公开(公告)号：US4223328A

公开(公告)日：1980-09-16

申请号：US911311

申请日：1978-06-01

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

IPC分类号： H01L29/80 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L29/744 ,  H01L29/0834 ,  H01L29/1066 ,  H01L29/167

摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.

摘要翻译： 公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域， 连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。 栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。 基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高 到基地区。 场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

公开(公告)号：US4354121A

公开(公告)日：1982-10-12

申请号：US284794

申请日：1981-07-10

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L27/08 ,  H01L29/739 ,  H02M1/08 ,  H03K17/04 ,  H03K17/12 ,  H03K17/72 ,  H03K17/73 ,  H03K17/60

CPC分类号： H01L29/7392 ,  H01L27/0817 ,  H02M1/08 ,  H03K17/0406 ,  H03K17/125 ,  H03K17/72

摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.

摘要翻译： 开关控制电路包括具有栅极和阴极的第一场控制晶闸​​管，在其间串联连接反向偏置电压源和第二场控制晶闸​​管。 通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸​​管的导通。 通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

公开(公告)号：US4514747A

公开(公告)日：1985-04-30

申请号：US357594

申请日：1982-03-12

申请人： Kenji Miyata ,  Yoshio Terasawa ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura

发明人： Kenji Miyata ,  Yoshio Terasawa ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/744 ,  H01L29/74

CPC分类号： H01L29/744 ,  H01L29/0834 ,  H01L29/1066

摘要： Disclosed is a field controlled thyristor in which a first semiconductor region of N.sup.+ -type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N.sup.- -type and a fifth semiconductor region of P.sup.+ -type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage. Also disclosed is a method for forming the third semiconductor regions and the surface-exposed semiconductor regions through a diffusion process alone.

摘要翻译： 公开了一种场控晶闸管，其中N +型的第一半导体区域，N型的第二半导体区域，P型的第三半导体区域，N型的第四半导体区域和P + 型形成在具有两个主表面的半导体衬底中，第一，第二和第三半导体区域暴露在第一主表面中，第五半导体区域暴露在第二主表面中; 并且P型的第三半导体区域彼此隔开预定间隔。 第三半导体区域与暴露在第一主表面中的暴露表面的半导体区域连接。 第二半导体区域中的杂质浓度从第一半导体区域朝向第三半导体区域减小，从而可以实现高反向阻断电压的低正向压降。 还公开了通过单独的扩散处理形成第三半导体区域和表面暴露的半导体区域的方法。

公开(公告)号：US4210464A

公开(公告)日：1980-07-01

申请号：US873774

申请日：1978-01-31

申请人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

发明人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

IPC分类号： H01L29/73 ,  H01L21/26 ,  H01L21/263 ,  H01L21/322 ,  H01L21/331 ,  H01L21/56 ,  H01L23/31 ,  H01L29/74 ,  H01L29/861 ,  C03C3/04

CPC分类号： H01L24/01 ,  H01L21/26 ,  H01L21/263 ,  H01L21/56 ,  H01L23/3171 ,  H01L23/3178 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/3025

摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.

摘要翻译： 以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度 超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。

公开(公告)号：US4016593A

公开(公告)日：1977-04-05

申请号：US583406

申请日：1975-06-03

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111

CPC分类号： H01L31/0203 ,  H01L31/1113

摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.

摘要翻译： 双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层 一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置 。

公开(公告)号：US4079405A

公开(公告)日：1978-03-14

申请号：US589675

申请日：1975-06-24

申请人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

发明人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

IPC分类号： H01L31/00 ,  H01L31/06 ,  H01L29/48

CPC分类号： H01L31/00 ,  H01L31/06 ,  Y02E10/50

摘要： A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.

摘要翻译： 一种半导体光电检测器，包括具有N型导电性的第一半导体层; 具有N型导电性的第二半导体层，设置在所述第一半导体层附近并具有比所述第一半导体层的电阻率高的电阻率; 具有P型导电性的第三区域，设置在所述第二半导体层附近，并且具有比所述第二半导体层的厚度小的厚度; 与第一半导体层保持欧姆接触的第一主电极; 以及与第三区域的一部分欧姆接触的第二主电极，第三区域的表面用作光接收表面。

公开(公告)号：US3943550A

公开(公告)日：1976-03-09

申请号：US534373

申请日：1974-12-19

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L31/111 ,  H01L29/74

CPC分类号： H01L31/1113

摘要： A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.

摘要翻译： 公开了一种包括四层PNPN的光激活半导体控制整流器件，其中形成在中间P型层和中间N型层之间的PN结的边缘的一部分暴露在同一侧上， 暴露外部P型层，使得在PN结的边缘的暴露部分上照射触发信号。

公开(公告)号：US4040084A

公开(公告)日：1977-08-02

申请号：US610786

申请日：1975-09-05

申请人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Takuzo Ogawa ,  Yutaka Misawa

发明人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Takuzo Ogawa ,  Yutaka Misawa

IPC分类号： H01L29/73 ,  H01L21/00 ,  H01L21/329 ,  H01L21/331 ,  H01L29/00 ,  H01L29/06 ,  H01L29/74 ,  H01L29/34 ,  H01L29/72

CPC分类号： H01L29/00 ,  H01L21/00 ,  H01L29/06

摘要： A semiconductor device having a high blocking voltage, comprises a pair of principal surfaces opposite to each other, a circular groove cut in the peripheral portion of one of the principal surfaces and a PN junction formed along the surface of the groove and the one of the principal surfaces, wherein the region on the side of the PN junction near the one of the principal surfaces is of high impurity concentration, the outer edge of the PN junction appears in the bevel surface connecting the pair of principal surfaces, and the edge of the PN junction intersects the bevel surface in such a manner that the angle therebetween in the region of high impurity concentration is obtuse.

公开(公告)号：US4682199A

公开(公告)日：1987-07-21

申请号：US489505

申请日：1983-04-28

申请人： Tsutomu Yatsuo ,  Naohiro Momma ,  Masayoshi Naito ,  Masahiro Okamura

发明人： Tsutomu Yatsuo ,  Naohiro Momma ,  Masayoshi Naito ,  Masahiro Okamura

IPC分类号： H01L29/10 ,  H01L29/74

CPC分类号： H01L29/7428 ,  H01L29/102

摘要： In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8.times.10.sup.15 atoms/cm.sup.3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/.quadrature.. The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.

摘要翻译： 在包括具有相邻pnpn四层的半导体本体和相对的阳极和阴极电极以及为半导体本体提供的栅电极的高压晶闸管中，杂质浓度高于另一半导体的p基极和n基区中的一个 在一个基极区域和相邻的发射极区域之间的结的附近具有不大于8×10 15原子/ cm 3的杂质浓度，并且朝向另一个连续的基极区域具有逐渐降低的梯度。 一个基本区域的薄层电阻为500至1500欧姆/平方厘米。 可以确保高电压，大直径和大电流晶闸管的实现。

公开(公告)号：US4388635A

公开(公告)日：1983-06-14

申请号：US164946

申请日：1980-07-01

申请人： Atsuo Watanabe ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Masahiro Okamura

发明人： Atsuo Watanabe ,  Masayoshi Naito ,  Tsutomu Yatsuo ,  Masahiro Okamura

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/74

CPC分类号： H01L29/408 ,  H01L29/0638 ,  H01L29/0661

摘要： A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.

摘要翻译： 高击穿电压半导体器件的新颖结构具有一对主表面，其上形成有一对主电极，并且在一对主表面之间形成有PN结被暴露的侧表面覆盖的PN结 钝化材料。 提供了一种导电构件的辅助电极，其设置在半导体衬底的主表面的外围边缘的外侧，并与钝化材料接触并与主电极电连接。 当在一对主电极之间施加用于反向偏置PN结的电压时，通过在钝化材料中建立的电场来收集钝化材料中的离子，从而防止半导体衬底的表面上的击穿劣化 。