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    GAS CLUSTER ION BEAM ETCHING PROCESS
    1.
    发明申请
    GAS CLUSTER ION BEAM ETCHING PROCESS 审中-公开
    气体离子束蚀刻过程

    公开(公告)号：US20150270135A1

    公开(公告)日：2015-09-24

    申请号：US14731020

    申请日：2015-06-04

    Applicant: TEL Epion Inc.

    Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Luis Fernandez

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  C23F4/00 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

    Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials are described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB is formed from a pressurized gas mixture containing at least one etch compound and at least one additional gas, wherein the concentration of the at least one etch compound in the GCIB exceeds 5 at % of the pressurized gas mixture.

    Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB由含有至少一种蚀刻化合物和至少一种另外的气体的加压气体混合物形成，其中GCIB中的至少一种蚀刻化合物的浓度超过加压气体混合物的5at％。

    GAS CLUSTER ION BEAM PROCESS FOR OPENING CONFORMAL LAYER IN A HIGH ASPECT RATIO CONTACT VIA
    2.
    发明申请
    GAS CLUSTER ION BEAM PROCESS FOR OPENING CONFORMAL LAYER IN A HIGH ASPECT RATIO CONTACT VIA 有权
    用于在高平面比例接触中打开一致性层的气体离子束过程

    公开(公告)号：US20130330845A1

    公开(公告)日：2013-12-12

    申请号：US13841388

    申请日：2013-03-15

    Applicant: TEL EPION INC.

    Inventor： Christopher K. Olsen ,  Luis Fernandez

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76831 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.

    Abstract translation: 描述了用于对基板的高纵横比特征的底部的层进行图案化的方法。 该方法包括提供具有覆盖第二层的特征图案的第一层的衬底。 特征图案的特征在于初始临界尺寸（CD），初始角形轮廓以及纵横比为5：1或更大。 该方法还包括蚀刻穿过特征图案底部的第二层的至少一部分，以将特征图案至少部分地延伸到第二层中，同时将最终的CD保持在初始CD的阈值内，并且最后的角廓线 在使用气体簇离子束（GCIB）蚀刻工艺的初始拐角分布的阈值内。

    GCIB etching method for adjusting fin height of finFET devices
    6.
    发明授权
    GCIB etching method for adjusting fin height of finFET devices 有权
    用于调整finFET器件翅片高度的GCIB蚀刻方法

    公开(公告)号：US09209033B2

    公开(公告)日：2015-12-08

    申请号：US14306305

    申请日：2014-06-17

    Applicant: TEL EPION Inc.

    Inventor： Luis Fernandez ,  Edmund Burke

    IPC: H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213

    CPC classification number: H01L21/3065 ,  H01L21/31056 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/66795

    Abstract: A gas cluster ion beam (GCIB) etching method for adjusting a fin height in finFET devices is described. The method includes providing a substrate having a fin structure and a gap-fill material layer completely overlying the fin structure and filling the regions between each fin of the fin structure, wherein each fin includes a cap layer formed on a top surface thereof, and planarizing the gap-fill material layer until the cap layer is exposed on at least one fin of the fin structure. Additionally, the method includes setting a target fin height for the fin structure, wherein the fin height measured from an interface between the cap layer and the fin structure, and exposing the substrate to a GCIB and recessing the gap-fill material layer relative to the cap layer until the target fin height is substantially achieved.

    Abstract translation: 描述了用于调整finFET器件中鳍片高度的气体簇离子束（GCIB）蚀刻方法。 该方法包括提供具有翅片结构的衬底和完全覆盖翅片结构的间隙填充材料层，并填充翅片结构的每个翅片之间的区域，其中每个翅片包括形成在其顶表面上的盖层，并且平坦化 间隙填充材料层直到帽层暴露在鳍结构的至少一个翅片上。 此外，该方法包括设置翅片结构的目标翅片高度，其中从盖层和翅片结构之间的界面测量的翅片高度，以及将基底暴露于GCIB并使间隙填充材料层相对于 盖层直到目标翅片高度基本上达到。

    Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
    8.
    发明授权
    Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via 有权
    气体簇离子束工艺，用于在高纵横比接触通孔中打开共形层

    公开(公告)号：US08722542B2

    公开(公告)日：2014-05-13

    申请号：US13841388

    申请日：2013-03-15

    Applicant: TEL Epion Inc.

    Inventor： Christopher K. Olsen ,  Luis Fernandez

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76831 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.

    Abstract translation: 描述了用于对基板的高纵横比特征的底部的层进行图案化的方法。 该方法包括提供具有覆盖第二层的特征图案的第一层的衬底。 特征图案的特征在于初始临界尺寸（CD），初始角形轮廓以及纵横比为5：1或更大。 该方法还包括蚀刻穿过特征图案底部的第二层的至少一部分，以将特征图案至少部分地延伸到第二层中，同时将最终的CD保持在初始CD的阈值内，并且最后的角廓线 在使用气体簇离子束（GCIB）蚀刻工艺的初始拐角分布的阈值内。

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