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公开(公告)号：US09796585B2
公开(公告)日：2017-10-24
申请号：US15007698
申请日：2016-01-27
Applicant: Texas Instruments Incorporated
Inventor： John Charles Ehmke
CPC classification number: B81C99/004 , B81C1/00904
Abstract: A method of leak detection of hermetically sealed cavities semiconductor devices is provided. Scribe streets are formed with access from each packaged device on a first substrate to the edge of the first substrate. The first substrate is attached to a second substrate, forming gaps between the two substrates. A cavity is formed around a packaged device on the first substrate by attaching a bond ring to the first substrate and an optically transparent window above the bonding ring. The cavity is evacuated. A high powered laser beam strikes the top surface of the device on the first substrate within the cavity and creates a vertical surface displacement of the first substrate. The vertical surface displacement is monitored using a separate interrogation laser beam. Leakage of the cavity can be measured by characterizing the resonance decay rate, Q.
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公开(公告)号：US09567213B1
公开(公告)日：2017-02-14
申请号：US14827683
申请日：2015-08-17
Applicant: Texas Instruments Incorporated
Inventor： John Charles Ehmke , Virgil Cotoco Ararao
IPC: H01L21/00 , H01L21/44 , H01L21/31 , G02B6/12 , G02B5/124 , G09G3/34 , H01J5/00 , H01L23/02 , B81C1/00 , B81B7/00 , G02B26/08 , G02B6/42 , G02B26/00 , B82Y30/00
CPC classification number: B81B7/0038 , B81B2203/0315 , B81C1/00269 , B81C1/00285 , B81C1/00293 , B81C2201/0108 , B81C2201/013 , B81C2201/0188 , B81C2201/0198 , B81C2201/053 , B81C2203/0109 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , B82Y30/00 , G02B6/4204 , G02B6/4208 , G02B6/4248 , G02B26/001 , G02B26/0833 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/03612 , H01L2224/03614 , H01L2224/039 , H01L2224/04026 , H01L2224/05083 , H01L2224/05109 , H01L2224/05123 , H01L2224/05138 , H01L2224/05163 , H01L2224/05166 , H01L2224/0517 , H01L2224/05562 , H01L2224/27462 , H01L2224/2747 , H01L2224/279 , H01L2224/29006 , H01L2224/29011 , H01L2224/29023 , H01L2224/29109 , H01L2224/29144 , H01L2224/32058 , H01L2224/32227 , H01L2224/83121 , H01L2224/83193 , H01L2224/8381 , H01L2224/83825 , H01L2224/94 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01074 , H01L2924/1461 , H01L2924/164 , H01L2924/00014 , H01L2924/01049 , H01L2224/03 , H01L2924/01042 , H01L2924/01072 , H01L2924/01004 , H01L2224/83 , H01L2224/0345 , H01L2224/0361 , H01L2224/03462
Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.
Abstract translation: 一种密封包装，其包括具有具有第一高度（101a）的MEMS结构（101）的表面的基底（110），所述基底被气密地密封到在所述MEMS结构上形成空腔的帽（120） 所述盖通过粘附到所述基板表面和所述盖的金属层的垂直堆叠（130）附接到所述基板表面，所述堆叠具有围绕所述MEMS结构的连续轮廓，同时与所述MEMS结构隔开距离（140）; 所述堆叠具有附着到所述基板的底部第一金属种子膜（131a）和粘附到所述底部第一种子膜的底部第二金属种子膜（131b），具有第一宽度（131c）和公共侧壁（138）的两种种子膜 ）; 另外，粘附到盖的顶部第一金属种子膜（132a）和粘附到顶部第一种子膜的顶部第二金属种子膜（132b），具有小于第一宽度的第二宽度（132c）的两种种子膜和共同的 侧壁（139）; 连接到包括金 - 铟金属间化合物的金属层（135）的底部和顶部金属种子膜，具有大于第一高度的第二高度（133a）的层（135）并且包围种子膜和共同侧壁。
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公开(公告)号：US11084717B2
公开(公告)日：2021-08-10
申请号：US16551108
申请日：2019-08-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Virgil Cotoco Ararao , John Charles Ehmke
Abstract: In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.
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公开(公告)号：US09890036B2
公开(公告)日：2018-02-13
申请号：US15429636
申请日：2017-02-10
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： John Charles Ehmke , Virgil Cotoco Ararao
IPC: H01L21/00 , H01L21/31 , H01L21/469 , B81B7/00 , B81C1/00 , G02B26/08 , G02B6/42 , G02B26/00 , B82Y30/00
CPC classification number: B81B7/0038 , B81B2203/0315 , B81C1/00269 , B81C1/00285 , B81C1/00293 , B81C2201/0108 , B81C2201/013 , B81C2201/0188 , B81C2201/0198 , B81C2201/053 , B81C2203/0109 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , B82Y30/00 , G02B6/4204 , G02B6/4208 , G02B6/4248 , G02B26/001 , G02B26/0833 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/03612 , H01L2224/03614 , H01L2224/039 , H01L2224/04026 , H01L2224/05083 , H01L2224/05109 , H01L2224/05123 , H01L2224/05138 , H01L2224/05163 , H01L2224/05166 , H01L2224/0517 , H01L2224/05562 , H01L2224/27462 , H01L2224/2747 , H01L2224/279 , H01L2224/29006 , H01L2224/29011 , H01L2224/29023 , H01L2224/29109 , H01L2224/29144 , H01L2224/32058 , H01L2224/32227 , H01L2224/83121 , H01L2224/83193 , H01L2224/8381 , H01L2224/83825 , H01L2224/94 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01074 , H01L2924/1461 , H01L2924/164 , H01L2924/00014 , H01L2924/01049 , H01L2224/03 , H01L2924/01042 , H01L2924/01072 , H01L2924/01004 , H01L2224/83 , H01L2224/0345 , H01L2224/0361 , H01L2224/03462
Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.
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公开(公告)号：US20170174511A1
公开(公告)日：2017-06-22
申请号：US15007698
申请日：2016-01-27
Applicant: Texas Instruments Incorporated
Inventor： John Charles Ehmke
CPC classification number: B81C99/004 , B81C1/00904
Abstract: A method of leak detection of hermetically sealed cavities semiconductor devices is provided. Scribe streets are formed with access from each packaged device on a first substrate to the edge of the first substrate. The first substrate is attached to a second substrate, forming gaps between the two substrates. A cavity is formed around a packaged device on the first substrate by attaching a bond ring to the first substrate and an optically transparent window above the bonding ring. The cavity is evacuated. A high powered laser beam strikes the top surface of the device on the first substrate within the cavity and creates a vertical surface displacement of the first substrate. The vertical surface displacement is monitored using a separate interrogation laser beam. Leakage of the cavity can be measured by characterizing the resonance decay rate, Q.
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Patent Agency Ranking
公开(公告)号：US11858806B2
公开(公告)日：2024-01-02
申请号：US17399832
申请日：2021-08-11
Applicant: Texas Instruments Incorporated
Inventor： John Charles Ehmke , Ivan Kmecko
CPC classification number: B81B7/0041 , B81C1/00293 , B81C2203/0118
Abstract: In described examples, a first metal layer is configured along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is adjacent the first metal layer. The second metal layer includes a cantilever. The cantilever is configured to deform by bonding the first substrate to the second substrate. The deformed cantilevered is configured to impede contaminants against contacting an element within the cavity.
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公开(公告)号：US11835739B2
公开(公告)日：2023-12-05
申请号：US17124158
申请日：2020-12-16
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： John Charles Ehmke
CPC classification number: G02B5/003 , G02B1/115 , G02B5/285 , G02B27/0018 , G02B26/0833
Abstract: A system includes an optical film stack, where the optical film stack includes a substrate and a first inorganic layer on the substrate. The optical film stack also includes a first dielectric layer on the first inorganic layer and a first metal layer on the first dielectric layer. The optical film stack also includes a second dielectric layer on the first metal layer and a second inorganic layer on the second dielectric layer. The optical film stack also includes a second metal layer on the second inorganic layer.
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公开(公告)号：US20200180946A1
公开(公告)日：2020-06-11
申请号：US16215628
申请日：2018-12-10
Applicant: Texas Instruments Incorporated
Inventor： John Charles Ehmke , Ivan Kmecko
Abstract: In described examples, a first metal layer is arranged along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is arranged adjacent to the first metal layer, where the second metal layer includes a cantilever. The cantilever is arranged to deform in response to forces applied from a contacting structure of the second substrate during bonding of the first substrate to the second substrate. The deformed cantilevered is arranged to impede contaminants against contacting an element within the cavity.
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公开(公告)号：US11000915B2
公开(公告)日：2021-05-11
申请号：US15087120
申请日：2016-03-31
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： John Charles Ehmke , Simon Joshua Jacobs
IPC: B23K20/02 , B23K20/16 , C25D5/12 , B23K20/233 , B23K20/24 , C25D5/50 , C25D7/12 , C25D5/10 , C25D5/14 , B81C1/00 , B23K35/30 , B23K101/42
Abstract: In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.
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公开(公告)号：US10759658B2
公开(公告)日：2020-09-01
申请号：US16215628
申请日：2018-12-10
Applicant: Texas Instruments Incorporated
Inventor： John Charles Ehmke , Ivan Kmecko
Abstract: In described examples, a first metal layer is arranged along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is arranged adjacent to the first metal layer, where the second metal layer includes a cantilever. The cantilever is arranged to deform in response to forces applied from a contacting structure of the second substrate during bonding of the first substrate to the second substrate. The deformed cantilevered is arranged to impede contaminants against contacting an element within the cavity.
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