variable thermal insulation to at least that portion of the rechargeable battery system which is most directly exposed to said ambient thermal condition, so as to maintain the temperature of the rechargeable battery system within the desired operating range thereof under variable ambient conditions.
摘要:
A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.