公开(公告)号：US4354121A

公开(公告)日：1982-10-12

申请号：US284794

申请日：1981-07-10

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Saburo Oikawa ,  Susumu Murakami ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L27/08 ,  H01L29/739 ,  H02M1/08 ,  H03K17/04 ,  H03K17/12 ,  H03K17/72 ,  H03K17/73 ,  H03K17/60

CPC分类号： H01L29/7392 ,  H01L27/0817 ,  H02M1/08 ,  H03K17/0406 ,  H03K17/125 ,  H03K17/72

摘要： A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.

摘要翻译： 开关控制电路包括具有栅极和阴极的第一场控制晶闸​​管，在其间串联连接反向偏置电压源和第二场控制晶闸​​管。 通过控制施加在栅极和阴极两端的电压来控制第二场控晶闸管的导通，从而控制第一场控制晶闸​​管的导通。 通过相对较小的控制电流或电压可以正确安全地打开和关闭大负载电流。

公开(公告)号：US4223328A

公开(公告)日：1980-09-16

申请号：US911311

申请日：1978-06-01

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

IPC分类号： H01L29/80 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L29/744 ,  H01L29/0834 ,  H01L29/1066 ,  H01L29/167

摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.

摘要翻译： 公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域， 连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。 栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。 基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高 到基地区。 场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

公开(公告)号：US4079405A

公开(公告)日：1978-03-14

申请号：US589675

申请日：1975-06-24

申请人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

发明人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

IPC分类号： H01L31/00 ,  H01L31/06 ,  H01L29/48

CPC分类号： H01L31/00 ,  H01L31/06 ,  Y02E10/50

摘要： A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.

摘要翻译： 一种半导体光电检测器，包括具有N型导电性的第一半导体层; 具有N型导电性的第二半导体层，设置在所述第一半导体层附近并具有比所述第一半导体层的电阻率高的电阻率; 具有P型导电性的第三区域，设置在所述第二半导体层附近，并且具有比所述第二半导体层的厚度小的厚度; 与第一半导体层保持欧姆接触的第一主电极; 以及与第三区域的一部分欧姆接触的第二主电极，第三区域的表面用作光接收表面。

公开(公告)号：US3943550A

公开(公告)日：1976-03-09

申请号：US534373

申请日：1974-12-19

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L31/111 ,  H01L29/74

CPC分类号： H01L31/1113

摘要： A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.

摘要翻译： 公开了一种包括四层PNPN的光激活半导体控制整流器件，其中形成在中间P型层和中间N型层之间的PN结的边缘的一部分暴露在同一侧上， 暴露外部P型层，使得在PN结的边缘的暴露部分上照射触发信号。

公开(公告)号：US4210464A

公开(公告)日：1980-07-01

申请号：US873774

申请日：1978-01-31

申请人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

发明人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

IPC分类号： H01L29/73 ,  H01L21/26 ,  H01L21/263 ,  H01L21/322 ,  H01L21/331 ,  H01L21/56 ,  H01L23/31 ,  H01L29/74 ,  H01L29/861 ,  C03C3/04

CPC分类号： H01L24/01 ,  H01L21/26 ,  H01L21/263 ,  H01L21/56 ,  H01L23/3171 ,  H01L23/3178 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/3025

摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.

摘要翻译： 以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度 超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。

公开(公告)号：US4136351A

公开(公告)日：1979-01-23

申请号：US792002

申请日：1977-04-28

申请人： Yoshitaka Sugawara ,  Tatsuya Kamei ,  Susumu Murakami ,  Tadahiko Miyoshi ,  Takuzo Ogawa

发明人： Yoshitaka Sugawara ,  Tatsuya Kamei ,  Susumu Murakami ,  Tadahiko Miyoshi ,  Takuzo Ogawa

IPC分类号： H01L23/48 ,  H01L31/12 ,  H01L31/167

CPC分类号： H01L31/167 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/83385 ,  H01L2924/01322 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/15787 ,  H01L2924/19103 ,  H01L2924/351

摘要： A photo-coupled semiconductor device comprising a light-emitting semiconductor element, a light-receiving semiconductor element, and an insulation base supporting these two semiconductor elements. The insulation base has a pair of parallel surfaces and provides an optical path extending between the parallel surfaces for photo-coupling the semiconductor elements. Each of the semiconductor elements has at least two rigid electrodes extending in parallel to the parallel surfaces of the insulation base, and the electrodes are electrically and mechanically connected at one of their parallel surfaces by solder to conductive interconnection layers exposed at predetermined positions of one of the parallel surfaces of the insulation base. The device can satisfy both the desired increase in the efficiency of photo-coupling and the desired improvement in the massproductivity.

公开(公告)号：US4016593A

公开(公告)日：1977-04-05

申请号：US583406

申请日：1975-06-03

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111

CPC分类号： H01L31/0203 ,  H01L31/1113

摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.

摘要翻译： 双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层 一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置 。

公开(公告)号：US4040084A

公开(公告)日：1977-08-02

申请号：US610786

申请日：1975-09-05

申请人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Takuzo Ogawa ,  Yutaka Misawa

发明人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Takuzo Ogawa ,  Yutaka Misawa

IPC分类号： H01L29/73 ,  H01L21/00 ,  H01L21/329 ,  H01L21/331 ,  H01L29/00 ,  H01L29/06 ,  H01L29/74 ,  H01L29/34 ,  H01L29/72

CPC分类号： H01L29/00 ,  H01L21/00 ,  H01L29/06

摘要： A semiconductor device having a high blocking voltage, comprises a pair of principal surfaces opposite to each other, a circular groove cut in the peripheral portion of one of the principal surfaces and a PN junction formed along the surface of the groove and the one of the principal surfaces, wherein the region on the side of the PN junction near the one of the principal surfaces is of high impurity concentration, the outer edge of the PN junction appears in the bevel surface connecting the pair of principal surfaces, and the edge of the PN junction intersects the bevel surface in such a manner that the angle therebetween in the region of high impurity concentration is obtuse.

公开(公告)号：US4146906A

公开(公告)日：1979-03-27

申请号：US762128

申请日：1977-01-24

申请人： Kenji Miyata ,  Mitsuru Ura ,  Takuzo Ogawa

发明人： Kenji Miyata ,  Mitsuru Ura ,  Takuzo Ogawa

IPC分类号： H01L29/73 ,  H01L21/225 ,  H01L21/331 ,  H01L29/04 ,  H01L29/74 ,  H01L29/861

CPC分类号： H01L29/861 ,  H01L21/2257 ,  H01L29/04 ,  H01L29/74 ,  Y10S148/122

摘要： A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of the polycrystalline layer closer to the above-mentioned one layer of the diode being higher than that of the other polycrystalline layer.

公开(公告)号：US4164436A

公开(公告)日：1979-08-14

申请号：US925792

申请日：1978-07-18

申请人： Mitsuru Ura ,  Kenji Miyata ,  Takaya Suzuki ,  Takuzo Ogawa

发明人： Mitsuru Ura ,  Kenji Miyata ,  Takaya Suzuki ,  Takuzo Ogawa

IPC分类号： H01L21/22 ,  H01L21/205 ,  H01L21/225 ,  H01L29/04 ,  H01L29/08 ,  H01L29/866

CPC分类号： H01L29/866 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/2257 ,  H01L29/04 ,  H01L29/0834 ,  Y10S148/122 ,  Y10S438/983

摘要： A semiconductor substrate having a single crystal semiconductor layer of one conductivity type exposed to the surface thereof is maintained at a temperature lower than the temperature at which the semiconductors is precipitated from the gas phase. In this state, a gas of a starting material of a semiconductor, a gas containing impurities capable of forming a semiconductor of the other conductivity type and a carrier gas therefore are fed onto the semiconductor substrate. Then, the semiconductor substrate is heated to form an amorphous or polycrystalline semiconductor layer of the other conductivity type on the semiconductor substrate. Simultaneously, the impurities of the other conductivity type are diffused from the amorphous or polycrystal semiconductor layer into the substrate which has a single crystal semiconductor layer of one conductivity type, to form a single crystal semiconductor layer having a p-n junction just below the amorphous or polycrystal semiconductor layer between the amorphous or polycrystalline semiconductor layer and the single crystal semiconductor layer of one conductivity type.In a p-n junction to be formed according to this process, the distribution of the concentration of impurities can be controlled precisely, and the step-like distribution of the concentration of impurities can be attained very well.

摘要翻译： 具有暴露于其表面的一种导电类型的单晶半导体层的半导体衬底保持在比从气相中半导体析出的温度低的温度。 在这种状态下，半导体衬底上的半导体原料气体，含能够形成其它导电类型的半导体的气体和载气的气体被馈送到半导体衬底上。 然后，半导体衬底被加热以在半导体衬底上形成另一导电类型的非晶或多晶半导体层。 同时，其他导电类型的杂质从非晶或多晶半导体层扩散到具有一种导电类型的单晶半导体层的衬底中，以形成具有刚好在无定形或多晶的下面的pn结的单晶半导体层 非晶或多晶半导体层与一种导电类型的单晶半导体层之间的半导体层。