公开(公告)号：US5306671A

公开(公告)日：1994-04-26

申请号：US718674

申请日：1991-06-21

申请人： Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa

发明人： Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa

IPC分类号： H01L21/302 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/3065 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28167 ,  Y10S438/906 ,  Y10S438/974

摘要： A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.

摘要翻译： 本发明的主要特征是清洁半导体衬底的表面，而不会在其表面上提供损伤层。 通过使用含氟气体的等离子体蚀刻在硅衬底的表面上形成的自然氧化膜。 通过使用含氟气体以除去在上述等离子体蚀刻步骤中形成的表面损伤层和碳氟化合物层，再次对半导体衬底的表面进行等离子体蚀刻。 半导体衬底表面在低压下用紫外线照射，以便在后一等离子体蚀刻时解离和去除化学吸附到半导体衬底表面上的氟原子。

公开(公告)号：US5474615A

公开(公告)日：1995-12-12

申请号：US993514

申请日：1992-12-17

申请人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

发明人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  C03C15/00

CPC分类号： H01L21/02046 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/67028 ,  Y10S438/963

摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.

摘要翻译： 公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。 在其上形成图案或沟槽的被处理基板位于处理容器中。 与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。 反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。 根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。 因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

公开(公告)号：US5038013A

公开(公告)日：1991-08-06

申请号：US562669

申请日：1990-08-03

申请人： Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida

发明人： Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32623 ,  H01J37/32688

摘要： A plasma etching apparatus comprises a chamber, a holding table for holding samples, such as a semiconductor substrate to be etched, in the chamber, a plasma-generating device for generating a plasma within the chamber, and a magnetic-field-forming device which forms a magnetic field perpendicular to the surface of the sample placed on the holding table and parallel the inner wall of the chamber.

摘要翻译： 等离子体蚀刻装置包括：腔室，用于保持腔室中待蚀刻的半导体衬底等样品的保持台，用于在腔室内产生等离子体的等离子体产生装置;以及磁场形成装置， 形成垂直于放置在保持台上并平行于室的内壁的样品表面的磁场。

公开(公告)号：US5223085A

公开(公告)日：1993-06-29

申请号：US653634

申请日：1991-02-12

申请人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

发明人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32137 ,  C23F4/00 ,  H01L21/32136

摘要： A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.

摘要翻译： 公开了一种通过电子回旋共振产生的反应气体的等离子体各向异性蚀刻待处理的基板的方法。 待处理的基板位于处理容器中，并且将氯气和氯化氢气体引入处理容器中。 从引入处理容器的氯气和氯化氢气体的混合物中，通过电子回旋共振产生混合气体的等离子体。 根据这种方法，氯的等离子体的能量由H +的等离子体摄取，这导致氯的动能降低。 结果，氯的等离子体沿护套电场垂直地撞击待处理的基板。 因此，能够进行强烈的各向异性特性的蚀刻。

公开(公告)号：US5147465A

公开(公告)日：1992-09-15

申请号：US605427

申请日：1990-10-30

申请人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

发明人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

IPC分类号： H01L21/302 ,  B08B7/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/304 ,  H01L21/3065

CPC分类号： H01L21/67028 ,  B08B7/0035 ,  H01J37/32357

摘要： A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.

摘要翻译： 一种清洁表面的方法，包括通过激发氦气产生氦离子，电子和亚稳态氦，将所述亚稳态氦与氦离子和电子分离，并将待处理物质暴露于其外部物质的表面上 从氦离子和电子分离的亚稳态氦从物质中除去异物。

公开(公告)号：US5318654A

公开(公告)日：1994-06-07

申请号：US893832

申请日：1992-06-04

申请人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

发明人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

IPC分类号： H01L21/302 ,  B08B7/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/304 ,  H01L21/3065

CPC分类号： H01L21/67028 ,  B08B7/0035 ,  H01J37/32357

摘要： An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.

摘要翻译： 一种用于清洁表面的设备包括第一和第二反应容器，用于在第二反应容器中保持在其表面存在异物的待处理物质的保持装置，用于向第一反应中供应氦气的装置 容器，用于通过在第一反应容器中激发氦气产生氦离子，电子和亚稳态氦的装置，以及用于分离在第一反应容器中产生的亚稳态氦并将亚稳态氦引入第二反应容器的装置。

公开(公告)号：US4877509A

公开(公告)日：1989-10-31

申请号：US269688

申请日：1988-11-10

申请人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

发明人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32293 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32678

摘要： An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.

摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的等离子体处理半导体晶片的装置，其中通过矩形波导，矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。 偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。 在微波的一个周期内，通过在TE11模式一周内旋转微波的电场方向，将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。 因此，供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化，使得其中等离子体产生的密度在空间上均匀。 在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片，以对晶片进行处理。

公开(公告)号：US6097052A

公开(公告)日：2000-08-01

申请号：US882300

申请日：1997-06-25

申请人： Yoshinori Tanaka ,  Mitsuya Kinoshita ,  Shinya Watanabe ,  Tatsuo Kasaoka ,  Moriaki Akazawa ,  Toshiaki Ogawa

发明人： Yoshinori Tanaka ,  Mitsuya Kinoshita ,  Shinya Watanabe ,  Tatsuo Kasaoka ,  Moriaki Akazawa ,  Toshiaki Ogawa

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/283 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/1085 ,  H01L21/76802 ,  H01L23/5226 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/90 ,  H01L2924/0002

摘要： A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11.

公开(公告)号：US06586329B1

公开(公告)日：2003-07-01

申请号：US09544997

申请日：2000-04-06

申请人： Yoshinori Tanaka ,  Mitsuya Kinoshita ,  Shinya Watanabe ,  Tatsuo Kasaoka ,  Moriaki Akazawa ,  Toshiaki Ogawa

发明人： Yoshinori Tanaka ,  Mitsuya Kinoshita ,  Shinya Watanabe ,  Tatsuo Kasaoka ,  Moriaki Akazawa ,  Toshiaki Ogawa

IPC分类号： H01L21311

CPC分类号： H01L27/1085 ,  H01L21/76802 ,  H01L23/5226 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact hole having an opening diameter smaller than the minimum dimension that can be formed by photolithographic technique is formed. Using an interlayer insulating film 8 formed on a semiconductor substrate as an etching mask, etching is carried out halfway to form an opening 8a. The etching mask is removed, and a TEOS film 10 is formed on the interlayer oxide film 8. The whole surface is then etched anisotropically to form a contact hole 11.

摘要翻译： 形成开口直径小于可通过光刻技术形成的最小尺寸的接触孔。 使用形成在半导体衬底上的层间绝缘膜8作为蚀刻掩模，进行中间蚀刻以形成开口8a。 除去蚀刻掩模，并在层间氧化膜8上形成TEOS膜10.然后，各向异性地蚀刻整个表面以形成接触孔11。

公开(公告)号：US5100504A

公开(公告)日：1992-03-31

申请号：US668677

申请日：1991-03-07

申请人： Kenji Kawai ,  Toshiaki Ogawa

发明人： Kenji Kawai ,  Toshiaki Ogawa

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/02046 ,  H01L21/02049

摘要： In the first step, a silicon oxide film (21) on a silicon surface (22) is etched away using a CHF.sub.3 gas. After the silicon oxide film is removed, organic matter (23) of the C.sub.x F.sub.y group remains on the silicon surface. In the second step, the organic matter (23) is etched away using a NF.sub.3 gas. The silicon oxide film (21) is etched in preference to underlying silicon (22) by using the CHF.sub.3 gas. A F radical is easily formed from the NF.sub.3 gas used for removing the organic matter (23). At the time of forming this F radical, no residue is formed which makes the silicon surface (22) dirty. Consequently, a clear silicon surface (22) is obtained.

摘要翻译： 在第一步骤中，使用CHF 3气体蚀刻硅表面（22）上的氧化硅膜（21）。 在去除氧化硅膜之后，CxFy基团的有机物质（23）保留在硅表面上。 在第二步骤中，使用NF 3气体蚀刻掉有机物（23）。 优选通过使用CHF 3气体来蚀刻氧化硅膜（21），以优于下面的硅（22）。 由用于除去有机物质的NF 3气体容易地形成F自由基（23）。 在形成该F基团时，不形成使硅表面（22）变脏的残余物。 因此，获得透明的硅表面（22）。