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    Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
    3.
    发明授权
    Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same 有权
    形成半导体材料的弛豫层，半导体结构，器件和包括其的工程衬底的方法

    公开(公告)号：US08486771B2

    公开(公告)日：2013-07-16

    申请号：US12563953

    申请日：2009-09-21

    申请人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Bruce Faure ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02639 ,  H01L21/02367 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254

    摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

    摘要翻译： 制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。 在沉积第二层半导体材料期间，柔性材料可以回流。 可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。 在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。 还公开了制造半导体结构和器件的方法。 在这种方法中形成了新的中间结构。 工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

    RELAXATION OF STRAINED LAYERS
    6.
    发明申请
    RELAXATION OF STRAINED LAYERS 有权
    应变层的松弛

    公开(公告)号：US20120214291A1

    公开(公告)日：2012-08-23

    申请号：US13458587

    申请日：2012-04-27

    申请人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    IPC分类号： H01L21/762

    CPC分类号： H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

    摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.

    摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。

    Relaxation of strained layers
    7.
    发明授权
    Relaxation of strained layers 有权
    应变层的松弛

    公开(公告)号：US08481408B2

    公开(公告)日：2013-07-09

    申请号：US13458587

    申请日：2012-04-27

    申请人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    IPC分类号： H01L21/30

    CPC分类号： H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

    摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.

    摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。

    Grown photonic crystals in semiconductor light emitting devices
    10.
    发明授权
    Grown photonic crystals in semiconductor light emitting devices 有权
    半导体发光器件中的生长光子晶体

    公开(公告)号：US08163575B2

    公开(公告)日：2012-04-24

    申请号：US11156105

    申请日：2005-06-17

    申请人： Jonathan J. Wierer, Jr. ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Jonathan J. Wierer, Jr. ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L21/00

    CPC分类号： C30B29/60 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/34333

    摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

    摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。