Abstract:
A solution to an interference effect problem associated with laser processing of target structures entails adjusting laser pulse energy or other laser beam parameter, such as laser pulse temporal shape, based on light reflection information of the target structure and passivation layers stacked across a wafer surface or among multiple wafers in a group of wafers. Laser beam reflection measurements on a target link measurement structure and in a neighboring passivation layer area unoccupied by a link enable calculation of the laser pulse energy adjustment for a more consistent processing result without causing damage to the wafer. For thin film trimming on a wafer, similar reflection measurement information of the laser beam incident on the thin film structure and the passivation layer structure with no thin film present can also deliver the needed information for laser parameter selection to ensure better processing quality.
Abstract:
Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.
Abstract:
A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
Abstract:
A method of and an apparatus for drilling blind vias with selectable tapers in multilayer electronic circuits permit forming electrical connections between layers while maintaining quality and throughput. The method relies on recognizing that the top diameter of the via and the bottom diameter of the via, which define the taper, are functions of two separate sets of equations. Simultaneous solution of these equations yields a solution space that enables optimization of throughput while maintaining selected taper and quality using temporally unmodified Q-switched CO2 laser pulses with identical pulse parameters. Real time pulse tailoring is not required; therefore, system complexity and cost may be reduced.
Abstract:
A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic or ceramic-like substrate such that a portion of the thickness of the substrate is removed. The UV laser beam forms a scribe line in the substrate without appreciable substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the substrate. Consequently, multiple depthwise cracks propagate into the thickness of the substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean fracture of the substrate into separate circuit components. The formation of this region facilitates higher precision fracture of the substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.
Abstract:
A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
Abstract:
A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
Abstract:
A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
Abstract:
A laser (126) and an AOM (10) are pulsed at substantially regular and substantially similar constant high repetition rates to provide working laser outputs (40) with variable nonimpingement intervals (50) without sacrificing laser pulse-to-pulse energy stability. When a working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in coincidence with the laser output (24) to transmit it to a target. When no working laser output (40) is demanded, an RF pulse (38) is applied to the AOM (10) in noncoincidence with the laser output (24) so it gets blocked. So the average thermal loading on the AOM (10) remains substantially constant regardless of how randomly the working laser outputs (40) are demanded. The AOM (10) can also be used to control the energy of the working laser output (40) by controlling the power of the RF pulse (38) applied. When the RF power is changed, the RF duration (44) of the RF pulse (38) is modified to maintain the constant average RF power. Consistent loading on the AOM (10) eliminates deterioration of laser beam quality and laser beam pointing accuracy associated with thermal loading variation on the AOM (10) and is advantageous for applications such as IC chip link processing where stable working laser outputs (40) with variable output intervals (50) are needed.
Abstract:
A laser beam (102) cuts through a component carrier mask (96) made of thin elastomeric material such as silicone rubber to form slots (98) having slot openings of a desired shape. In a preferred embodiment, a light absorptivity enhancement material such as iron oxide introduced into the silicone rubber causes formation of a flexible support blank that operationally adequately absorbs light within a light absorption wavelength range. A beam positioner (106) receiving commands from a programmed controller causes a UV laser beam of a wavelength that is within the light absorption wavelength range to cut into the mask multiple slots with repeatable, precise dimensions. Each of the slots cut has opposed side margins that define between them a slot opening of suitable shape to receive a miniature component (10) and to exert on it optimal holding and release forces.