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公开(公告)号:US20220371047A1
公开(公告)日:2022-11-24
申请号:US17623392
申请日:2020-06-25
Applicant: Tokyo Electron Limited
Inventor: Yusaku HASHIMOTO , Masatoshi KAWAKITA , Kosuke YOSHIHARA
Abstract: A coating method of supplying a treatment solution to a substrate and coating the substrate with the treatment solution by a spin coating method, includes mixing a solvent for the treatment solution lower in surface tension than the treatment solution into the treatment solution concurrently with a start of supply of the treatment solution or later than the start of the supply of the treatment solution, and then supplying the treatment solution to the substrate.
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公开(公告)号:US20240249951A1
公开(公告)日:2024-07-25
申请号:US18418757
申请日:2024-01-22
Applicant: Tokyo Electron Limited
Inventor: Kosuke YOSHIHARA , Yuichi TERASHITA , Yukinobu OTSUKA , Shinsuke TAKAKI , Hiroki TADATOMO , Naoki SHIBATA
IPC: H01L21/308 , C23C16/04 , C23C16/455 , C23C16/46 , H01L21/02 , H01L21/324
CPC classification number: H01L21/3081 , C23C16/042 , C23C16/45517 , C23C16/46 , H01L21/02491 , H01L21/3247
Abstract: A substrate treatment method includes: developing a substrate which has a coating film of a metal-containing resist formed thereon and has been subjected to an exposure treatment and a heat treatment after the exposure treatment, the developing including: exposing the substrate to an acid atmosphere being an atmosphere containing gas of a weak acid under a pressure of an atmospheric pressure or higher; and removing a product produced by a reaction between the metal-containing resist and the gas of the weak acid, by heating the substrate.
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公开(公告)号:US20200147637A1
公开(公告)日:2020-05-14
申请号:US16468356
申请日:2017-11-24
Applicant: Tokyo Electron Limited
Inventor: Shogo INABA , Kosuke YOSHIHARA , Shinichi HATAKEYAMA
Abstract: A method for coating a top of a substrate with a coating solution, the method includes: supplying, before a solution film of the coating solution formed on the substrate dries, a solvent for the coating solution to a peripheral portion on the solution film of the coating solution on the substrate while rotating the substrate at a predetermined rotation speed to form a mixed layer of the coating solution and the solvent at the peripheral portion; and then, controlling a film thickness of the coating solution after drying by rotating the substrate at a rotation speed higher than the predetermined rotation speed to push the mixed layer to an outer peripheral side.
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4.
公开(公告)号:US20240120217A1
公开(公告)日:2024-04-11
申请号:US18473459
申请日:2023-09-25
Applicant: Tokyo Electron Limited
Inventor: Shinichiro KAWAKAMI , Kosuke YOSHIHARA , Satoru SHIMURA , Yuhei KUWAHARA , Tomoya ONITSUKA , Soichiro OKADA , Tetsunari FURUSHO
IPC: H01L21/67 , H01L21/027
CPC classification number: H01L21/67109 , H01L21/027
Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.
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公开(公告)号:US20220113628A1
公开(公告)日:2022-04-14
申请号:US17496965
申请日:2021-10-08
Applicant: Tokyo Electron Limited
Inventor: Keiichi TANAKA , Kosuke YOSHIHARA , Yoshihiro KONDO , Makoto MURAMATSU , Teruhiko KODAMA
Abstract: A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.
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