公开(公告)号：US08313664B2

公开(公告)日：2012-11-20

申请号：US12623243

申请日：2009-11-20

Applicant: Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

Inventor： Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

IPC: G01L21/30

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3299 ,  H01L21/6833

Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.

Abstract translation: 在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压 。

公开(公告)号：US08237517B2

公开(公告)日：2012-08-07

申请号：US13205933

申请日：2011-08-09

Applicant: Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

Inventor： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

IPC: H03H7/38

CPC classification number: H03H7/38

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

公开(公告)号：US20120069174A1

公开(公告)日：2012-03-22

申请号：US13236039

申请日：2011-09-19

Applicant: Zheng John Ye ,  Kartik Ramaswamy ,  Troy S. Detrick ,  Kenneth S. Collins

Inventor： Zheng John Ye ,  Kartik Ramaswamy ,  Troy S. Detrick ,  Kenneth S. Collins

IPC: H04N7/18

CPC classification number: G01N25/72

Abstract: Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support.

Abstract translation: 本发明的实施例提供了用于分析复合结构内的接合材料的热性能的方法和装置。 本发明的一个实施例提供一种用于分析结构内的接合材料的热性能的装置。 该装置包括：结构支撑件，其具有构造成支撑该结构的支撑表面;热源，其构造成将热通量引导到由结构支撑件的支撑表面支撑的结构;以及面向支撑在结构支撑上的结构的照相机， 被配置为捕获支持在结构支撑上的结构的热图像。

公开(公告)号：US08076247B2

公开(公告)日：2011-12-13

申请号：US11733770

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

Abstract translation: 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

公开(公告)号：US08058156B2

公开(公告)日：2011-11-15

申请号：US10895784

申请日：2004-07-20

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: H01L21/425

CPC classification number: H01J37/32357 ,  C23C14/046 ,  C23C14/48 ,  C23C16/045 ,  H01J37/32412

Abstract: A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, the plural orifices oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the closest one of the plural ion shower grids, and furnishing the selected species into the ion generation region. The process further includes evacuating the process region, and applying plasma source power to generate a plasma of the selected species in the ion generation region. The process also includes applying successive grid potentials to successive ones of the grids and applying a bias potential to the workpiece. The combination of the grid and bias potentials corresponds to the desired ion implantation depth profile in the workpiece.

Abstract translation: 在具有一组多个并联离子淋浴网格的反应室中进行用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入方法，该多个平行离子淋浴网将腔室分成上部离子产生区域和下部 处理区域，每个离子淋浴栅格具有从栅格到栅格相互配准的多个孔，多个孔相对于各个离子喷淋栅格的表面平行于非平行方向。 该工艺包括将工件放置在工艺区域中，工件具有大致面对多个离子淋浴栅格中最接近的一个的表面的工件表面，并将所选择的物质提供到离子产生区域中。 该方法还包括抽空处理区域，以及施加等离子体源功率以在离子产生区域中产生所选物种的等离子体。 该过程还包括将连续的栅格电势施加到连续的栅格并向工件施加偏置电位。 栅格和偏置电位的组合对应于工件中期望的离子注入深度分布。

公开(公告)号：US20110256691A1

公开(公告)日：2011-10-20

申请号：US13168738

申请日：2011-06-24

Applicant: Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Biagio Gallo ,  Hiroji Hanawa ,  Majeed A. Foad ,  Martin A. Hilkene ,  Kartik Santhanam ,  Matthew D. Scotney-Castle

IPC: H01L21/322

CPC classification number: H01L21/2254 ,  H01L21/2253

Abstract: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

Abstract translation: 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

公开(公告)号：US08002945B2

公开(公告)日：2011-08-23

申请号：US12129024

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: C23F1/00

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32935

Abstract: A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.

Abstract translation: 提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。

公开(公告)号：US20110024047A1

公开(公告)日：2011-02-03

申请号：US12849012

申请日：2010-08-02

Applicant: Andrew NGUYEN ,  Wing Lau CHENG ,  Hiroji HANAWA ,  Semyon L. KATS ,  Kartik RAMASWAMY ,  Yan YE ,  Kwok Manus WONG ,  Daniel J. HOFFMAN ,  Tetsuya ISHIKAWA ,  Brian C. LUE

Inventor： Andrew NGUYEN ,  Wing Lau CHENG ,  Hiroji HANAWA ,  Semyon L. KATS ,  Kartik RAMASWAMY ,  Yan YE ,  Kwok Manus WONG ,  Daniel J. HOFFMAN ,  Tetsuya ISHIKAWA ,  Brian C. LUE

IPC: C23F1/08 ,  C23C16/00 ,  C23C16/458 ,  H01L21/683

CPC classification number: C23C14/564 ,  C23C16/4404 ,  H01J37/16 ,  H01J37/32504 ,  H01J37/32862 ,  H01J37/32871 ,  H01J2237/022 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T428/24 ,  Y10T428/31678

Abstract: A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.

Abstract translation: 用于衬底处理室的支撑件包括具有衬底接收表面的卡盘，以及包括上壁的基座，该上壁包括凹槽，所述凹槽具有（i）第一深度处的附接面，以及（ii）第二深度处的流体通道 。 下壁位于凹槽中并附着到上壁的附接面，以封闭流体通道。 提供流体入口以将传热流体供应到流体通道和设置用于从流体通道排出传热流体的流体出口。

公开(公告)号：US20100327873A1

公开(公告)日：2010-12-30

申请号：US12790682

申请日：2010-05-28

Applicant: Leonid A. Dorf ,  Shahid Rauf ,  Kartik Ramaswamy ,  Ken Collins

Inventor： Leonid A. Dorf ,  Shahid Rauf ,  Kartik Ramaswamy ,  Ken Collins

IPC: G01N27/62 ,  G01R27/08

CPC classification number: H01J37/3299 ,  H01J37/32935

Abstract: Described herein is a method and apparatus for diagnosing processing equipment with a multi-diagnostic device. In one embodiment, a multi-diagnostic device is located in a plasma processing environment and includes an electronic circuitry. The device includes a first array of sensors and a second array of sensors. The circuitry is used to simultaneously (or nearly simultaneously) measure the distributions of ion saturation current and the potential at the device using the first array of sensors and to measure resistances of the second array of sensors to determine the distribution of the temperature at the surface of the device.

Abstract translation: 这里描述了一种用于诊断具有多诊断装置的处理设备的方法和装置。 在一个实施例中，多诊断装置位于等离子体处理环境中，并且包括电子电路。 该装置包括第一传感器阵列和第二传感器阵列。 该电路用于同时（或几乎同时）测量离子饱和电流的分布和使用第一传感器阵列的器件上的电位，并测量第二阵列传感器的电阻以确定表面温度的分布 的设备。

公开(公告)号：US20100270262A1

公开(公告)日：2010-10-28

申请号：US12765855

申请日：2010-04-22

Applicant: Hiroji HANAWA ,  Kartik Ramaswamy

Inventor： Hiroji HANAWA ,  Kartik Ramaswamy

IPC: C23F1/02 ,  H01B13/00

CPC classification number: G03F7/427 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/31116 ,  H01L21/31138

Abstract: A method of etching a low-k dielectric on, or removing resist from, a substrate. In the method, the substrate is placed in a process zone. An ionized gas is generated in a gas ionization zone above the process zone, by introducing a process gas into a gas ionization zone, maintaining the process gas at a pressure of less than about 0.1 mTorr, and coupling RF energy to the process gas to form an ionized gas. The ionized gas is passed through an ion filter to form a filtered ionized gas. The substrate is exposed to the filtered ionized gas to etch the low-k dielectric layer on the substrate or to remove or clean remnant resist on the substrate.

Abstract translation: 蚀刻基底上的低k电介质或去除抗蚀剂的方法。 在该方法中，将基板放置在处理区中。 在工艺区域上方的气体离子化区域中产生电离气体，通过将工艺气体引入气体离子化区域，将工艺气体保持在小于约0.1mTorr的压力，并将RF能量耦合到工艺气体以形成 电离气体。 电离气体通过离子过滤器以形成过滤的电离气体。 将衬底暴露于经过滤的电离气体以蚀刻衬底上的低k电介质层或去除或清洁衬底上的残余抗蚀剂。