公开(公告)号：US20190393083A1

公开(公告)日：2019-12-26

申请号：US16563007

申请日：2019-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya YAMAGUCHI ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Syuji NOZAWA ,  Makoto FUJIKAWA

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/67

Abstract: A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.

公开(公告)号：US20180264516A1

公开(公告)日：2018-09-20

申请号：US15915392

申请日：2018-03-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto FUJIKAWA ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Tatsuya YAMAGUCHI ,  Syuji NOZAWA

IPC: B05D1/00

CPC classification number: B05D1/60 ,  B05D1/002 ,  C23C16/4411 ,  C23C16/45523 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45591 ,  C23C16/45597 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/67017 ,  H01L21/67109

Abstract: A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.

公开(公告)号：US20160280536A1

公开(公告)日：2016-09-29

申请号：US14777778

申请日：2014-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kippei SUGITA ,  Hiroyuki HASHIMOTO

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B82Y40/00

Abstract: A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.

Abstract translation: 通过制备下部结构制造中空结构，该下部结构包括凹部，通过气相沉积聚合方法在下部结构上沉积由有机膜构成的牺牲膜以用牺牲膜掩埋凹部，除去不需要的部分 牺牲膜，在牺牲膜上形成上部结构，去除不需要的部分，并且通过去除牺牲膜在下部结构和上部结构之间形成气隙。

公开(公告)号：US20180286744A1

公开(公告)日：2018-10-04

申请号：US15936805

申请日：2018-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya YAMAGUCHI ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Syuji NOZAWA ,  Makoto FUJIKAWA

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/76826 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76877 ,  H01L45/1675

Abstract: A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.

公开(公告)号：US20220005690A1

公开(公告)日：2022-01-06

申请号：US17282928

申请日：2019-10-11

Applicant: TOKYO ELECTRON LIMITED ,  JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Yuki TANAKA ,  Hiroyuki HASHIMOTO ,  Mayuko NAKAMURA ,  Takashi MASUDA ,  Hideyuki TAKAGISHI

IPC: H01L21/02

Abstract: A method of forming a silicon film on a substrate having a fine pattern includes performing surface treatment with an adhesion promoter on the substrate having the fine pattern, forming a coating film by applying a silane polymer solution to the substrate on which the surface treatment has been performed, and heating the coating film.

公开(公告)号：US20180025917A1

公开(公告)日：2018-01-25

申请号：US15654307

申请日：2017-07-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi YATSUDA ,  Takashi HAYAKAWA ,  Hiroshi OKUNO ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Tatsuya YAMAGUCHI

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31127 ,  H01L21/31138 ,  H01L21/67063 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/76811 ,  H01L23/53238 ,  H01L23/53295

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

公开(公告)号：US20180261458A1

公开(公告)日：2018-09-13

申请号：US15910463

申请日：2018-03-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya YAMAGUCHI ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Syuji NOZAWA ,  Makoto FUJIKAWA

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/265 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/0337 ,  H01J37/00 ,  H01L21/02057 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/67034 ,  H01L21/67063 ,  H01L21/6715 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/67703 ,  H01L29/785

Abstract: There is provided a semiconductor device manufacturing method including: forming a first mask film composed of a polymer having a urea bond by supplying a raw material to a surface of the substrate for polymerization; forming a second mask inorganic film to be laminated on the first mask film; forming a pattern on the first mask film and the second mask inorganic film and performing an ion implantation on the surface of the substrate; removing the second mask inorganic film after the ion implantation; and removing the first mask film by heating the substrate after the ion implantation and depolymerizing the polymer.

公开(公告)号：US20200152475A1

公开(公告)日：2020-05-14

申请号：US16745720

申请日：2020-01-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi YATSUDA ,  Takashi HAYAKAWA ,  Hiroshi OKUNO ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Tatsuya YAMAGUCHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/768

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

公开(公告)号：US20180269069A1

公开(公告)日：2018-09-20

申请号：US15919671

申请日：2018-03-13

Applicant: Tokyo Electron Limited

Inventor： Tatsuya YAMAGUCHI ,  Reiji NIINO ,  Hiroyuki HASHIMOTO ,  Syuji NOZAWA ,  Makoto FUJIKAWA

IPC: H01L21/308 ,  H01L21/266 ,  H01L21/311

CPC classification number: H01L21/3081 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0465 ,  H01L21/266 ,  H01L21/3086 ,  H01L21/31144

Abstract: A method for manufacturing a semiconductor device by processing a substrate, the method includes forming a first film of a polymer having urea bonds by supplying a polymerization raw material to a surface of the substrate, subsequently, forming a pattern by etching the first film, and subsequently, forming a second film of a material different from the polymer of the first film by performing a substitution processing to the first film by supplying a reaction gas, which reacts with the polymerization raw material to generate a product, to the substrate while heating the substrate to depolymerize the polymer.