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    PROCESS FOR MAKING LEAD ZIRCONATE TITANATE (PZT) LAYERS AND/OR PLATINUM ELECTRODES AND PRODUCTS THEREOF
    1.
    发明申请
    PROCESS FOR MAKING LEAD ZIRCONATE TITANATE (PZT) LAYERS AND/OR PLATINUM ELECTRODES AND PRODUCTS THEREOF 审中-公开
    制备铅锌酸铅（PZT）层和/或铂电极及其制品的方法

    公开(公告)号：US20160254439A1

    公开(公告)日：2016-09-01

    申请号：US15061205

    申请日：2016-03-04

    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

    Inventor： Daniel M. Potrepka ,  James R. Mulcahy ,  Ronald G. Polcawich

    IPC: H01L41/314 ,  C30B1/02 ,  C30B1/10 ,  H01L41/297 ,  C30B29/16 ,  C30B29/32 ,  C30B29/68 ,  C30B23/08 ,  C30B29/02

    CPC classification number: C30B29/68 ,  C23C14/088 ,  C23C14/185 ,  C23C14/5853 ,  C30B1/02 ,  C30B1/10 ,  C30B23/025 ,  C30B25/183 ,  C30B29/02 ,  C30B29/16 ,  C30B29/32 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/27 ,  H01L41/316 ,  H01L41/319

    Abstract: A method of making a piezoelectric device comprising providing a deposition chamber, the deposition chamber having reduced pressure therein; loading a substrate into the deposition chamber; sputter depositing hexagonal 001 oriented titanium on the substrate; providing an oxygen anneal to convert 001 oriented titanium into 100 oriented rutile TiO2; sputter depositing a 111 or 100 oriented textured conducting material for use as an electrode; sputter depositing a hexagonal 001 oriented titanium and providing an oxygen anneal in a lead oxide environment to convert 001 oriented titanium into 100 oriented rutile TiO2 or PbxTi1-xO3; sputter depositing textured lead zirconate titanate PbZrxTi1-x03 having an 001 orientation as a piezoelectric layer, and sputter depositing a textured electrode on top of the textured lead zirconate titanate; whereby processing of the layers within the deposition chamber provides minimized exposure to ambient contamination and improved texturing in the resulting films.

    Abstract translation: 一种制造压电装置的方法，包括提供沉积室，所述沉积室中的压力降低; 将基板装载到沉积室中; 在基板上溅射沉积六方晶001取向的钛; 提供氧退火以将001取向的钛转化为100取向的金红石TiO 2; 溅射沉积用作电极的111或100取向纹理导电材料; 溅射沉积六方晶001取向的钛，并在氧化铅环境中提供氧退火，将001取向的钛转化为100取向的金红石TiO2或PbxTi1-xO3; 将具有001取向的纹理化锆酸铅PbZrxTi1-x03溅射沉积作为压电层，并且在织构化的锆钛酸铅钛酸盐的顶部溅射沉积织构化电极; 由此沉积室内的层的处理提供最小化的暴露于环境污染和改进所得膜中的纹理化。

    Ferroelectric Mechanical Memory Based on Remanent Displacement and Method
    2.
    发明申请
    Ferroelectric Mechanical Memory Based on Remanent Displacement and Method 审中-公开
    基于残余位移和方法的铁电机械记忆

    公开(公告)号：US20160276014A1

    公开(公告)日：2016-09-22

    申请号：US15131881

    申请日：2016-04-18

    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

    Inventor： Glen Richard Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

    IPC: G11C11/22 ,  H01L43/10 ,  H01L43/02

    CPC classification number: G11C11/221 ,  G11C11/22 ,  G11C11/50 ,  G11C23/00 ,  H01H2057/006 ,  H01L41/094

    Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

    Abstract translation: 一种铁电机械存储器结构，包括衬底，可在第一位置和至少一个第二位置之间移动的MEMS开关元件，所述MEMS开关元件包括第一和第二电极，位于第一和第二电极之间的铁电材料层， 在第一和第二电极之间施加电压，MEMS开关元件在第一位置和第二位置之间移动，以及仅当MEMS开关元件处于第一位置时与第一电极接触的开关触点，其中选择铁电材料 使得铁电材料层内的剩余应变由第一和第二电极施加到铁电材料的电压电势的历史来控制，其中剩余应变足以将MEMS开关元件保持在第一或第二电极 去除电压时的位置。

    CARBON NANOTUBE AND POROUS SUBSTRATE INTEGRATED ENERGETIC DEVICE
    4.
    发明申请
    CARBON NANOTUBE AND POROUS SUBSTRATE INTEGRATED ENERGETIC DEVICE 审中-公开
    碳纳米管和多孔基底集成能量装置

    公开(公告)号：US20140216288A1

    公开(公告)日：2014-08-07

    申请号：US13760422

    申请日：2013-02-06

    Applicant: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I

    Inventor： Luke Currano ,  Madan Dubey ,  Ronald G. Polcawich

    IPC: C06B45/14 ,  F42D1/04

    CPC classification number: F42D1/04 ,  B82Y30/00 ,  C06B33/00 ,  C06B45/00

    Abstract: Embodiments of energetic devices are provided herein. In some embodiments, an energetic device may include a substrate having a plurality of pores formed in a portion of the substrate; a plurality of carbon nanotubes disposed proximate the plurality of pores such that a reaction within one of the plurality of pores or the plurality of carbon nanotubes initiates a reaction within the other of the plurality of pores or the plurality of carbon nanotubes; a solid oxidizer disposed in the plurality of pores and the carbon nanotubes; and an initiator to initiate a reaction within one of the plurality of pores or the plurality of carbon nanotubes.

    Abstract translation: 本文提供了能量装置的实施例。 在一些实施例中，能量装置可以包括具有在衬底的一部分中形成的多个孔的衬底; 多个碳纳米管，其设置在所述多个孔附近，使得所述多个孔或所述多个碳纳米管内的反应在所述多个孔或所述多个碳纳米管的另一个孔内引发反应; 设置在所述多个孔中的固体氧化剂和所述碳纳米管; 和引发剂以引发多个孔或多个碳纳米管之一内的反应。

    Ferroelectric mechanical memory based on remanent displacement and method
    5.
    发明授权
    Ferroelectric mechanical memory based on remanent displacement and method 有权

    公开(公告)号：US10043565B2

    公开(公告)日：2018-08-07

    申请号：US15131881

    申请日：2016-04-18

    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

    Inventor： Glen Richard Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

    IPC: H01L21/02 ,  G11C11/22 ,  G11C11/50 ,  G11C23/00 ,  H01L41/09 ,  H01H57/00

    Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

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