Dynamic quantity sensor device and manufacturing method of the same
    1.
    发明授权
    Dynamic quantity sensor device and manufacturing method of the same 有权
    动力传感器装置及其制造方法相同

    公开(公告)号:US08829627B2

    公开(公告)日:2014-09-09

    申请号:US13479393

    申请日:2012-05-24

    摘要: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

    摘要翻译: 动态量传感器装置包括:具有第一和第二动态量检测单元的第一和第二动态量传感器; 以及彼此结合以提供第一和第二空间的第一和第二基板。 第一和第二单元分别气密地容纳在第一和第二空间中。 第一衬底的SOI层被沟槽分成多个半导体区域。 半导体区域的第一和第二部分分别提供第一和第二单元。 第二部分包括:具有第二可移动电极的第二可移动半导体区域,其通过对嵌入的氧化膜的牺牲蚀刻而提供; 以及具有第二固定电极的第二固定半导体区域。 第二传感器通过测量可根据第二动态量改变的第二可动电极和固定电极之间的电容来检测第二动态量。

    SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    半导体物理量传感器及其制造方法

    公开(公告)号:US20110227174A1

    公开(公告)日:2011-09-22

    申请号:US13033941

    申请日:2011-02-24

    IPC分类号: H01L29/84 H01L21/50

    摘要: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

    摘要翻译: 在半导体物理量传感器中,在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。 准备具有由电绝缘材料制成的表面的支撑基板。 第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。 此外,在第一半导体衬底中形成传感器结构。 传感器结构电连接到布线图案。 将盖接合到第一半导体基板,使得传感器结构被气密密封。

    Semiconductor physical quantity sensor
    4.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号:US08759926B2

    公开(公告)日:2014-06-24

    申请号:US13033941

    申请日:2011-02-24

    IPC分类号: G11C11/15

    摘要: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

    摘要翻译: 在半导体物理量传感器中,在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。 准备具有由电绝缘材料制成的表面的支撑基板。 第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。 此外,在第一半导体衬底中形成传感器结构。 传感器结构电连接到布线图案。 将盖接合到第一半导体基板,使得传感器结构被气密密封。

    Sensor for detecting acceleration and angular velocity
    8.
    发明授权
    Sensor for detecting acceleration and angular velocity 有权
    用于检测加速度和角速度的传感器

    公开(公告)号:US08567248B2

    公开(公告)日:2013-10-29

    申请号:US12781852

    申请日:2010-05-18

    申请人: Keisuke Gotoh

    发明人: Keisuke Gotoh

    IPC分类号: G01P15/125

    摘要: A sensor includes an acceleration detector, an angular velocity detector, a driver, and first to fourth springs. Each detector includes a pair of fixed electrodes, a pair of movable electrodes, and a pair of supporting members for supporting the moveable electrodes. The driver causes the supporting members to vibrate in opposite phases in a first direction. The first spring couples the supporting members of the accelereation detector and has elasticity in a second direction perpendicular to the first direction. The second spring couples the supporting members of the acceleration detector to a base and has elasticity in both directions. The third spring couples the supporting members of the acceleration detector to the supporting members of the angular velocity detector and has elasticity in both directions. The fourth spring couples the supporting members to the movable electrodes of the angular velocity detector and has elasticity in the second direction.

    摘要翻译: 传感器包括加速度检测器,角速度检测器,驱动器和第一至第四弹簧。 每个检测器包括一对固定电极,一对可移动电极和用于支撑可移动电极的一对支撑构件。 驾驶员使支撑构件在第一方向上以相反的相位振动。 第一弹簧联接加速度检测器的支撑构件,并且在垂直于第一方向的第二方向上具有弹性。 第二弹簧将加速度检测器的支撑构件联接到基座并且在两个方向上具有弹性。 第三弹簧将加速度检测器的支撑构件耦合到角速度检测器的支撑构件,并且在两个方向上具有弹性。 第四弹簧将支撑构件联接到角速度检测器的可动电极,并且在第二方向上具有弹性。

    Capacitive sensor device
    9.
    发明授权
    Capacitive sensor device 有权
    电容传感器装置

    公开(公告)号:US08310248B2

    公开(公告)日:2012-11-13

    申请号:US12656542

    申请日:2010-02-02

    IPC分类号: G01R27/26

    摘要: A capacitive sensor device includes first and second sensor capacitors coupled in series, a clock signal generating part, an operational amplifier, a feedback capacitor, a compensating capacitor, and a compensating signal generating part. The clock signal generating part generates a first clock signal and the second clock signal applied to the first and second sensor capacitors, respectively. The compensating signal generating part generates a compensating signal applied to the compensating capacitor. The first clock signal and the second clock signal have the same frequency and the same amplitude and have phases being opposite each other. The compensating signal has a frequency same as the first clock signal and the second clock signal, has a phase same as one of the first clock signal and the second clock signal, and has an amplitude that is adjustable.

    摘要翻译: 电容传感器装置包括串联耦合的第一传感器电容器和第二传感器电容器,时钟信号产生部件,运算放大器,反馈电容器,补偿电容器和补偿信号产生部件。 时钟信号产生部分分别产生施加到第一和第二传感器电容器的第一时钟信号和第二时钟信号。 补偿信号生成部生成施加到补偿电容器的补偿信号。 第一时钟信号和第二时钟信号具有相同的频率和相同的幅度并且具有彼此相反的相位。 补偿信号具有与第一时钟信号和第二时钟信号相同的频率,具有与第一时钟信号和第二时钟信号中的一个相同的相位,并且具有可调整的幅度。

    Capacitive sensor device
    10.
    发明申请
    Capacitive sensor device 有权
    电容传感器装置

    公开(公告)号:US20100219848A1

    公开(公告)日:2010-09-02

    申请号:US12656542

    申请日:2010-02-02

    IPC分类号: G01R27/26

    摘要: A capacitive sensor device includes first and second sensor capacitors coupled in series, a clock signal generating part, an operational amplifier, a feedback capacitor, a compensating capacitor, and a compensating signal generating part. The clock signal generating part generates a first clock signal and the second clock signal applied to the first and second sensor capacitors, respectively. The compensating signal generating part generates a compensating signal applied to the compensating capacitor. The first clock signal and the second clock signal have the same frequency and the same amplitude and have phases being opposite each other. The compensating signal has a frequency same as the first clock signal and the second clock signal, has a phase same as one of the first clock signal and the second clock signal, and has an amplitude that is adjustable.

    摘要翻译: 电容传感器装置包括串联耦合的第一传感器电容器和第二传感器电容器,时钟信号产生部件,运算放大器,反馈电容器,补偿电容器和补偿信号产生部件。 时钟信号产生部分分别产生施加到第一和第二传感器电容器的第一时钟信号和第二时钟信号。 补偿信号生成部生成施加到补偿电容器的补偿信号。 第一时钟信号和第二时钟信号具有相同的频率和相同的幅度并且具有彼此相对的相位。 补偿信号具有与第一时钟信号和第二时钟信号相同的频率,具有与第一时钟信号和第二时钟信号中的一个相同的相位,并且具有可调整的幅度。