公开(公告)号：US20070120129A1

公开(公告)日：2007-05-31

申请号：US11353647

申请日：2006-02-13

申请人： Steven DenBaars ,  Eric Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault ,  Adam Saxler

发明人： Steven DenBaars ,  Eric Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault ,  Adam Saxler

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L25/0756 ,  H01L27/15 ,  H01L33/025 ,  H01L33/30 ,  H01L33/343 ,  H01L33/465 ,  H01L33/502 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01S5/405 ,  H01S5/4087 ,  H01L2924/00

摘要： A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.

摘要翻译： 一种固态发光器件，包括具有半导体材料的有源区的发射极结构和在该有源区的相对侧上的一对相对掺杂的半导体材料层。 响应于穿过掺杂层的电偏压，有源区域以预定波长发光。 包括与所述发射极结构成一体并掺杂有至少一种稀土或过渡元素的半导体材料的吸收层。 吸收层吸收从有源区域发射的至少一些光并且再发射至少一个不同波长的光。 发射体结构和衬底上设置的吸收层包括衬底。

公开(公告)号：US20060255347A1

公开(公告)日：2006-11-16

申请号：US11484233

申请日：2006-07-10

申请人： Steven DenBaars ,  Eric Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

发明人： Steven DenBaars ,  Eric Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/30 ,  H01L25/0756 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/343 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H01S3/0627 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1628 ,  H01S5/0206 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/32341 ,  H01L2924/00

摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.

公开(公告)号：US06821804B2

公开(公告)日：2004-11-23

申请号：US10665595

申请日：2003-09-17

申请人： Brian Thibeault ,  Michael Mack ,  Steven DenBaars

发明人： Brian Thibeault ,  Michael Mack ,  Steven DenBaars

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/44 ,  H01L2933/0091 ,  Y10S977/712 ,  Y10S977/834

摘要： This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. The structures can be arrays of light extraction elements or disperser layers. The light extraction elements can have many different shapes and are placed in many locations to increase the efficiency of the LED over conventional LEDs. The disperser layers provide scattering centers for light and can be placed in many locations as well. The new LEDs with arrays of light extraction elements are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs. The new LEDs with disperser layers are manufactured using new methods and are also highly manufacturable.

摘要翻译： 本发明描述了在LED上或LED内部具有光提取结构以提高其效率的新型LED。 新的光提取结构提供用于将光反射，折射或散射到更有利于光逃逸到包装中的方向的表面。 该结构可以是光提取元件或分散层的阵列。 光提取元件可以具有许多不同的形状并且被放置在许多位置以提高LED相对于常规LED的效率。 分散层提供光的散射中心，并且也可以放置在许多位置。 具有光提取元件阵列的新型LED采用标准处理技术制造，使得它们以与标准LED相似的成本高度可制造。 具有分散层的新型LED使用新的方法制造，并且也是高度可制造的。

公开(公告)号：US06657236B1

公开(公告)日：2003-12-02

申请号：US09727803

申请日：2000-11-28

申请人： Brian Thibeault ,  Michael Mack ,  Steven DenBaars

发明人： Brian Thibeault ,  Michael Mack ,  Steven DenBaars

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/44 ,  H01L2933/0091 ,  Y10S977/712 ,  Y10S977/834

摘要： This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. The structures can be arrays of light extraction elements or disperser layers. The light extraction elements can have many different shapes and are placed in many locations to increase the efficiency of the LED over conventional LEDs. The disperser layers provide scattering centers for light and can be placed in many locations as well. The new LEDs with arrays of light extraction elements are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs. The new LEDs with disperser layers are manufactured using new methods and are also highly manufacturable.

摘要翻译： 本发明描述了在LED上或LED内部具有光提取结构以提高其效率的新型LED。 新的光提取结构提供用于将光反射，折射或散射到更有利于光逃逸到包装中的方向的表面。 该结构可以是光提取元件或分散层的阵列。 光提取元件可以具有许多不同的形状并且被放置在许多位置以提高LED相对于常规LED的效率。 分散层提供光的散射中心，并且也可以放置在许多位置。 具有光提取元件阵列的新型LED采用标准处理技术制造，使得它们以与标准LED相似的成本高度可制造。 具有分散层的新型LED使用新的方法制造，并且也是高度可制造的。

公开(公告)号：US06410942B1

公开(公告)日：2002-06-25

申请号：US09713576

申请日：2000-11-14

申请人： Brian Thibeault ,  Steven DenBaars

发明人： Brian Thibeault ,  Steven DenBaars

IPC分类号： H01L3300

CPC分类号： H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42

摘要： This invention describes new LED structures that provide increased light extraction efficiency. The new LED structures include arrays of electrically interconnected micro-LEDs that have and active layer sandwiched between two oppositely doped layer. The micro-LEDs are formed on a first spreader layer with the bottom layer of the micro-LEDs in contact with the first spreader. A second spreader layer is formed over the micro-LEDs and in contact with their top layer. The first spreader layer is electrically isolated from the second spreader layer. Each of the spreader layers has a contact and when a bias is applied across the contacts, current spreads to the micro-LEDs and they emit light. The efficiency of the new LED is increased by the increased emission surface of the micro-LEDs. Light from each of the micro-LEDs active layer will reach a surface after travelling only a short distance, reducing total internal reflection of the light. Light extraction elements (LEEs) between the micro-LEDs can be included to further enhance light extraction. The new LEDs are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs.

摘要翻译： 本发明描述了提供增加的光提取效率的新的LED结构。 新的LED结构包括电互连微型LED的阵列，其具有夹在两个相对掺杂层之间的有源层。 微型LED形成在第一扩散器层上，其中微型LED的底层与第一扩散器接触。 第二扩散层形成在微型LED上并与其顶层接触。 第一撒布层与第二撒布层电隔离。 每个扩展器层具有接触，并且当跨接触点施加偏压时，电流扩散到微型LED并且它们发光。 通过增加微型LED的发射面，增加新型LED的效率。 每个微型LED有源层的光线将在行进只有很短的距离后到达一个表面，从而减少光的全内反射。 可以包括微型LED之间的光提取元件（LEE），以进一步增强光提取。 新的LED采用标准处理技术制造，使其高度可制造成本与标准LED相似。

公开(公告)号：US20070252164A1

公开(公告)日：2007-11-01

申请号：US11676999

申请日：2007-02-20

申请人： Hong Zhong ,  John Kaeding ,  Rajat Sharma ,  James Speck ,  Steven DenBaars ,  Shuji Nakamura

发明人： Hong Zhong ,  John Kaeding ,  Rajat Sharma ,  James Speck ,  Steven DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L29/06

CPC分类号： H01L31/0236 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02647 ,  H01L21/02658 ,  H01L29/2003 ,  H01L29/778 ,  H01L31/18 ,  H01L33/0075 ,  Y02E10/50

摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.

摘要翻译： 一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。 本发明还公开了一种制造分面表面的方法。 一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。 另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。 分面表面通常是半极性平面。

公开(公告)号：US20070126023A1

公开(公告)日：2007-06-07

申请号：US11670332

申请日：2007-02-01

申请人： Benjamin Haskell ,  Michael Craven ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Benjamin Haskell ,  Michael Craven ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

摘要翻译： 非极性氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

公开(公告)号：US20060269390A1

公开(公告)日：2006-11-30

申请号：US11483387

申请日：2006-07-06

申请人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

发明人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

IPC分类号： B65G49/07

CPC分类号： H01L21/67103 ,  H01L21/68771

摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

公开(公告)号：US20060008941A1

公开(公告)日：2006-01-12

申请号：US10537385

申请日：2003-07-15

申请人： Benjamin Haskell ,  Paul Fini ,  Shigemasa Matsuda ,  Michael Craven ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Benjamin Haskell ,  Paul Fini ,  Shigemasa Matsuda ,  Michael Craven ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262

摘要： Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques

摘要翻译： 通过氢化物气相外延（HVPE）生长高平面非极性a面GaN膜。 所得到的膜适合于通过各种生长技术的后续装置再生长

公开(公告)号：US20050245095A1

公开(公告)日：2005-11-03

申请号：US11140893

申请日：2005-05-31

申请人： Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/31 ,  H01L21/469

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

摘要： A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

摘要翻译： 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。