公开(公告)号：US4040084A

公开(公告)日：1977-08-02

申请号：US610786

申请日：1975-09-05

申请人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Takuzo Ogawa ,  Yutaka Misawa

发明人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Takuzo Ogawa ,  Yutaka Misawa

IPC分类号： H01L29/73 ,  H01L21/00 ,  H01L21/329 ,  H01L21/331 ,  H01L29/00 ,  H01L29/06 ,  H01L29/74 ,  H01L29/34 ,  H01L29/72

CPC分类号： H01L29/00 ,  H01L21/00 ,  H01L29/06

摘要： A semiconductor device having a high blocking voltage, comprises a pair of principal surfaces opposite to each other, a circular groove cut in the peripheral portion of one of the principal surfaces and a PN junction formed along the surface of the groove and the one of the principal surfaces, wherein the region on the side of the PN junction near the one of the principal surfaces is of high impurity concentration, the outer edge of the PN junction appears in the bevel surface connecting the pair of principal surfaces, and the edge of the PN junction intersects the bevel surface in such a manner that the angle therebetween in the region of high impurity concentration is obtuse.

公开(公告)号：US4210464A

公开(公告)日：1980-07-01

申请号：US873774

申请日：1978-01-31

申请人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

发明人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

IPC分类号： H01L29/73 ,  H01L21/26 ,  H01L21/263 ,  H01L21/322 ,  H01L21/331 ,  H01L21/56 ,  H01L23/31 ,  H01L29/74 ,  H01L29/861 ,  C03C3/04

CPC分类号： H01L24/01 ,  H01L21/26 ,  H01L21/263 ,  H01L21/56 ,  H01L23/3171 ,  H01L23/3178 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/3025

摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.

摘要翻译： 以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度 超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。

公开(公告)号：US4193826A

公开(公告)日：1980-03-18

申请号：US931399

申请日：1978-08-07

申请人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yasumichi Yasuda ,  Yutaka Misawa ,  Takuzo Ogawa

发明人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yasumichi Yasuda ,  Yutaka Misawa ,  Takuzo Ogawa

IPC分类号： H01L21/223 ,  H01L21/28

CPC分类号： H01L21/223

摘要： A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 10.sup.17 atoms/cm.sup.3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.

摘要翻译： 一种制造半导体器件的方法，该方法通过加热其中设置有硅衬底和铝源的密封管将铝蒸气选择性地扩散到硅衬底中。 扩散是用小于约1017原子/ cm3的低浓度铝进行的，从而可以使用氧化硅膜作为扩散掩模，用于在硅衬底的预定区域选择性扩散铝。

公开(公告)号：US4079405A

公开(公告)日：1978-03-14

申请号：US589675

申请日：1975-06-24

申请人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

发明人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

IPC分类号： H01L31/00 ,  H01L31/06 ,  H01L29/48

CPC分类号： H01L31/00 ,  H01L31/06 ,  Y02E10/50

摘要： A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.

摘要翻译： 一种半导体光电检测器，包括具有N型导电性的第一半导体层; 具有N型导电性的第二半导体层，设置在所述第一半导体层附近并具有比所述第一半导体层的电阻率高的电阻率; 具有P型导电性的第三区域，设置在所述第二半导体层附近，并且具有比所述第二半导体层的厚度小的厚度; 与第一半导体层保持欧姆接触的第一主电极; 以及与第三区域的一部分欧姆接触的第二主电极，第三区域的表面用作光接收表面。

公开(公告)号：US3943550A

公开(公告)日：1976-03-09

申请号：US534373

申请日：1974-12-19

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L31/111 ,  H01L29/74

CPC分类号： H01L31/1113

摘要： A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.

摘要翻译： 公开了一种包括四层PNPN的光激活半导体控制整流器件，其中形成在中间P型层和中间N型层之间的PN结的边缘的一部分暴露在同一侧上， 暴露外部P型层，使得在PN结的边缘的暴露部分上照射触发信号。

公开(公告)号：US4223328A

公开(公告)日：1980-09-16

申请号：US911311

申请日：1978-06-01

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

IPC分类号： H01L29/80 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L29/744 ,  H01L29/0834 ,  H01L29/1066 ,  H01L29/167

摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.

摘要翻译： 公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域， 连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。 栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。 基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高 到基地区。 场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

公开(公告)号：US4354121A

公开(公告)日：1982-10-12

申请号：US284794

申请日：1981-07-10

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L27/08 ,  H01L29/739 ,  H02M1/08 ,  H03K17/04 ,  H03K17/12 ,  H03K17/72 ,  H03K17/73 ,  H03K17/60

CPC分类号： H01L29/7392 ,  H01L27/0817 ,  H02M1/08 ,  H03K17/0406 ,  H03K17/125 ,  H03K17/72

摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.

摘要翻译： 开关控制电路包括具有栅极和阴极的第一场控制晶闸​​管，在其间串联连接反向偏置电压源和第二场控制晶闸​​管。 通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸​​管的导通。 通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

公开(公告)号：US4016593A

公开(公告)日：1977-04-05

申请号：US583406

申请日：1975-06-03

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111

CPC分类号： H01L31/0203 ,  H01L31/1113

摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.

摘要翻译： 双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层 一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置 。

公开(公告)号：US3967308A

公开(公告)日：1976-06-29

申请号：US451679

申请日：1974-03-15

申请人： Tsutomu Yatsuo ,  Tatsuya Kamei ,  Takuzo Ogawa ,  Tomoyuki Tanaka

发明人： Tsutomu Yatsuo ,  Tatsuya Kamei ,  Takuzo Ogawa ,  Tomoyuki Tanaka

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/74 ,  H01L29/747

CPC分类号： H01L29/747 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/42308 ,  H01L29/74

摘要： A thyristor with a gate electrode formed on the side of an anode electrode. An auxiliary region of a large lateral resistance is formed in a surface layer of the substrate between the anode and gate electrodes.

摘要翻译： 具有形成在阳极侧的栅电极的晶闸管。 在阳极和栅电极之间的衬底的表面层中形成有大的横向电阻的辅助区域。

公开(公告)号：US4290830A

公开(公告)日：1981-09-22

申请号：US85234

申请日：1979-10-16

申请人： Yasuhiro Mochizuki ,  Sadao Okano ,  Takuzo Ogawa

发明人： Yasuhiro Mochizuki ,  Sadao Okano ,  Takuzo Ogawa

IPC分类号： C30B31/02 ,  H01L21/225

CPC分类号： C30B31/02 ,  H01L21/2254 ,  Y10S148/012 ,  Y10S148/015 ,  Y10S148/028 ,  Y10S148/033 ,  Y10S438/92

摘要： A method of diffusing selectively aluminium into a single crystal silicon semiconductor substrate for fabricating a semiconductor device comprises the steps of forming a diffusion source layer of aluminium having a predetermined thickness on at least one of the major surfaces of the substrate in a predetermined pattern, forming an oxide film of a predetermined thickness through oxidation over the surface of the diffusion source layer and the exposed surface of the substrate, and heating the substrate inclusive of the exposed surface thereof and the diffusion source layer thereby to diffuse aluminium into the substrate. The thickness of the oxide film is so selected as to suppress vaporization of the aluminium and at the same time to be used as a diffusion mask without giving rise to crystallization into a cristobalite structure. The method allows the pattern of boundary between the diffused regions and non-diffused regions as well as concentration profile of the diffused region to be controlled in a desired manner with a high accuracy.

摘要翻译： 选择性地将铝扩散到用于制造半导体器件的单晶硅半导体衬底中的方法包括以下步骤：以预定图案在衬底的至少一个主表面上形成具有预定厚度的铝的扩散源层，形成 通过在扩散源层的表面和基板的暴露表面上的氧化形成预定厚度的氧化膜，并且加热包括其暴露表面的基板和扩散源层，从而将铝扩散到基板中。 氧化膜的厚度被选择为抑制铝的蒸发，同时用作扩散掩模，而不会导致结晶成方英石结构。 该方法允许扩散区域和非扩散区域之间的边界图案以及扩散区域的浓度分布以期望的方式以高精度被控制。