公开(公告)号：US20130330845A1

公开(公告)日：2013-12-12

申请号：US13841388

申请日：2013-03-15

Applicant: TEL EPION INC.

Inventor： Christopher K. Olsen ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76831 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.

Abstract translation: 描述了用于对基板的高纵横比特征的底部的层进行图案化的方法。 该方法包括提供具有覆盖第二层的特征图案的第一层的衬底。 特征图案的特征在于初始临界尺寸（CD），初始角形轮廓以及纵横比为5：1或更大。 该方法还包括蚀刻穿过特征图案底部的第二层的至少一部分，以将特征图案至少部分地延伸到第二层中，同时将最终的CD保持在初始CD的阈值内，并且最后的角廓线 在使用气体簇离子束（GCIB）蚀刻工艺的初始拐角分布的阈值内。

公开(公告)号：US20130309872A1

公开(公告)日：2013-11-21

申请号：US13950862

申请日：2013-07-25

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon

IPC: H01L21/306

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。

公开(公告)号：US20150332924A1

公开(公告)日：2015-11-19

申请号：US14696063

申请日：2015-04-24

Applicant: TEL Epion Inc.

Inventor： Kenneth Regan ,  Yan Shao ,  Robert K. Becker ,  Christopher K. Olsen

IPC: H01L21/265 ,  H01L21/02 ,  H01L21/285 ,  H01L21/263

CPC classification number: C23C14/221 ,  C23C14/10 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/2633 ,  H01L21/26566 ,  H01L21/28556

Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle φ, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract translation: 提供了一种控制用于处理衬底上的结构的气体簇离子束（GCIB）系统的方法。 GCIB系统包括用于将GCIB引向衬底的偏转板，GCIB系统耦合到被配置成在三维中移动衬底的衬底扫描装置。 当衬底被衬底扫描装置移动时，衬底暴露于GCIB。 控制器用于控制一组偏转操作参数，包括偏转角＆phgr;偏转板的电压差，偏转板功率的频率，射束电流，衬底距离，喷嘴中的压力，过程中的气体流速 腔室，束灼伤的分离，豆烧的持续时间和/或束导流器输出的占空比。

公开(公告)号：US20130196509A1

公开(公告)日：2013-08-01

申请号：US13826600

申请日：2013-03-14

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

公开(公告)号：US20150270135A1

公开(公告)日：2015-09-24

申请号：US14731020

申请日：2015-06-04

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23F4/00 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials are described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB is formed from a pressurized gas mixture containing at least one etch compound and at least one additional gas, wherein the concentration of the at least one etch compound in the GCIB exceeds 5 at % of the pressurized gas mixture.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB由含有至少一种蚀刻化合物和至少一种另外的气体的加压气体混合物形成，其中GCIB中的至少一种蚀刻化合物的浓度超过加压气体混合物的5at％。

公开(公告)号：US09540725B2

公开(公告)日：2017-01-10

申请号：US14696063

申请日：2015-04-24

Applicant: TEL Epion Inc.

Inventor： Kenneth Regan ,  Yan Shao ,  Robert K. Becker ,  Christopher K. Olsen

IPC: H01L21/425 ,  C23C14/22 ,  H01L21/265 ,  H01L21/263 ,  H01L21/02 ,  H01L21/285 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  C23C14/10

CPC classification number: C23C14/221 ,  C23C14/10 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/2633 ,  H01L21/26566 ,  H01L21/28556

Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle φ, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Abstract translation: 提供了一种控制用于处理衬底上的结构的气体簇离子束（GCIB）系统的方法。 GCIB系统包括用于将GCIB引向衬底的偏转板，GCIB系统耦合到被配置成在三维中移动衬底的衬底扫描装置。 当衬底被衬底扫描装置移动时，衬底暴露于GCIB。 控制器用于控制一组偏转操作参数，包括偏转角φ，偏转板的电压差，偏转板功率的频率，光束电流，衬底距离，喷嘴中的压力，处理室中的气体流速 ，光束灼伤分离，豆烧的持续时间和/或光束偏转器输出的占空比。

公开(公告)号：US09324567B2

公开(公告)日：2016-04-26

申请号：US13826600

申请日：2013-03-14

Applicant: TEL Epion Inc.

Inventor： Martin D. Tabat ,  Christopher K. Olsen ,  Yan Shao ,  Ruairidh MacCrimmon ,  Luis Fernandez

IPC: H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  C23F4/00 ,  H01L21/3065

CPC classification number: H01L21/306 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Abstract translation: 描述了用于执行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。 此外，GCIB蚀刻处理利用含Si和/或Ge的蚀刻剂。 此外，GCIB蚀刻处理有助于蚀刻含Si材料，含Ge材料和含金属材料。

公开(公告)号：US08722542B2

公开(公告)日：2014-05-13

申请号：US13841388

申请日：2013-03-15

Applicant: TEL Epion Inc.

Inventor： Christopher K. Olsen ,  Luis Fernandez

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76831 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.

Abstract translation: 描述了用于对基板的高纵横比特征的底部的层进行图案化的方法。 该方法包括提供具有覆盖第二层的特征图案的第一层的衬底。 特征图案的特征在于初始临界尺寸（CD），初始角形轮廓以及纵横比为5：1或更大。 该方法还包括蚀刻穿过特征图案底部的第二层的至少一部分，以将特征图案至少部分地延伸到第二层中，同时将最终的CD保持在初始CD的阈值内，并且最后的角廓线 在使用气体簇离子束（GCIB）蚀刻工艺的初始拐角分布的阈值内。