RESONANT SENSOR
    1.
    发明申请
    RESONANT SENSOR 有权
    谐振传感器

    公开(公告)号:US20160061857A1

    公开(公告)日:2016-03-03

    申请号:US14829801

    申请日:2015-08-19

    CPC classification number: G01P15/097 G01P2015/0828

    Abstract: A resonant sensor includes a mover that is movable in a first direction, a supporter that extends in a second direction perpendicular to the first direction, the supporter being connected to the mover and a fixer, the supporter supporting the mover which is movable in the first direction, and a resonator that is vibratable, at least a part of the resonator being embedded in the supporter.

    Abstract translation: 谐振传感器包括可在第一方向上移动的移动器,沿与第一方向垂直的第二方向延伸的支撑件,支撑件连接到移动器和定影器,支撑件支撑可动第一 方向和可振动的谐振器,所述谐振器的至少一部分嵌入在所述支撑件中。

    RESONANT TRANSDUCER
    2.
    发明申请
    RESONANT TRANSDUCER 审中-公开

    公开(公告)号:US20180145656A1

    公开(公告)日:2018-05-24

    申请号:US15814481

    申请日:2017-11-16

    CPC classification number: H03H9/2447 H03H9/02338 H03H2009/02291

    Abstract: A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.

    SENSOR, STRAIN SENSOR, AND PRESSURE SENSOR
    3.
    发明申请
    SENSOR, STRAIN SENSOR, AND PRESSURE SENSOR 有权
    传感器,应变传感器和压力传感器

    公开(公告)号:US20160069755A1

    公开(公告)日:2016-03-10

    申请号:US14842273

    申请日:2015-09-01

    CPC classification number: G01L1/18 G01D11/30 G01L1/26 G01L19/0092 G01L19/04

    Abstract: A sensor includes a first structure that is attachable to a measurement specimen, a second structure that is made of material which is smaller in thermal expansion coefficient than the first structure, a bottom surface of the second structure being connected to the first structure, and a detector that is connected to an upper surface of the second structure, the detector being configured to detect a deformation of the second structure.

    Abstract translation: 传感器包括可附接到测量样本的第一结构,由与第一结构相比热膨胀系数小的材料制成的第二结构,第二结构的底表面连接到第一结构,以及 检测器,其连接到第二结构的上表面,检测器被配置为检测第二结构的变形。

    CURRENT-TO-VOLTAGE CONVERSION CIRCUIT AND SELF-OSCILLATION CIRCUIT
    4.
    发明申请
    CURRENT-TO-VOLTAGE CONVERSION CIRCUIT AND SELF-OSCILLATION CIRCUIT 审中-公开
    电流 - 电压转换电路和自振荡电路

    公开(公告)号:US20150341018A1

    公开(公告)日:2015-11-26

    申请号:US14717046

    申请日:2015-05-20

    CPC classification number: H03K3/01 G01C19/5776 H02J4/00 H03B5/30 Y10T307/658

    Abstract: A current-to-voltage conversion circuit according to one aspect of the present invention includes a first resistor, a first current source, a first capacitor, a first output terminal, a first voltage source, a first transistor, and a second resistor. The first resistor includes a first end and a second end. The first end of the first resistor is connectable to an electrode included in a sensor and the second end of the first resistor is connected to a first electrical potential. The first capacitor includes a first end and a second end. The first end of the first capacitor is connected to the first end of the first resistor and the second end of the first capacitor is connected to the first current source. The first transistor includes a first terminal, a second terminal, and a control terminal. The first terminal is connected to the second end of the first capacitor, the second terminal is connected to the first output terminal, and the control terminal is connected to the first voltage source. The second resistor includes a first end connected to the second terminal and a second end connected to a second electrical potential.

    Abstract translation: 根据本发明的一个方面的电流 - 电压转换电路包括第一电阻器,第一电流源,第一电容器,第一输出端子,第一电压源,第一晶体管和第二电阻器。 第一电阻器包括第一端和第二端。 第一电阻器的第一端可连接到包括在传感器中的电极,并且第一电阻器的第二端连接到第一电位。 第一电容器包括第一端和第二端。 第一电容器的第一端连接到第一电阻器的第一端,第一电容器的第二端连接到第一电流源。 第一晶体管包括第一端子,第二端子和控制端子。 第一端子连接到第一电容器的第二端,第二端子连接到第一输出端子,并且控制端子连接到第一电压源。 第二电阻器包括连接到第二端子的第一端和连接到第二电位的第二端。

    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER
    5.
    发明申请
    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER 有权
    共振传感器及其制造方法,以及谐振传感器的多层结构

    公开(公告)号:US20150042208A1

    公开(公告)日:2015-02-12

    申请号:US14446602

    申请日:2014-07-30

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole over the resonator, a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole, and a third layer covering the first layer and the second layer, and the third layer sealing the gap.

    Abstract translation: 谐振换能器包括硅单晶衬底,设置在硅单晶衬底上的硅单晶谐振器,由硅构成的外壳,围绕谐振器间隙,并与硅单晶衬底一起形成腔室,令人兴奋的 模块,其被配置为激励所述谐振器;振动检测模块,被配置为检测所述谐振器的振动;第一层,设置在所述腔室上,所述第一层在所述谐振器上方具有通孔;第二层,设置在所述第一层上, 所述间隙覆盖位于所述通孔的上方且与所述通孔连通的间隙,以及覆盖所述第一层和所述第二层的第三层,所述第三层密封所述间隙。

    METHOD OF MANUFACTURING RESONANT TRANSDUCER
    6.
    发明申请
    METHOD OF MANUFACTURING RESONANT TRANSDUCER 有权
    制造谐振传感器的方法

    公开(公告)号:US20130139377A1

    公开(公告)日:2013-06-06

    申请号:US13689199

    申请日:2012-11-29

    Abstract: A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.

    Abstract translation: 一种制造具有振动束的谐振换能器的方法包括:(a)提供SOI衬底,包括:第一硅层; 第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; (b)通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层,形成通过第二硅层的第一间隙和第二间隙; (c)在第二硅层上形成杂质扩散源层; (d)在第二硅层的表面部分形成杂质扩散层; (e)通过蚀刻去除杂质扩散源层; 以及(f)通过蚀刻去除所述氧化硅层的至少一部分,使得在所述第一硅层和由所述第一和第二间隙包围的所述第二硅层的区域之间形成气隙。

    RESONANT PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:US20220120627A1

    公开(公告)日:2022-04-21

    申请号:US17566326

    申请日:2021-12-30

    Abstract: A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER
    8.
    发明申请
    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER 有权
    共振传感器及其制造方法,以及谐振传感器的多层结构

    公开(公告)号:US20150028434A1

    公开(公告)日:2015-01-29

    申请号:US14336613

    申请日:2014-07-21

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.

    Abstract translation: 谐振换能器包括硅单晶衬底,设置在硅单晶衬底上的硅单晶谐振器,由硅构成的外壳,围绕谐振器间隙,并与硅单晶衬底一起形成腔室,令人兴奋的 模块,其被配置为激励所述谐振器;振动检测模块,被配置为检测所述谐振器的振动,设置在所述腔室上的第一层,所述第一层具有通孔,设置在所述第一层上的第二层, 第一层和第二层,以及从第二层朝向谐振器延伸的突起,突起与谐振器在空间上分离,突起与第一层隔开第一间隙,第二层与第一层分离 通过第二间隙,第一间隙与第二间隙连通。

    RESONANT TRANSDUCER AND MANUFACTURING METHOD OF RESONANT TRANSDUCER
    9.
    发明申请
    RESONANT TRANSDUCER AND MANUFACTURING METHOD OF RESONANT TRANSDUCER 有权
    谐振传感器的谐振传感器和制造方法

    公开(公告)号:US20140197712A1

    公开(公告)日:2014-07-17

    申请号:US14153325

    申请日:2014-01-13

    CPC classification number: H02N11/00 H03H3/0072 H03H9/2463 Y10T29/49007

    Abstract: A resonant transducer includes a resonator, a resonator electrodes connected to an end part of the resonator, at least one fixed electrode arranged in the vicinity of the resonator, and a buried part formed between the fixed electrode and the resonator electrode. The resonator, the resonator electrodes and the fixed electrode are formed by the same active layer on a substrate.

    Abstract translation: 谐振换能器包括谐振器,连接到谐振器的端部的谐振器电极,布置在谐振器附近的至少一个固定电极,以及形成在固定电极和谐振器电极之间的掩埋部分。 谐振器,谐振器电极和固定电极由衬底上相同的有源层形成。

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