公开(公告)号：US3355291A

公开(公告)日：1967-11-28

申请号：US31474363

申请日：1963-10-08

Applicant: TEXAS INSTRUMENTS INC

Inventor： BAIRD STEPHEN S ,  CUNNINGHAM JAMES A

IPC: C03C4/02 ,  C03C14/00 ,  C25D5/06 ,  H01L21/033 ,  H01L21/312 ,  H01L21/316 ,  H01L23/31

CPC classification number: C03C14/006 ,  C03C4/02 ,  C25D5/06 ,  H01L21/033 ,  H01L21/312 ,  H01L21/316 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A glass coating is applied to a semi-conductor body by applying a slurry of glass and a photo resist to the surface, exposing and developing to remove the slurry from selected areas and heating to remove the remaining resist and fuse the glass to desired areas of the body. The glass may consist of lead borosilicate glass and the resist of Kmer. The mixture is prepared by grinding the glass with hard alumina balls in polyethylene bottles containing methyl alcohol, filtering off the methyl alcohol, and adding the ground glass to xylene to leach out traces of polyethylene. The xylene is filtered off, and since drying is undesirable a sample is used to determine the proportion of xylene remaining so that the bulk may be brought to a standard xylene level. The resulting paste is mixed in a ball mill with the Kmer photo resist and xylene and applied to the semi-conductor surface by spinning. The mixture is then baked, exposed to the desired light pattern, and material from the unexposed regions removed by development. The coated semi-conductor body is dried and the glass fired in oxygen at 500 DEG C. A layer of silicon oxide may cover the semi-conductor body before the glass is applied. The figure shows a planar diode with the semi-conductor 1 covered by an oxide coating 3 and glass coating 4 applied to leave an opening for contact 5 to the semi-conductor.

Abstract translation: 将玻璃涂层施加到半导体主体上，通过将玻璃和光致抗蚀剂的浆料施加到表面，暴露和显影以从选定区域中除去浆料并加热以除去剩余的 抵抗并将玻璃熔合到身体的所需区域。 玻璃可以由硼硅酸铅玻璃和Kmer的抗蚀剂组成。 该混合物通过用含有甲醇的聚乙烯瓶中的硬质氧化铝​​球研磨玻璃制成，过滤掉甲醇，并将磨碎的玻璃加入到二甲苯中以浸出痕量的聚乙烯。 滤除二甲苯，并且由于干燥是不合需要的，因此使用样品来确定剩余的二甲苯的比例，以使体积达到标准二甲苯水平。 将得到的糊状物在球磨机中与Kmer光致抗蚀剂和二甲苯混合，并通过旋转施加到半导体表面。 然后将混合物烘烤，暴露于所需的光图案，并且通过显影除去未曝光区域的材料。 将涂覆的半导体体干燥，并在500℃下在氧气中烧制玻璃。在施加玻璃之前，一层氧化硅可覆盖半导体体。 该图示出了平面二极管，半导体1被氧化物涂层3覆盖，玻璃涂层4被施加以留下用于接触5的开口到半导体。

公开(公告)号：US3488834A

公开(公告)日：1970-01-13

申请号：US3488834D

申请日：1965-10-20

Applicant: TEXAS INSTRUMENTS INC

Inventor： BAIRD STEPHEN S

IPC: H01L21/00 ,  H01L27/12 ,  B01J17/00 ,  H01L1/16

CPC classification number: H01L21/00 ,  H01L27/12 ,  Y10S148/085 ,  Y10S148/15 ,  Y10S438/928 ,  Y10S438/977

公开(公告)号：US3290180A

公开(公告)日：1966-12-06

申请号：US44576765

申请日：1965-04-05

Applicant: TEXAS INSTRUMENTS INC

Inventor： BAIRD STEPHEN S ,  FULLER CLYDE R

IPC: H01L21/306 ,  H01L21/316 ,  H01L23/29

CPC classification number: H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/31662 ,  H01L23/293 ,  H01L2924/0002 ,  Y10S148/003 ,  Y10S148/017 ,  Y10S148/118 ,  Y10S438/906 ,  H01L2924/00