公开(公告)号：US4821081A

公开(公告)日：1989-04-11

申请号：US070623

申请日：1987-07-06

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L21/339 ,  H01L29/768 ,  H01L29/78 ,  G11C19/28

CPC分类号： H01L29/66954 ,  H01L29/768

摘要： A CCD structure wherein the patterned well implant and/or patterned barrier implant geometries are modified to exploit two dimensional potential modification effects to induce potential gradation along the length of the CCD pixel. Preferably these geometry modifications are in the form of wedge-shaped extensions of the well doping into the barrier region. The modifications thus induced to the potential profile for electrons in the direction of the charge transfer along the CCD pixel mean that the regions of flat potential, wherein carrier transport is diffusion dominated, are shortened, so that charge transfer efficiency can be improved at reasonably high clock rates.

摘要翻译： 修改其中图案化的阱注入和/或图案化的势垒注入几何形状的CCD结构，以利用二维电位修改效应来沿CCD像素的长度诱发电位灰度。 优选地，这些几何修改是阱掺杂到阻挡区域中的楔形延伸的形式。 因此，沿着CCD像素对电子沿电荷转移方向的电位分布的修正意味着其中载流子传输被扩散控制的平坦电位的区域被缩短，使得电荷转移效率可以在相当高的范围内提高 时钟频率。

公开(公告)号：US4819070A

公开(公告)日：1989-04-04

申请号：US37302

申请日：1987-04-10

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27/148 ,  H04N5/353 ,  H04N5/374 ,  H04N5/376 ,  H04N3/14

CPC分类号： H04N3/1562 ,  H04N3/1556

摘要： An image sensor array (12) is comprised of a plurality of sensor elements (60) arranged in rows (62) and columns (64). Each element (60) is operable to modulate an output voltage signal responsive to charge accumulating in its gate region (70) responsive to incident light. Circuitry (74, 84, 78, 72) is provided to obtain and store a signal that is related to a threshold voltage differential produced by the accumulated charge, and not to the intrinsic threshold voltages or sizes of sensors (60). The array (12) has automatic blooming control, and can exhibit electronic iris, zooming and panning functions.

摘要翻译： 图像传感器阵列（12）由布置成行（62）和列（64）的多个传感器元件（60）组成。 每个元件（60）可操作以响应于入射光而响应于在其栅极区域（70）中蓄积的电荷来调制输出电压信号。 提供电路（74,84,78,72）以获得和存储与由累积电荷产生的阈值电压差有关的信号，而不是传感器（60）的固有阈值电压或尺寸。 阵列（12）具有自动开机控制，可显示电子光圈，变焦和平移功能。

公开(公告)号：US4814648A

公开(公告)日：1989-03-21

申请号：US100668

申请日：1987-09-24

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H03K3/356 ,  H04N5/217 ,  H04N5/357 ,  H04N5/372 ,  H04N5/378 ,  H03K5/22 ,  H03K17/16

CPC分类号： H03K3/356095 ,  H03K3/356034 ,  H04N5/2173

摘要： A low 1/f noise amplifier has been provided for an output of a CCD imager. To reduce clock noise, the amplifier employs a differential detection scheme. Linear stages (54, 76) are coupled by capacitors (60, 82) to a differential amplifier (64). Differential amplifier (64) employs a first (112, 118) and a second (172, 198) differential transistor pair. The second differential pair (172, 198) is cross-coupled to the outputs of the first differential pair (112, 118) by load resistances (180, 206) with the voltage drop across them remaining substantially constant. To maintain stability, the positive and negative branches of the amplifier are periodically reset by a resetter (210). The input nodes (62, 86) are periodically reset to a voltage reference.

摘要翻译： 已经为CCD成像器的输出提供了低1 / f噪声放大器。 为了减少时钟噪声，放大器采用差分检测方案。 线性级（54,76）由电容器（60,82）耦合到差分放大器（64）。 差分放大器（64）采用第一（112,118）和第二（172,198）差分晶体管对。 第二差分对（172,198）通过负载电阻（180,206）与第一差分对（112,118）的输出交叉耦合，并且它们之间的电压降保持基本恒定。 为了保持稳定性，放大器的正和负分支由复位器（210）定期复位。 输入节点（62,86）周期性地复位到电压基准。

公开(公告)号：US4679212A

公开(公告)日：1987-07-07

申请号：US636425

申请日：1984-07-31

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： G11C19/28 ,  H01L27/14 ,  H01L27/148

CPC分类号： H01L27/14856 ,  G11C19/285 ,  H01L27/14887

摘要： The specification discloses a charge transfer imaging device (10) having a charge removal gate (26). Pulses (30) of sufficient amplitude and frequency are applied to gate (26) in order to remove charge from device (10) by electron-hole recombination through interface traps of electrons and holes. Pulses of one amplitude reduce blooming of the device when used as an imager, while pulses of a second amplitude may be used to produce imager aperture control and gamma correction. Further, the charge removal technique may be used to control charge injection device (96) operation.

摘要翻译： 该说明书公开了一种具有电荷去除栅极（26）的电荷转移成像装置（10）。 足够的幅度和频率的脉冲（30）被施加到栅极（26），以便通过电子和空穴的界面陷阱的电子 - 空穴复合从装置（10）去除电荷。 当用作成像器时，一个幅度的脉冲减小了器件的亮度，而第二幅度的脉冲可用于产生成像器孔径控制和伽马校正。 此外，电荷去除技术可以用于控制电荷注入装置（96）的操作。

公开(公告)号：US4599639A

公开(公告)日：1986-07-08

申请号：US590949

申请日：1984-03-19

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L23/60 ,  H01L29/78

CPC分类号： H01L23/60 ,  H01L2924/0002

摘要： Gates of individual devices on a slice are connected through a resistance to the device substrate, and through the same resistance to other device gates. This interconnection and high-resistance drain gives the gate protection from static charge buildup and subsequent catastrophic discharge which would result in a faulty device. This method protects each gate from the time of deposition to final device packaging.

摘要翻译： 片上单个器件的栅极通过电阻连接到器件衬底，并通过与其他器件栅极相同的电阻。 这种互连和高电阻漏极使栅极保护免受静电电荷积累和随后的灾难性放电，从而导致器件故障。 这种方法可以保护每个门从沉积时间到最终的设备包装。

公开(公告)号：US4577232A

公开(公告)日：1986-03-18

申请号：US646400

申请日：1984-08-31

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27/14 ,  H01L27/148 ,  H04N5/376 ,  H04N3/14

CPC分类号： H04N3/1575 ,  H01L27/14831 ,  H04N3/1525

摘要： This specification discloses a CCD imager which includes a line addressing circuit (24) which selectively addresses CCD imaging gates (48). Output signals are clocked under the gates (48) to a buffer register (30) which is constructed in the form of a tree. Signals from under each of the CCD gates (48) travel an identical length path through the buffer register (30) to a charge detection circuit (46) measured by the number of pixels involved. The output signals thus take the same time, or same number of clock pulses, to travel the length of the buffer register (30) to enable all line switching to be accomplished during the horizontal blanking time of a television thus eliminating the switching noise from the television screen.

摘要翻译： 本说明书公开了一种CCD成像器，其包括选择性地寻址CCD成像门（48）的行寻址电路（24）。 输出信号在门（48）下被计时到以树的形式构建的缓冲寄存器（30）。 来自每个CCD栅极（48）下面的信号通过缓冲寄存器（30）行进相同的长度路径到由所涉及的像素数量测量的电荷检测电路（46）。 因此，输出信号采取相同的时间或相同数量的时钟脉冲来移动缓冲寄存器（30）的长度，以使得能够在电视的水平消隐时间期间完成所有线路切换，从而消除了来自电视机的开关噪声 电视屏幕。

公开(公告)号：US4229752A

公开(公告)日：1980-10-21

申请号：US906385

申请日：1978-05-16

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L29/762 ,  G11C19/28 ,  G11C27/04 ,  H01L21/339 ,  H01L21/8234 ,  H01L27/148 ,  H01L29/423 ,  H01L29/76 ,  H01L29/768 ,  H01L29/772 ,  H01L29/78

CPC分类号： H01L29/66954 ,  G11C19/282 ,  G11C27/04 ,  H01L21/823406 ,  H01L27/148 ,  H01L29/42396 ,  H01L29/76833 ,  H01L29/76866

摘要： A uniphase, buried-channel, semiconductor charge transfer device wherein a portion of each cell includes an inversion layer, or "virtual electrode" at the semiconductor surface, shielding that region from any gate-induced change in potential. Each cell is comprised of four regions (I, II, III, IV) wherein the characteristic impurity profile of each region determines the maximum potential generated therein for the gate "on" and gate "off" conditions. Clocking the gate causes the potential maxima in regions I and II to cycle above and below the fixed potential maxima in regions III and IV beneath the virtual electrode. Directionality of charge transfer is thereby achieved, since the potential maximum for region II (.phi..sub.max II) remains greater than for region I (.phi..sub.max I) and .phi..sub.max IV>.phi..sub.max III, for both gate conditions. A self-aligned process for fabrication is provided, including a number of ion implant stages to fix the required impurity profiles in each cell for generating the correct potential profiles for charge propagation. CCD imagers, memory devices, an analog processors are contemplated systems wherein the invention is to be implemented.

摘要翻译： 一种单相埋入通道的半导体电荷转移装置，其中每个单元的一部分包括反型层或半导体表面处的“虚拟电极”，屏蔽该区域不受任何栅极引起的电位变化。 每个单元由四个区域（I，II，III，IV）组成，其中每个区域的特征杂质分布决定了栅极“导通”和栅极“关闭”条件下产生的最大电位。 对门进行时钟导致区域I和II中的电位最大值在虚拟电极下方的区域III和IV中的固定电位最大值之上和之下循环。 由此实现电荷转移的方向性，因为对于两个栅极条件，区域II（phi maxII）的电势最大值保持大于区域I（phi maxI）和phi maxIV> phi maxIII。 提供了一种用于制造的自对准工艺，其包括多个离子注入阶段，以在每个单元中固定所需的杂质分布，以产生用于电荷传播的正确的电位分布。 CCD成像器，存储器件，模拟处理器是其中将实现本发明的预期系统。

公开(公告)号：US4140814A

公开(公告)日：1979-02-20

申请号：US856445

申请日：1977-12-01

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： C23C16/40 ,  H01L21/283 ,  H01L27/148 ,  H01L31/18 ,  B05D3/06

CPC分类号： H01L27/148 ,  C23C16/407 ,  H01L21/283 ,  H01L31/1884 ,  Y02E10/50

摘要： A transparent conductive layer of SnO.sub.2 is deposited on a substrate by an RF-plasma assisted chemical vapor reaction of CO.sub.2 with an organic tin compound, such as tetramethyl tin, for example. A CCD optical imager is fabricated, using the method of the invention to form a transparent conductive layer thereon.

摘要翻译： 通过RF等离子体辅助的CO 2化学气相反应和例如四甲基锡等有机锡化合物将SnO 2的透明导电层沉积在基板上。 使用本发明的方法在其上形成透明导电层来制造CCD光学成像器。

公开(公告)号：US4023562A

公开(公告)日：1977-05-17

申请号：US609382

申请日：1975-09-02

申请人： Jaroslav Hynecek ,  Wen H. Ko ,  Eugene T. Yon

发明人： Jaroslav Hynecek ,  Wen H. Ko ,  Eugene T. Yon

IPC分类号： A61B5/03 ,  G01L9/00 ,  A61B5/02

CPC分类号： G01L19/0061 ,  A61B5/03 ,  G01L9/0054

摘要： A fluidtight, hermetically sealed, miniature transducer adapted to be inserted into the human body and useful for directly monitoring internal fluid or pneumatic pressures within the human body is disclosed. Semiconductor strain gauge elements constituting a piezoresistive bridge are formed by diffusion on the surface of one side of an integral flexible, rectangular, silicon diaphragm area of a single crystal silicon base. A single crystal silicon cover is eutectically bonded to the base by a metallic laminate seal. The base, cover, and seal define an evacuated fluidtight chamber containing the strain gauge elements. Electrical conductors, which include diffused conductor paths under an insulating oxide layer, extend from the piezoresistive bridge to contact pads outside the fluidtight chamber. The contact pads can be connected to a readout device for electrically measuring the pressure differential between the evacuated chamber and fluid external to the transducer as a function of time.

摘要翻译： 公开了一种易于密封的微型传感器，其适于插入人体内并且可用于直接监测人体内的内部流体或气动压力。 构成压阻电桥的半导体应变计元件通过在单晶硅基底的整体柔性矩形硅膜面积的一侧的表面上扩散而形成。 单晶硅覆盖层通过金属层压密封件与基体共晶结合。 基座，盖子和密封件限定了包含应变计元件的抽真空的流体密封室。 包括在绝缘氧化物层下面的扩散导体路径的电导体从压阻电桥延伸到液密室外的接触焊盘。 接触垫可以连接到读出装置，用于电气测量抽​​真空室与换能器外部的流体之间的压差作为时间的函数。

公开(公告)号：US08373781B2

公开(公告)日：2013-02-12

申请号：US12003316

申请日：2007-12-21

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H04N3/14

CPC分类号： H01L27/14605 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14656 ,  H01L31/035281 ,  H03K17/20 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/363 ,  H04N5/3741 ,  H04N5/3745

摘要： A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.

摘要翻译： 图像传感器的像素仅包括每像素两条信号线，用于感测光的钉扎光电二极管，浮动基极双极晶体管，以及无复位和地址晶体管。 浮置基极双极晶体管为像素提供增益，可以增加像素灵敏度并降低噪声。 该像素还包括用于高效起霜抑制的垂直起霜控制结构。 像素的输出端子耦合到由用于减少发射极漏电流的特殊电流感测相关双采样电路端接的公共列输出线。 基于这种结构，像素具有高灵敏度，高响应均匀性，低噪声，尺寸减小和布局有效。