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    Methods for coating a substrate with an amphiphilic compound
    6.
    发明申请
    Methods for coating a substrate with an amphiphilic compound 有权
    用两亲性化合物涂覆底物的方法

    公开(公告)号：US20090014846A1

    公开(公告)日：2009-01-15

    申请号：US12172110

    申请日：2008-07-11

    申请人： Zachary M. Fresco ,  Chi-I Lang ,  Jinhong Tong ,  Anh Duong ,  Nitin Kumar ,  Anna Tsimelzon ,  Tony Chiang

    发明人： Zachary M. Fresco ,  Chi-I Lang ,  Jinhong Tong ,  Anh Duong ,  Nitin Kumar ,  Anna Tsimelzon ,  Tony Chiang

    IPC分类号： H01L21/312 ,  H01L29/51

    CPC分类号： H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

    摘要翻译： 提出了修改图案化半导体衬底的方法，包括：提供包括电介质区域和导电区域的图案化半导体衬底表面; 以及将两亲表面改性剂施加到所述电介质区域以改变所述电介质区域。 在一些实施例中，修改电介质区域包括改变电介质区域的润湿角度。 在一些实施例中，改变润湿角度包括使介电区域的表面成为亲水性。 在一些实施方案中，方法还包括将水溶液施加到图案化的半导体衬底表面。 在一些实施例中，导电区域被水溶液选择性地增强。 在一些实施例中，方法还包括提供由低k电介质材料形成的电介质区域。 在一些实施方案中，施加两亲表面改性剂修饰低k电介质区域与随后工艺的相互作用。

    Methods for treating substrates in preparation for subsequent processes
    7.
    发明授权
    Methods for treating substrates in preparation for subsequent processes 有权
    处理底物的方法用于后续方法的制备

    公开(公告)号：US07884036B1

    公开(公告)日：2011-02-08

    申请号：US11777152

    申请日：2007-07-12

    申请人： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

    发明人： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

    IPC分类号： H01L21/00

    CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76849

    摘要： Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.

    摘要翻译： 呈现用于处理衬底以用于后续工艺的方法，所述方法包括：接收衬底，所述衬底包括导电区域和电介质区域; 以及以使得电介质区域被氧化以变得越来越亲水的方式将氧化剂施加到衬底上，以便能够在随后的工艺中进入导电区域，其中将电介质区域处理到大约1至 5个原子层。 在一些实施例中，方法还包括处理衬底，其中选择性地增强对导电区域的处理。 在一些实施方案中，氧化剂包括大气压等离子体和UV辐射。

    Composition and method to remove excess material during manufacturing of semiconductor devices
    9.
    发明授权
    Composition and method to remove excess material during manufacturing of semiconductor devices 有权
    在制造半导体器件期间去除多余材料的组合物和方法

    公开(公告)号：US08894774B2

    公开(公告)日：2014-11-25

    申请号：US13094967

    申请日：2011-04-27

    申请人： Anh Duong

    发明人： Anh Duong

    IPC分类号： C11D7/32 ,  C11D7/26 ,  C11D7/34 ,  C11D7/50 ,  H01L21/285 ,  H01L21/02

    CPC分类号： C11D7/3209 ,  C11D7/263 ,  C11D7/3218 ,  C11D7/34 ,  C11D7/5013 ,  C11D7/5022 ,  H01L21/02068 ,  H01L21/28518

    摘要： A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.

    摘要翻译： 在制造半导体器件期间除去多余材料的物质组成和方法包括提供衬底; 将金属螯合剂混合物施加到基底上，其中金属螯合剂混合物包含金属螯合剂和溶剂，其中金属螯合剂与铂残基结合，使铂残基可溶; 并从底物上冲洗金属螯合剂混合物以从硅化物中除去铂残基。