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    CIRCUIT BOARD
    2.
    发明公开
    CIRCUIT BOARD 审中-公开

    公开(公告)号：US20240057258A1

    公开(公告)日：2024-02-15

    申请号：US18259163

    申请日：2022-01-12

    Applicant: TDK Corporation

    Inventor： Hitoshi SAITA

    IPC: H05K1/18 ,  H05K1/03 ,  H05K1/02

    CPC classification number: H05K1/181 ,  H05K1/0306 ,  H05K1/0204 ,  H05K2201/10015

    Abstract: An object of the present disclosure is to provide a circuit board capable of achieving improved heat dissipation characteristics. The circuit board includes a substrate having a ceramic board as a base material; and a thin film capacitor mounted on the substrate such that a mounting surface faces the conductor layer. The thin film capacitor includes the dielectric layer, first and second capacitor electrodes, formed on one and the other surfaces of the dielectric layer. The capacitor electrode is connected to the wiring pattern included in the conductor layer. The capacitor electrode or a terminal electrode connected thereto is exposed to the upper surface of the thin film capacitor that faces away from the mounting surface.

    THIN FILM CAPACITOR
    4.
    发明申请
    THIN FILM CAPACITOR 有权
    薄膜电容器

    公开(公告)号：US20160217931A1

    公开(公告)日：2016-07-28

    申请号：US15006366

    申请日：2016-01-26

    Applicant: TDK CORPORATION

    Inventor： Hitoshi SAITA ,  Hiroyasu INOUE ,  Yoshihiko YANO

    IPC: H01G4/33 ,  H01G4/10 ,  H01G4/12 ,  H01G4/012

    CPC classification number: H01G4/33 ,  H01G4/1227 ,  H01G4/1236

    Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.

    Abstract translation: 薄膜电容器包括基材，设置在基材上的电介质层和设置在电介质层上的上电极层。 电介质层包括相对于上电极层的表面沿法线方向延伸的多个柱状晶体，柱状晶体具有由AyBO 3表示的钙钛矿晶体结构，元素A为Ba，Ca， Sr和Pb，元素B为Ti，Zr，Sn和Hf中的至少一种，y≤0.995，并且每100摩尔AyBO 3的电介质层含有0.05〜2.5摩尔的Al。

    THIN FILM CAPACITOR
    5.
    发明申请
    THIN FILM CAPACITOR 有权

    公开(公告)号：US20220172894A1

    公开(公告)日：2022-06-02

    申请号：US17536319

    申请日：2021-11-29

    Applicant: TDK Corporation

    Inventor： Suguru ANDOH ,  Hiroshi TAKASAKI ,  Hitoshi SAITA

    IPC: H01G4/015 ,  H01G4/33

    Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

    DIELECTRIC THIN FILM, DIELECTRIC ELEMENT AND ELECTRONIC CIRCUIT BOARD
    6.
    发明申请
    DIELECTRIC THIN FILM, DIELECTRIC ELEMENT AND ELECTRONIC CIRCUIT BOARD 有权

    公开(公告)号：US20210292244A1

    公开(公告)日：2021-09-23

    申请号：US17189859

    申请日：2021-03-02

    Applicant: TDK CORPORATION

    Inventor： Toshio ASAHI ,  Masamitsu HAEMORI ,  Hitoshi SAITA ,  Masahito FURUKAWA

    IPC: C04B35/58 ,  H01G4/12 ,  H01G4/008

    Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

    THIN FILM CAPACITOR, POWER SOURCE MODULE, AND ELECTRONIC DEVICE
    10.
    发明申请
    THIN FILM CAPACITOR, POWER SOURCE MODULE, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20230094616A1

    公开(公告)日：2023-03-30

    申请号：US17954659

    申请日：2022-09-28

    Applicant: TDK CORPORATION

    Inventor： Tadashi IINO ,  Hiroyasu INOUE ,  Hitoshi SAITA

    IPC: H01G4/33 ,  H01G4/20

    Abstract: A thin film capacitor having a multilayer structure including a first electrode, a first dielectric layer, a second dielectric layer, and a second electrode in this order. The second dielectric layer and the second electrode are in contact. The first dielectric layer includes a perovskite type compound. The second dielectric layer includes a perovskite type compound or an oxide of M. When X1 and X2a represents an absolute value of an average energy for formation of an oxide of a cationic element included in a B site of the perovskite type compound included in the first dielectric layer and the second dielectric layer respectively, and X2b represents an absolute value of an average energy for formation of an oxide of M included in the second dielectric layer, then X2a

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