公开(公告)号：US20240071723A1

公开(公告)日：2024-02-29

申请号：US18237067

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Koki TANAKA ,  Ryu NAGAI ,  Masahiko YOKOI ,  Ikko TANAKA

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J2237/334

Abstract: An etching method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The etching method further includes etching the substrate with plasma generated in the chamber, thereby forming a recess in the substrate. In the etching, an electrical bias is supplied to the substrate support, to attract ions from the plasma into the substrate. In the etching, at least one of a bias frequency, which is a reciprocal of a time length of a waveform cycle of the electrical bias, and a pulse duty ratio of a pulsed electrical bias is modified to maintain an ion energy flux to the substrate.

公开(公告)号：US20220285169A1

公开(公告)日：2022-09-08

申请号：US17752877

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA

IPC: H01L21/3213 ,  H01L21/308 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.

公开(公告)号：US20220157610A1

公开(公告)日：2022-05-19

申请号：US17666570

申请日：2022-02-08

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20230251567A1

公开(公告)日：2023-08-10

申请号：US18121700

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Taiki MIURA ,  Jaeyoung PARK ,  Yusuke FUKUNAGA

IPC: G03F1/80 ,  H01J37/32 ,  G03F7/075

CPC classification number: G03F1/80 ,  G03F7/075 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32798 ,  H01J2237/334

Abstract: An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.

公开(公告)号：US20230215691A1

公开(公告)日：2023-07-06

申请号：US18121608

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Takatoshi ORUI ,  Kae KUMAGAI ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32798 ,  H01J2237/334

Abstract: A technique increases verticality in etching. An etching method is a method for etching a target film with a plasma processing apparatus including a chamber and a substrate support located in the chamber to support a substrate, the substrate support holding a substrate that includes the target film, the target film including a patterned mask film having at least one opening. The etching method includes supplying a process gas containing an HF gas into the chamber, and etching the target film by: generating plasma from the process gas in the chamber with radio-frequency power having a first frequency, and applying a pulsed voltage periodically to the substrate support at a second frequency lower than the first frequency.

公开(公告)号：US20230197458A1

公开(公告)日：2023-06-22

申请号：US18113078

申请日：2023-02-23

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20220148884A1

公开(公告)日：2022-05-12

申请号：US17517723

申请日：2021-11-03

Applicant: Tokyo Electron Limited

Inventor： Takatoshi ORUI ,  Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.

公开(公告)号：US20250046615A1

公开(公告)日：2025-02-06

申请号：US18918152

申请日：2024-10-17

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20230215700A1

公开(公告)日：2023-07-06

申请号：US18121611

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Kae KUMAGAI ,  Motoi TAKAHASHI ,  Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Takatoshi ORUI

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32798 ,  H01L21/02164 ,  H01L21/0217 ,  H01J37/32082 ,  H01J37/32458 ,  H01J2237/334

Abstract: A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

公开(公告)号：US20220367202A1

公开(公告)日：2022-11-17

申请号：US17738003

申请日：2022-05-06

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA

IPC: H01L21/311 ,  H01J37/32

Abstract: A substrate processing method includes: providing a substrate including a silicon-containing film in a chamber; supplying a processing gas including HF gas into the chamber; etching the silicon-containing film with plasma generated from the processing gas, thereby forming a recess in the silicon-containing film; and controlling a partial pressure of the HF gas to decrease the partial pressure of the HF gas with an increase of an aspect ratio of the recess.