公开(公告)号：US20070148451A1

公开(公告)日：2007-06-28

申请号：US11550121

申请日：2006-10-17

申请人： Sung-ho PARK ,  Myoung-jae LEE ,  June-mo KOO ,  Bum-seok SEO

发明人： Sung-ho PARK ,  Myoung-jae LEE ,  June-mo KOO ,  Bum-seok SEO

IPC分类号： B32B9/00 ,  C23C16/00

CPC分类号： C23C16/26 ,  B82Y10/00 ,  B82Y30/00 ,  D01F9/127 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10T428/2918

摘要： A method of forming carbon fibers at a low temperature below 450° C. using an organic-metal evaporation method is provided. The method includes: heating a substrate and maintaining the substrate at a temperature of 200 to 450° C. after loading the substrate into a reaction chamber; preparing an organic-metal compound containing Ni; forming an organic-metal compound vapor by vaporizing the organic-metal compound; and forming carbon fibers on the substrate by facilitating a chemical reaction between the organic-metal compound vapor and a reaction gas containing ozone in the reaction chamber.

摘要翻译： 提供了使用有机金属蒸发法在低于450℃的低温下形成碳纤维的方法。 该方法包括：将基板加载到反应室中之后，加热基板并将基板保持在200至450℃的温度; 制备含有Ni的有机金属化合物; 通过蒸发有机金属化合物形成有机金属化合物蒸气; 以及通过促进有机金属化合物蒸气和在反应室中含有臭氧的反应气体之间的化学反应，在基板上形成碳纤维。

公开(公告)号：US20070090444A1

公开(公告)日：2007-04-26

申请号：US11584543

申请日：2006-10-23

申请人： Sang-Jin Park ,  Myoung-Jae Lee ,  Young-Kwan Cha ,  Sun-Ae Seo ,  Kyung-Sang Cho ,  Kwang-Soo Seol

发明人： Sang-Jin Park ,  Myoung-Jae Lee ,  Young-Kwan Cha ,  Sun-Ae Seo ,  Kyung-Sang Cho ,  Kwang-Soo Seol

IPC分类号： H01L29/76 ,  H01L21/8238

CPC分类号： H01L27/101 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1608

摘要： A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.

摘要翻译： 提供了包括纳米点的非易失性存储器件及其制造方法。 非易失性存储器件可以包括下电极，下电极上的氧化物层，氧化物层中的纳米点和氧化物层上的上电极。 在示例性实施例中，氧化物层内的电流路径可以是统一的，从而稳定复位电流。

公开(公告)号：US07196336B2

公开(公告)日：2007-03-27

申请号：US10556226

申请日：2004-04-26

申请人： Kyu Sun Chung ,  Yong Sup Choi ,  Myoung Jae Lee

发明人： Kyu Sun Chung ,  Yong Sup Choi ,  Myoung Jae Lee

IPC分类号： G21K1/08

CPC分类号： H05H1/2406 ,  H05H2001/2443

摘要： An apparatus for injecting plasma in the atmosphere is provided, including a plurality of dielectric panels (13a, 13b, 13c), and 13d, which are disposed in parallel at predetermined intervals, a gas supply portion (14), to which the dielectric panels (13a, 13b, 13c, and 13d) are fixed and which supplies a gas to spaces between the dielectric panels (13a and 13b), between the dielectric panels (13b and 13c), and between the dielectric panels (13c and 13d), power electrodes (15a, 15b, and 15c), which are linearly installed near the gas supply portion (14) and between the dielectric panels (13a and 13b, between the dielectric panels 13b and 13c, and between the dielectric panels 13c and 13d), respectively, ground electrodes (16a, 16b, 16c, and 16d), which are formed in the ends of the dielectric panels (13a, 13b, 13c, and 13d), respectively, and a high frequency generator (17), which applies high frequency power to the power electrodes (15a, 15b, and 15c) and the ground electrodes (16a, 16b, 16c, and 16d).

摘要翻译： 提供了一种用于在大气中注入等离子体的装置，包括以预定间隔平行设置的多个电介质面板（13a，13b，13c）和13d，气体供应部分（14），至 所述电介质面板（13a，13b，13c和13d）被固定并且在所述电介质面板（13b和13c）之间向所述电介质面板（13a和13b）之间的空间供应气体， ，并且在电介质面板（13c和13d）之间，电极电极（15a，15b和15c），线性地安装在气体供应部分（14）附近以及电介质面板（13a和13c）之间 b，在电介质面板13b和13c之间以及电介质面板13c和13d之间d）分别形成在接地电极（16a，16b，16c和16d）的端部 电介质面板（13a，13b，13c，13d）和高频发生器（17），其向功率电极（15A， 15b和15c）和接地电极（16a，16b，16c和16d）。

公开(公告)号：US20060193175A1

公开(公告)日：2006-08-31

申请号：US11354011

申请日：2006-02-15

申请人： Yoon-ho Khang ,  Eun-hye Lee ,  Myoung-jae Lee ,  Sun-ae Seo ,  Seung-Eon Ahn

发明人： Yoon-ho Khang ,  Eun-hye Lee ,  Myoung-jae Lee ,  Sun-ae Seo ,  Seung-Eon Ahn

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： H01L21/28282 ,  B82Y10/00 ,  G11C16/0416 ,  H01L29/51 ,  H01L29/513 ,  H01L29/792

摘要： The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a transition metal oxide (TMO) on the tunneling oxide, a blocking oxide film formed on the floating gate, a gate electrode formed on the blocking oxide film.

公开(公告)号：US20060131554A1

公开(公告)日：2006-06-22

申请号：US11312744

申请日：2005-12-21

申请人： Young-Soo Joung ,  Yoon-Dong Park ,  In-Kyeong Yoo ,  Myoung-Jae Lee ,  Sun-Ae Seo ,  Hye-Young Kim ,  Seung-Eon Ahn ,  David Seo

发明人： Young-Soo Joung ,  Yoon-Dong Park ,  In-Kyeong Yoo ,  Myoung-Jae Lee ,  Sun-Ae Seo ,  Hye-Young Kim ,  Seung-Eon Ahn ,  David Seo

IPC分类号： H01L29/02

CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/76 ,  G11C2213/77 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.

摘要翻译： 具有两个或多个电阻器的非易失性存储器件及其形成和使用方法。 具有两个电阻层的非易失性存储器件，更具体地说，涉及使用具有存储器开关特性的电阻层和具有阈值转换特性的电阻层形成和操作的非易失性存储器件。 非易失性半导体存储器件可以包括下电极; 具有形成在所述下电极上的至少两个电阻特性的第一电阻层，形成在所述第一电阻层上的阈值转换特性的第二电阻层和形成在所述第二电阻层上的上电极。

公开(公告)号：US20060109704A1

公开(公告)日：2006-05-25

申请号：US11267576

申请日：2005-11-07

申请人： Sun-Ae Seo ,  In-Kyeong Yoo ,  Yoon-Dong Park ,  Myoung-Jae Lee

发明人： Sun-Ae Seo ,  In-Kyeong Yoo ,  Yoon-Dong Park ,  Myoung-Jae Lee

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/79

摘要： A nonvolatile memory device and method that uses a resistor having various resistance states. The memory device may include a switching device and a resistor. The resistor may be electrically connected with the switching device and may have one reset resistance state and at least two or more set resistance states.

摘要翻译： 一种使用具有各种电阻状态的电阻器的非易失性存储器件和方法。 存储器件可以包括开关器件和电阻器。 电阻器可以与开关器件电连接，并且可以具有一个复位电阻状态和至少两个或多个设定的电阻状态。

公开(公告)号：US20060098472A1

公开(公告)日：2006-05-11

申请号：US11270459

申请日：2005-11-10

申请人： Seung-Eon Ahn ,  In-Kyeong Yoo ,  Young-Soo Joung ,  Young-Kwan Cha ,  Myoung-Jae Lee ,  David Seo ,  Sun-Ae Seo

发明人： Seung-Eon Ahn ,  In-Kyeong Yoo ,  Young-Soo Joung ,  Young-Kwan Cha ,  Myoung-Jae Lee ,  David Seo ,  Sun-Ae Seo

IPC分类号： G11C11/22

CPC分类号： G11C13/0007 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.

公开(公告)号：US08586978B2

公开(公告)日：2013-11-19

申请号：US12216529

申请日：2008-07-07

申请人： Ki-hwan Kim ,  Young-soo Park ,  Bo-soo Kang ,  Myoung-jae Lee ,  Chang-bum Lee

发明人： Ki-hwan Kim ,  Young-soo Park ,  Bo-soo Kang ,  Myoung-jae Lee ,  Chang-bum Lee

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： G11C11/36 ,  G11C11/14 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/76 ,  H01L27/1021

摘要： Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.

公开(公告)号：US08445882B2

公开(公告)日：2013-05-21

申请号：US13114497

申请日：2011-05-24

申请人： Dong-soo Lee ,  Man Chang ,  Young-bae Kim ,  Myoung-jae Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Ji-hyun Hur

发明人： Dong-soo Lee ,  Man Chang ,  Young-bae Kim ,  Myoung-jae Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Ji-hyun Hur

IPC分类号： H01L29/02

CPC分类号： G11C13/0004 ,  G11C2013/0073 ,  G11C2213/12 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/146

摘要： Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.

摘要翻译： 示例性实施例涉及非易失性存储器元件和包括其的存储器件。 非易失性存储元件可以包括在两个电极之间具有多层结构的存储层。 存储层可以包括第一和第二材料层，并且可以显示出由于其间的离子物质的移动而导致的电阻变化特性。 第一材料层可以是供氧层。 第二材料层可以是具有多阱水平的氧化物层。

公开(公告)号：US20130051164A1

公开(公告)日：2013-02-28

申请号：US13523429

申请日：2012-06-14

申请人： Man Chang ,  Young-bae Kim ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Kyung-min Kim

发明人： Man Chang ,  Young-bae Kim ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Kyung-min Kim

IPC分类号： G11C7/06 ,  G11C7/00

CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069

摘要： A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.

摘要翻译： 一种驱动非易失性存储器件的方法，包括：将复位电压施加到单元存储单元，读取单元存储单元的复位电流，确认复位电流是否在第一电流范围内，如果复位电流不在第一电流范围内 电流范围，如果复位电流在第一电流范围内，则改变复位电压并施加改变的复位电压或再次将施加设定电压的复位电压施加到单元存储单元， 在当前复位电流和紧接在前的设定电流之间的电流在第二电流范围内，并且如果该差值不在第二电流范围内，则在应用组合之后施加复位电压或再次施加复位电压到单元存储单元 电压到单元存储单元。