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15 条记录 (耗时 0.031 秒)

    Semiconductor device including a metal wiring with a metal cap
    8.
    发明授权
    Semiconductor device including a metal wiring with a metal cap 失效
    包括具有金属盖的金属布线的半导体装置

    公开(公告)号：US08614510B2

    公开(公告)日：2013-12-24

    申请号：US12726604

    申请日：2010-03-18

    申请人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

    发明人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

    IPC分类号： H01L23/48 ,  H01L23/52

    CPC分类号： H01L21/76826 ,  H01L21/3105 ,  H01L21/76832 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。

    Apparatus for forming a silicon oxide film on a silicon wafer
    9.
    发明授权
    Apparatus for forming a silicon oxide film on a silicon wafer 失效
    用于在硅晶片上形成氧化硅膜的设备

    公开(公告)号：US5489336A

    公开(公告)日：1996-02-06

    申请号：US329651

    申请日：1994-10-25

    申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

    发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

    IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05C3/00

    CPC分类号： H01L21/67103

    摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

    摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。

    Method for forming a silicon oxide film on a silicon waffer
    10.
    发明授权
    Method for forming a silicon oxide film on a silicon waffer 失效
    在硅胶上形成氧化硅膜的方法

    公开(公告)号：US5395645A

    公开(公告)日：1995-03-07

    申请号：US928070

    申请日：1992-08-11

    申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

    发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

    IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05D1/00

    CPC分类号： H01L21/67103

    摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

    摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。