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    Method of forming first order transition films
    4.
    发明授权
    Method of forming first order transition films 失效
    形成一阶转换膜的方法

    公开(公告)号：US3741823A

    公开(公告)日：1973-06-26

    申请号：US3741823D

    申请日：1970-10-26

    申请人： GEN ELECTRIC

    发明人： LOMMEL J

    IPC分类号： G11B13/04 ,  H01F10/32 ,  H01F1/02

    CPC分类号： B82Y25/00 ,  G11B13/045 ,  H01F10/002 ,  H01F10/325

    摘要： THIN FILMS OF ION-RHODIUM EXHIBITING A BROADLY HYSTERIC FIRST ORDER TRANSISTION BETWEEN THE FERROMAGNETIC AND ANTIFERROMAGNETIC STATES ARE PRODUCED BY SEQUENTIALLY DEPOSITING IRON AND RHODIUM FILMS UPON A REFRACTORY SUBSTRATE AT A PRESSURE IN THE RANGE OF 1X10**-6 TORR, ANNEALING THE STRUCTURE IN A VACUUM OF 1X10**-6 TORR AT A TEMPERATURE OF APPROXIMATELY 700* C. FOR 1 HOUR TO PRODUCE A COMPLETE DIFFUSION OF THE IRON AND RHODIUM LAYERS, AND SUBSEQUENTLY SUBJECTING THE DIFFUSED LAYERS TO A SECOND ANNEAL IN AN ATMOSPHERE GREATER THAN 10 PARTS PER MILLION OXYGEN IN A THERMAL CYCLE THAT INCLUDES SLOWLY HEATING THE STRUCTURE TO 400* C., MAINTAINING THE 400* C. FOR APPROXIMATELY 10 MINUTES AND SLOWLY COOLING TO ROOM TEMPERATURE. FILMS THUS FORMED ARE ADVANTAGEOUSLY EMPOLYED IN THE RECORDING OF DIGITAL INFORMATION BY ELECTRON BEAM HEATING INDIVIDUAL REGIONS THROUGH A FIRST ORDER TRANSISTION TO THE FERROMAGNETIC STATE WHEREUPON THE REGIONS ARE PERMITTED TO COOL TO A BIASING TEMPERATURE SLIGHTLY HIGHER THAN THE TEMPERATURE OF TRANSISTION BACK TO AN ANTIFEROMAGNETIC STATE. A MAGNETIC FIELD THEN IS APPLIED TO THE ENTIRE FILM TO MAGNETIZE ONLY THOSE REGIONS OF THE FILM IN THE FERROMAGNETIC STATE AND READOUT OF THE RECORDED INFORMATION CAN BE ACHIEVED BY CONVENTIONAL ELECTRON BEAM MICROSCOPY. THE FERROMAGNETISM OF THE FILM SUBSEQUENTLY CAN BE ERASED BY COOLING THE FILM BELOW THE TRANSISTION TEMPERATURE TO THE ANTIFERROMAGNETIC STATE OR BY THE APPLICATION OF A STRAIN TO THE FILM.

    Method of manufacturing magnetic dots
    6.
    发明授权
    Method of manufacturing magnetic dots 有权
    制造磁点的方法

    公开(公告)号：US08790526B2

    公开(公告)日：2014-07-29

    申请号：US13835397

    申请日：2013-03-15

    申请人： Seagate Technology, LLC

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

    IPC分类号： G11B5/855

    CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  H01F10/002 ,  H01L21/02112 ,  H01L29/82 ,  Y10T428/115

    摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

    摘要翻译： 提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。 壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。 因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

    Memory device
    7.
    发明申请
    Memory device 审中-公开
    内存设备

    公开(公告)号：US20140169084A1

    公开(公告)日：2014-06-19

    申请号：US14099174

    申请日：2013-12-06

    申请人： HITACHI, LTD.

    发明人： Joerg WUNDERLICH ,  Xavier MARTI ,  Tomas JUNGWIRTH

    IPC分类号： H01L43/02 ,  G11C11/16

    CPC分类号： H01L43/02 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/002 ,  H01F10/3218 ,  H01L43/08

    摘要： A memory device is described. The memory device comprises an antiferromagnet. The device may comprise an insulator and an electrode arranged in a tunnel junction configuration. Alternatively, the device may comprise first and second contacts to the antiferromagnet for measuring ohmic resistance of the antiferromagnet. The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments in the antiferromagnet, applying an external magnetic field and then cooling the antiferromagnet to a temperature below the critical temperature.

    摘要翻译： 描述存储器件。 存储器件包括反铁磁体。 该器件可以包括布置成隧道结构造的绝缘体和电极。 或者，该装置可以包括用于测量反铁磁体的欧姆电阻的反铁磁体的第一和第二接触。 反铁磁体不与任何铁磁体耦合。 反铁磁体的状态可以通过将接合点加热到等于或高于临界温度的温度来设定，在该温度下可以重新定向反铁磁体中的磁矩，施加外部磁场，然后将反铁磁体冷却到低于 临界温度。

    PROCESS FOR FABRICATING A LAYER OF AN ANTIFERROMAGNETIC MATERIAL WITH CONTROLLED MAGNETIC STRUCTURES
    8.
    发明申请
    PROCESS FOR FABRICATING A LAYER OF AN ANTIFERROMAGNETIC MATERIAL WITH CONTROLLED MAGNETIC STRUCTURES 审中-公开
    用控制磁性结构制备抗病毒材料层的方法

    公开(公告)号：US20110236704A1

    公开(公告)日：2011-09-29

    申请号：US13128721

    申请日：2009-10-13

    申请人： Antoine Barbier ,  Odile Bezencenet ,  Daniel Bonamy

    发明人： Antoine Barbier ,  Odile Bezencenet ,  Daniel Bonamy

    IPC分类号： H01F10/00 ,  B05D3/00 ,  B32B9/00

    CPC分类号： H01F41/32 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/002 ,  H01F41/14 ,  H01F41/302 ,  H01F41/303 ,  Y10T428/325

    摘要： A process for fabricating an antiferromagnetic layer includes depositing on a substrate a first layer with a sufficient thickness to establish a specific magnetic order from among one of the following orders, ferrimagnetic, ferromagnetic, paramagnetic, diamagnetic; after establishing the ferrimagnetic, ferromagnetic, paramagnetic or diamagnetic order, applying a magnetic field with sufficient amplitude and duration to shift walls of the magnetic domains of the first layer from a first statistical distribution to a second statistical distribution, the second statistical distribution presenting a minimum magnetic domain size strictly greater than the minimum magnetic domain size of the first statistical distribution and; for a given area, magnetic domains in which the perimeter is greater than that of domains from the first statistical distribution; and depositing on the first layer whose magnetic domain walls have been shifted, a second layer of an antiferromagnetic material in which at least one of the components of material of the first layer may be integrated by diffusion during growth.

    摘要翻译： 制造反铁磁性层的方法包括在基底上沉积足够厚度的第一层，以从以下顺序之一建立特定磁性顺序，亚铁磁性，铁磁性，顺磁性，抗磁性; 在建立铁磁性，铁磁性，顺磁性或抗磁性顺序之后，施加足够的幅度和持续时间的磁场将第一层的磁畴的壁从第一统计分布转移到第二统计分布，第二统计分布呈现最小值 磁畴尺寸严格大于最小磁畴尺寸的第一次统计分布; 对于给定区域，其周长大于来自第一统计分布的域的磁畴; 并且沉积在其磁畴壁已经移动的第一层上，第二层反铁磁性材料，其中第一层的材料的至少一种成分可通过生长期间的扩散而被整合。

    Growth of oxide exchange bias layers
    10.
    发明授权
    Growth of oxide exchange bias layers 失效
    氧化物交换偏压层的生长

    公开(公告)号：US5783262A

    公开(公告)日：1998-07-21

    申请号：US762087

    申请日：1996-12-09

    申请人： Alison Chaiken ,  Richard P. Michel

    发明人： Alison Chaiken ,  Richard P. Michel

    IPC分类号： C23C14/08 ,  C23C14/46 ,  G11B5/39 ,  H01F41/18 ,  H01F41/30

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/085 ,  C23C14/46 ,  H01F10/002 ,  H01F41/18 ,  H01F41/302 ,  G11B2005/3996 ,  G11B5/399

    摘要： An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

    摘要翻译： 通过在纯氩（Ar）溅射气体中的氧化物靶的离子束溅射产生的氧化物（NiO，CoO，NiCoO）反铁磁性交换偏压层，没有氧气引入到系统中。 反铁磁性氧化物层用于例如磁阻回读头以使铁磁膜的磁滞回线偏离零场轴。 例如，使用Ar离子的NiO靶的离子束溅射制造NiO交换层，衬底温度在200℃，离子束电压为1000V，束电流为20mA，沉积速率 约0.2安培/秒。 所得NiO膜是无定形的。