公开(公告)号：US4354121A

公开(公告)日：1982-10-12

申请号：US284794

申请日：1981-07-10

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L27/08 ,  H01L29/739 ,  H02M1/08 ,  H03K17/04 ,  H03K17/12 ,  H03K17/72 ,  H03K17/73 ,  H03K17/60

CPC分类号： H01L29/7392 ,  H01L27/0817 ,  H02M1/08 ,  H03K17/0406 ,  H03K17/125 ,  H03K17/72

摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.

摘要翻译： 开关控制电路包括具有栅极和阴极的第一场控制晶闸​​管，在其间串联连接反向偏置电压源和第二场控制晶闸​​管。 通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸​​管的导通。 通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

公开(公告)号：US4514747A

公开(公告)日：1985-04-30

申请号：US357594

申请日：1982-03-12

申请人： Kenji Miyata ,  Yoshio Terasawa ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura

发明人： Kenji Miyata ,  Yoshio Terasawa ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/744 ,  H01L29/74

CPC分类号： H01L29/744 ,  H01L29/0834 ,  H01L29/1066

摘要： Disclosed is a field controlled thyristor in which a first semiconductor region of N.sup.+ -type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N.sup.- -type and a fifth semiconductor region of P.sup.+ -type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage. Also disclosed is a method for forming the third semiconductor regions and the surface-exposed semiconductor regions through a diffusion process alone.

摘要翻译： 公开了一种场控晶闸管，其中N +型的第一半导体区域，N型的第二半导体区域，P型的第三半导体区域，N型的第四半导体区域和P + 型形成在具有两个主表面的半导体衬底中，第一，第二和第三半导体区域暴露在第一主表面中，第五半导体区域暴露在第二主表面中; 并且P型的第三半导体区域彼此隔开预定间隔。 第三半导体区域与暴露在第一主表面中的暴露表面的半导体区域连接。 第二半导体区域中的杂质浓度从第一半导体区域朝向第三半导体区域减小，从而可以实现高反向阻断电压的低正向压降。 还公开了通过单独的扩散处理形成第三半导体区域和表面暴露的半导体区域的方法。

公开(公告)号：US4223328A

公开(公告)日：1980-09-16

申请号：US911311

申请日：1978-06-01

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

IPC分类号： H01L29/80 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L29/744 ,  H01L29/0834 ,  H01L29/1066 ,  H01L29/167

摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.

摘要翻译： 公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域， 连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。 栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。 基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高 到基地区。 场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

公开(公告)号：US4164436A

公开(公告)日：1979-08-14

申请号：US925792

申请日：1978-07-18

申请人： Mitsuru Ura ,  Kenji Miyata ,  Takaya Suzuki ,  Takuzo Ogawa

发明人： Mitsuru Ura ,  Kenji Miyata ,  Takaya Suzuki ,  Takuzo Ogawa

IPC分类号： H01L21/22 ,  H01L21/205 ,  H01L21/225 ,  H01L29/04 ,  H01L29/08 ,  H01L29/866

CPC分类号： H01L29/866 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/2257 ,  H01L29/04 ,  H01L29/0834 ,  Y10S148/122 ,  Y10S438/983

摘要： A semiconductor substrate having a single crystal semiconductor layer of one conductivity type exposed to the surface thereof is maintained at a temperature lower than the temperature at which the semiconductors is precipitated from the gas phase. In this state, a gas of a starting material of a semiconductor, a gas containing impurities capable of forming a semiconductor of the other conductivity type and a carrier gas therefore are fed onto the semiconductor substrate. Then, the semiconductor substrate is heated to form an amorphous or polycrystalline semiconductor layer of the other conductivity type on the semiconductor substrate. Simultaneously, the impurities of the other conductivity type are diffused from the amorphous or polycrystal semiconductor layer into the substrate which has a single crystal semiconductor layer of one conductivity type, to form a single crystal semiconductor layer having a p-n junction just below the amorphous or polycrystal semiconductor layer between the amorphous or polycrystalline semiconductor layer and the single crystal semiconductor layer of one conductivity type.In a p-n junction to be formed according to this process, the distribution of the concentration of impurities can be controlled precisely, and the step-like distribution of the concentration of impurities can be attained very well.

摘要翻译： 具有暴露于其表面的一种导电类型的单晶半导体层的半导体衬底保持在比从气相中半导体析出的温度低的温度。 在这种状态下，半导体衬底上的半导体原料气体，含能够形成其它导电类型的半导体的气体和载气的气体被馈送到半导体衬底上。 然后，半导体衬底被加热以在半导体衬底上形成另一导电类型的非晶或多晶半导体层。 同时，其他导电类型的杂质从非晶或多晶半导体层扩散到具有一种导电类型的单晶半导体层的衬底中，以形成具有刚好在无定形或多晶的下面的pn结的单晶半导体层 非晶或多晶半导体层与一种导电类型的单晶半导体层之间的半导体层。

公开(公告)号：US5153702A

公开(公告)日：1992-10-06

申请号：US203935

申请日：1988-06-08

申请人： Takashi Aoyama ,  Nobutake Konishi ,  Takaya Suzuki ,  Kenji Miyata ,  Saburo Oikawa ,  Yoshiaki Okajima ,  Genshiro Kawachi ,  Eimi Adachi

发明人： Takashi Aoyama ,  Nobutake Konishi ,  Takaya Suzuki ,  Kenji Miyata ,  Saburo Oikawa ,  Yoshiaki Okajima ,  Genshiro Kawachi ,  Eimi Adachi

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L27/1229 ,  H01L29/045 ,  H01L29/78675 ,  G02F1/1368 ,  G02F2202/104

摘要： This invention relates to a thin film semiconductor device and a method for fabricating it, and more particularly a thin film semiconductor device suitably applicable to a display device in an active matrix system and a method for fabricating it. In this invention, the structure of a thin film semiconductor device for improving the characteristic thereof and particularly the structure relative to the dominant orientation of a poly-Si film as an active layer of a thin film transistor (TFT) is disclosed. A method for fabricating a thin film semiconductor device which is capable of forming a poly-Si film at a relatively low process temperature is disclosed. Further, a display device in an active matrix system which provided high performance and high image quality is disclosed. The poly-Si film having a dominant orientation of (111) is formed by forming a poly-Si film on the semiconductor substrate at a temperature up to 570.degree. C. and annealing the substrate at a temperature up to 640.degree. C.

摘要翻译： 本发明涉及一种薄膜半导体器件及其制造方法，更具体地说，涉及适用于有源矩阵系统中的显示装置的薄膜半导体器件及其制造方法。 在本发明中，公开了用于改善其特性的薄膜半导体器件的结构，特别是关于作为薄膜晶体管（TFT）的有源层的多晶硅膜的主导方向的结构。 公开了一种能够在较低处理温度下形成多晶硅薄膜的薄膜半导体器件的制造方法。 此外，公开了提供高性能和高图像质量的有源矩阵系统中的显示装置。 通过在半导体衬底上在高达570℃的温度下形成多晶硅膜，并在高达640℃的温度下对衬底进行退火，形成具有（111）主导取向性的多晶硅膜。

公开(公告)号：US4146906A

公开(公告)日：1979-03-27

申请号：US762128

申请日：1977-01-24

申请人： Kenji Miyata ,  Mitsuru Ura ,  Takuzo Ogawa

发明人： Kenji Miyata ,  Mitsuru Ura ,  Takuzo Ogawa

IPC分类号： H01L29/73 ,  H01L21/225 ,  H01L21/331 ,  H01L29/04 ,  H01L29/74 ,  H01L29/861

CPC分类号： H01L29/861 ,  H01L21/2257 ,  H01L29/04 ,  H01L29/74 ,  Y10S148/122

摘要： A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of the polycrystalline layer closer to the above-mentioned one layer of the diode being higher than that of the other polycrystalline layer.

公开(公告)号：US4258377A

公开(公告)日：1981-03-24

申请号：US19567

申请日：1979-03-12

申请人： Kenji Miyata ,  Tatsuya Kamei ,  Masahiro Okamura

发明人： Kenji Miyata ,  Tatsuya Kamei ,  Masahiro Okamura

IPC分类号： H01L29/10 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L29/102 ,  H01L29/7436 ,  H01L29/744

摘要： An improvement in a semiconductor switching device is disclosed which comprises a semiconductor substrate of a first conductivity type, an anode region of a second conductivity type formed in the semiconductor substrate adjacent to a major surface thereof, a gate region of the second conductivity type formed a distance from the anode region, and a cathode region of the first conductivity type formed in the gate region and having a higher impurity concentration than the semiconductor substrate. A channel region is formed immediately below the cathode region thereby to directly contact the cathode region to the semiconductor substrate. A current path extending from the anode region to the cathode region through the semiconductor substrate is interrupted by a depletion layer produced in the vicinity of the channel region upon application of a reverse bias across a pn-junction formed between the gate region and the cathode region. When no reverse bias voltage is applied, the anode region, the semiconductor substrate and the gate region cooperate to function as a thyristor. The semiconductor switching device has a high dv/dt capability and is easily implemented in integrated circuits.

摘要翻译： 公开了一种半导体开关器件的改进，其包括第一导电类型的半导体衬底，形成在与其主表面相邻的半导体衬底中的第二导电类型的阳极区域，第二导电类型的栅极区形成为 与阳极区域的距离以及形成在栅极区域中并且具有比半导体衬底更高的杂质浓度的第一导电类型的阴极区域。 沟道区形成在阴极区的正下方，从而直接接触阴极区到半导体衬底。 通过在栅极区域和阴极区域之间形成的pn结上施加反向偏压，在由沟道区域附近产生的耗尽层将中断通过半导体衬底从阳极区延伸到阴极区的电流路径 。 当不施加反向偏置电压时，阳极区域，半导体衬底和栅极区域配合作为晶闸管。 半导体开关器件具有高的dv / dt能力，并且易于在集成电路中实现。

公开(公告)号：US4649990A

公开(公告)日：1987-03-17

申请号：US730642

申请日：1985-05-06

申请人： Yasutoshi Kurihara ,  Tasao Soga ,  Hiroaki Hachino ,  Kenji Miyata ,  Masahiro Okamura ,  Fumiyuki Kobayashi ,  Takahiro Daikoku

发明人： Yasutoshi Kurihara ,  Tasao Soga ,  Hiroaki Hachino ,  Kenji Miyata ,  Masahiro Okamura ,  Fumiyuki Kobayashi ,  Takahiro Daikoku

IPC分类号： H01L23/373 ,  H01L23/433 ,  F28F7/00

CPC分类号： H01L23/3731 ,  H01L23/4338 ,  H01L2224/16225

摘要： A heat-conducting cooling module for cooling a semiconductor substrate in an integrated circuit package assembly in which a semiconductor substrate is mounted on a base board by small solder pellets, and which contains a single substrate or laminated substrates. A heat-conducting relay member is provided between the semiconductor substrate and a housing so as to be pressed onto the semiconductor substrate. At least either one of the housing or the heat-conducting relay member is made of a sintered product which includes silicon carbide as a chief component.

摘要翻译： 一种用于冷却集成电路封装组件中的半导体衬底的导热冷却模块，其中通过小的焊料颗粒将半导体衬底安装在基板上，并且其包含单个衬底或层压衬底。 导热继电器件设置在半导体衬底和壳体之间，以便被压在半导体衬底上。 壳体或导热继电器构件中的至少一个由包括碳化硅作为主要成分的烧结产品制成。

公开(公告)号：US08471428B2

公开(公告)日：2013-06-25

申请号：US12846432

申请日：2010-07-29

申请人： Takashi Naganawa ,  Kenji Miyata ,  Takashi Ishigami ,  Yoshihisa Ishikawa

发明人： Takashi Naganawa ,  Kenji Miyata ,  Takashi Ishigami ,  Yoshihisa Ishikawa

IPC分类号： H02K3/28

CPC分类号： H02K3/28 ,  H02K19/34

摘要： A rotating electrical machine includes a rotor, in which a plurality of magnetic poles are provided in circumferential direction, and a stator, within which the rotor is disposed. In the stator, two stator magnetic poles are formed by winding coils of one phase and by a stator core of the stator within 360° of electrical angle defined by the magnetic poles of the rotor. The coils that form respective stator magnetic poles have angular widths in circumferential direction of less than 180° of electrical angle, the coils that form the respective two stator magnetic poles are provided so as not to mutually overlap and are wound so that adjacent ones of the stator magnetic poles have mutually opposite polarities, and, in the stator, each winding of each coil consists of an external bridge wire, a turn portion, an internal bridge wire, and a turn portion, in that order.

摘要翻译： 旋转电机包括在圆周方向上设置有多个磁极的转子和设置转子的定子。 在定子中，两个定子磁极通过将一个相的线圈和定子的定子铁芯缠绕在由转子的磁极限定的电角度的360°内而形成。 形成各个定子磁极的线圈的圆周方向的角度宽度小于电角度的180°，形成相应的两个定子磁极的线圈被设置为不相互重叠并缠绕，使得相邻的 定子磁极具有相互相反的极性，并且在定子中，每个线圈的每个绕组按顺序由外部桥接线，匝部分，内部桥接线和匝部组成。

公开(公告)号：US07830060B2

公开(公告)日：2010-11-09

申请号：US12393676

申请日：2009-02-26

申请人： Kenji Miyata ,  Yoshihisa Ishikawa

发明人： Kenji Miyata ,  Yoshihisa Ishikawa

IPC分类号： H02K1/00

CPC分类号： H02K3/28 ,  H02K19/12 ,  H02K19/22

摘要： An electric motor comprising a rotor having plural magnetic poles in the circumferential direction; and a stator whose teeth are disposed opposite to the periphery of the rotor, with an air gap interposed between the rotor and the stator, wherein the coil conductors are wound on the stator so that two stator magnetic poles may be formed by two coil units of a phase wound around stator teeth within the range of 360 electrical degrees subtended by the magnetic poles of the rotor; each of the two coil units forming the stator magnetic poles spans an electrical angle less than 180 electrical degrees; the two coil turns forming the two stator magnetic poles are laid out so that they may not overlap each other; and the coil conductors are so wound that the adjacent stator magnetic poles exhibit opposite magnetic polarities.

摘要翻译： 一种电动机，包括：沿圆周方向具有多个磁极的转子; 以及定子，其齿与所述转子的周边相对配置，在所述转子和所述定子之间插入气隙，所述线圈导体缠绕在所述定子上，使得两个定子磁极可以由两个线圈单元形成 在由转子的磁极对着的360度的范围内的绕定子齿缠绕的相; 形成定子磁极的两个线圈单元中的每一个跨越小于180电度的电角度; 形成两个定子磁极的两个线圈圈布置成使得它们可以不重叠; 并且线圈导体被缠绕，使得相邻的定子磁极呈现相反的磁极性。