Micropatterned component and method for manufacturing a micropatterned component
    1.
    发明授权
    Micropatterned component and method for manufacturing a micropatterned component 有权
    微图案组件和用于制造微图案组件的方法

    公开(公告)号:US09229020B2

    公开(公告)日:2016-01-05

    申请号:US14120386

    申请日:2014-05-14

    Inventor: Johannes Classen

    Abstract: A micropatterned component, for measuring accelerations and/or yaw rates, including a substrate having a principal plane of extension of the substrate, an electrode, and a further electrode; the electrode having a principal plane of extension of the electrode, and the further electrode having a principal plane of extension of the further electrode; the principal plane of extension of the electrode being set parallelly to a normal direction perpendicular to the principal plane of extension of the substrate; the principal plane of extension of the further electrode being set parallelly to the normal direction; the electrode having an electrode height extending in the normal direction; the electrode having a flow channel extending completely through the electrode in a direction parallel to the principal plane of extension of the substrate; the flow channel having a channel depth extending parallelly to the normal direction; the channel depth being less than the electrode height.

    Abstract translation: 用于测量加速度和/或偏转速率的微图案化部件,包括具有基底的主平面延伸的基底,电极和另外的电极; 所述电极具有所述电极的延伸的主平面,并且所述另一电极具有所述另一电极的延伸的主平面; 电极的延伸主平面平行于垂直于衬底延伸主平面的法线方向设置; 另一电极的延伸主平面平行于法线方向设置; 该电极具有沿法线方向延伸的电极高度; 所述电极具有在平行于所述基板的延伸主平面的方向上完全穿过所述电极的流动通道; 所述流路具有平行于所述法线方向延伸的通道深度; 通道深度小于电极高度。

    SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    半导体物理量传感器及其制造方法

    公开(公告)号:US20110227174A1

    公开(公告)日:2011-09-22

    申请号:US13033941

    申请日:2011-02-24

    Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

    Abstract translation: 在半导体物理量传感器中,在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。 准备具有由电绝缘材料制成的表面的支撑基板。 第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。 此外,在第一半导体衬底中形成传感器结构。 传感器结构电连接到布线图案。 将盖接合到第一半导体基板,使得传感器结构被气密密封。

    Micromechanical structure, in particular sensor arrangement, and corresponding operating method
    4.
    发明授权
    Micromechanical structure, in particular sensor arrangement, and corresponding operating method 有权
    微机械结构,特别是传感器布置,以及相应的操作方法

    公开(公告)号:US08901679B2

    公开(公告)日:2014-12-02

    申请号:US13942744

    申请日:2013-07-16

    Abstract: A micromechanical structure, in particular a sensor arrangement, includes at least one micromechanical functional layer, a CMOS substrate region arranged below the at least one micromechanical functional layer, and an arrangement of one or more contact elements. The CMOS substrate region has at least one configurable circuit arrangement. The arrangement of one or more contact elements is arranged between the at least one micromechanical functional layer and the CMOS substrate region and is electrically connected to the micromechanical functional layer and the circuit arrangement. The configurable circuit arrangement is designed in such a way that the one or more contact elements are configured to be selectively connected to electrical connection lines in the CMOS substrate region.

    Abstract translation: 微机械结构,特别是传感器装置,包括至少一个微机械功能层,布置在至少一个微机械功能层下方的CMOS衬底区域以及一个或多个接触元件的布置。 CMOS衬底区域具有至少一个可配置电路布置。 一个或多个接触元件的布置被布置在至少一个微机械功能层和CMOS衬底区域之间,并且电连接到微机械功能层和电路装置。 可配置电路布置被设计成使得一个或多个接触元件被配置为选择性地连接到CMOS衬底区域中的电连接线。

    MICROMECHANICAL STRUCTURE, IN PARTICULAR SENSOR ARRANGEMENT, AND CORRESPONDING OPERATING METHOD
    5.
    发明申请
    MICROMECHANICAL STRUCTURE, IN PARTICULAR SENSOR ARRANGEMENT, AND CORRESPONDING OPERATING METHOD 有权
    微机械结构,特别是传感器布置和相应的操作方法

    公开(公告)号:US20140021515A1

    公开(公告)日:2014-01-23

    申请号:US13942744

    申请日:2013-07-16

    Abstract: A micromechanical structure, in particular a sensor arrangement, includes at least one micromechanical functional layer, a CMOS substrate region arranged below the at least one micromechanical functional layer, and an arrangement of one or more contact elements. The CMOS substrate region has at least one configurable circuit arrangement. The arrangement of one or more contact elements is arranged between the at least one micromechanical functional layer and the CMOS substrate region and is electrically connected to the micromechanical functional layer and the circuit arrangement. The configurable circuit arrangement is designed in such a way that the one or more contact elements are configured to be selectively connected to electrical connection lines in the CMOS substrate region.

    Abstract translation: 微机械结构,特别是传感器装置,包括至少一个微机械功能层,布置在至少一个微机械功能层下方的CMOS衬底区域以及一个或多个接触元件的布置。 CMOS衬底区域具有至少一个可配置电路布置。 一个或多个接触元件的布置被布置在至少一个微机械功能层和CMOS衬底区域之间,并且电连接到微机械功能层和电路装置。 可配置电路布置被设计成使得一个或多个接触元件被配置为选择性地连接到CMOS衬底区域中的电连接线。

    MEMS SENSOR
    6.
    发明申请
    MEMS SENSOR 审中-公开
    MEMS传感器

    公开(公告)号:US20120104520A1

    公开(公告)日:2012-05-03

    申请号:US13347483

    申请日:2012-01-10

    Abstract: An MEMS sensor includes: a functional layer having a sensor section; a wiring substrate disposed facing the functional layer and having a conduction pathway for the sensor section; a first metal layer provided on the surface of the sensor section which faces the wiring substrate; and a second metal layer provided on the surface of the wiring substrate which faces the sensor section, wherein the first and second metal layers are joined to each other, a space is formed between a movable portion of the sensor section and the wiring substrate, and a stopper which is composed of a third metal layer being the same film as the first metal layer formed on the functional layer side and a contact portion formed on the wiring substrate side which come into contact with each other is formed between the functional layer and the wiring substrate.

    Abstract translation: MEMS传感器包括:具有传感器部分的功能层; 配置在所述功能层上的配线基板,具有所述传感器部的导通路径; 设置在传感器部分的面对布线基板的表面上的第一金属层; 以及设置在所述布线基板的面对所述传感器部的表面的第二金属层,其中,所述第一和第二金属层彼此接合,在所述传感器部的可动部和所述布线基板之间形成空间,以及 由功能层和第一金属层构成的第三金属层与形成在功能层侧的第一金属层相同的第三金属层和形成在布线基板一侧的接触部分形成的塞子形成在功能层和第二金属层之间, 布线基板。

    MICROPATTERNED COMPONENT AND METHOD FOR MANUFACTURING A MICROPATTERNED COMPONENT
    8.
    发明申请
    MICROPATTERNED COMPONENT AND METHOD FOR MANUFACTURING A MICROPATTERNED COMPONENT 有权
    用于制造微波组件的微波组件和方法

    公开(公告)号:US20140339654A1

    公开(公告)日:2014-11-20

    申请号:US14120386

    申请日:2014-05-14

    Inventor: Johannes Classen

    Abstract: A micropatterned component, for measuring accelerations and/or yaw rates, including a substrate having a principal plane of extension of the substrate, an electrode, and a further electrode; the electrode having a principal plane of extension of the electrode, and the further electrode having a principal plane of extension of the further electrode; the principal plane of extension of the electrode being set parallelly to a normal direction perpendicular to the principal plane of extension of the substrate; the principal plane of extension of the further electrode being set parallelly to the normal direction; the electrode having an electrode height extending in the normal direction; the electrode having a flow channel extending completely through the electrode in a direction parallel to the principal plane of extension of the substrate; the flow channel having a channel depth extending parallelly to the normal direction; the channel depth being less than the electrode height.

    Abstract translation: 用于测量加速度和/或偏转速率的微图案化部件,包括具有基底的主平面延伸的基底,电极和另外的电极; 所述电极具有所述电极的延伸的主平面,并且所述另一电极具有所述另一电极的延伸的主平面; 电极的延伸主平面平行于垂直于衬底延伸主平面的法线方向设置; 另一电极的延伸主平面平行于法线方向设置; 该电极具有沿法线方向延伸的电极高度; 所述电极具有在平行于所述基板的延伸主平面的方向上完全穿过所述电极的流动通道; 所述流路具有平行于所述法线方向延伸的通道深度; 通道深度小于电极高度。

    Semiconductor physical quantity sensor
    9.
    发明授权
    Semiconductor physical quantity sensor 有权
    半导体物理量传感器

    公开(公告)号:US08759926B2

    公开(公告)日:2014-06-24

    申请号:US13033941

    申请日:2011-02-24

    Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

    Abstract translation: 在半导体物理量传感器中,在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。 准备具有由电绝缘材料制成的表面的支撑基板。 第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。 此外,在第一半导体衬底中形成传感器结构。 传感器结构电连接到布线图案。 将盖接合到第一半导体基板,使得传感器结构被气密密封。

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