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    Semiconductor light emitting devices
    4.
    发明授权
    Semiconductor light emitting devices 有权
    半导体发光器件

    公开(公告)号：US06847057B1

    公开(公告)日：2005-01-25

    申请号：US10633058

    申请日：2003-08-01

    申请人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

    发明人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

    IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/0004 ,  H01L33/22

    摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

    摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

    Semiconductor light emitting devices with graded composition light emitting layers
    5.
    发明授权
    Semiconductor light emitting devices with graded composition light emitting layers 有权
    具有渐变成分发光层的半导体发光器件

    公开(公告)号：US07122839B2

    公开(公告)日：2006-10-17

    申请号：US10977867

    申请日：2004-10-29

    申请人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L27/15

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3205 ,  H01S5/34333

    摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.

    摘要翻译： 半导体发光器件中的III族氮化物发光层具有渐变组成。 发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。 在发光层中的分级可以减少与发光层中的极化场相关的问题。 发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

    Heterostructures for III-nitride light emitting devices
    6.
    发明授权
    Heterostructures for III-nitride light emitting devices 有权
    III族氮化物发光器件的异质结构

    公开(公告)号：US06995389B2

    公开(公告)日：2006-02-07

    申请号：US10465775

    申请日：2003-06-18

    申请人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

    发明人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

    IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/3425 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34346

    摘要： Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.

    摘要翻译： 公开了异质结构设计，其可以增加III族氮化物发光器件（例如发光二极管）的有源区的量子阱层中可用的电荷载体的数量。 在第一实施例中，存储层包括在发光器件的有源区中的势垒层和量子阱层。 在一些实施例中，储存层比阻挡层和量子阱层厚，并且具有比阻挡层更大的铟组成和比量子阱层更小的铟组成。 在一些实施例中，储层被分级。 在第二实施例中，发光器件的有源区是交替的量子阱层和阻挡层的超晶格。 在一些实施例中，阻挡层是薄的，使得电荷载流子可以通过势垒层在量子阱层之间隧穿。

    Reverse polarization light emitting region for a semiconductor light emitting device
    7.
    发明授权
    Reverse polarization light emitting region for a semiconductor light emitting device 有权
    用于半导体发光器件的反向偏振发光区域

    公开(公告)号：US07221000B2

    公开(公告)日：2007-05-22

    申请号：US11226185

    申请日：2005-09-13

    申请人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Yu-Chen Shen ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L29/22

    CPC分类号： H01L33/32 ,  H01L33/16

    摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.

    摘要翻译： 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。 发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层​​。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

    Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
    9.
    发明授权
    Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same 有权
    形成半导体材料的弛豫层，半导体结构，器件和包括其的工程衬底的方法

    公开(公告)号：US08486771B2

    公开(公告)日：2013-07-16

    申请号：US12563953

    申请日：2009-09-21

    申请人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02639 ,  H01L21/02367 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254

    摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

    摘要翻译： 制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。 在沉积第二层半导体材料期间，柔性材料可以回流。 可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。 在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。 还公开了制造半导体结构和器件的方法。 在这种方法中形成了新的中间结构。 工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。