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公开(公告)号：US20150035409A1
公开(公告)日：2015-02-05
申请号：US14446237
申请日：2014-07-29
Applicant: STMicroelectronics S.r.I.
Inventor： Francesco Procopio , Carlo Valzasina , Alberto Corigliano , Raffaele Ardito , Giacomo Gafforelli
IPC: H02N2/18
Abstract: A piezoelectric transducer for energy-harvesting systems includes a substrate, a piezoelectric cantilever element, a first magnetic element, and a second magnetic element, mobile with respect to the first magnetic element. The first magnetic element is coupled to the piezoelectric cantilever element. The first magnetic element and the second magnetic element are set in such a way that, in response to relative movements between the first magnetic element and the second magnetic element through an interval of relative positions, the first magnetic element and the second magnetic element approach one another without coming into direct contact, and the interaction between the first magnetic element and the second magnetic element determines application of a force pulse on the piezoelectric cantilever element.
Abstract translation: 用于能量收集系统的压电换能器包括相对于第一磁性元件移动的基板，压电悬臂元件，第一磁性元件和第二磁性元件。 第一磁性元件耦合到压电悬臂元件。 第一磁性元件和第二磁性元件被设置为使得响应于通过相对位置的间隔在第一磁性元件和第二磁性元件之间的相对运动，第一磁性元件和第二磁性元件接近一个 另一个不直接接触，并且第一磁性元件和第二磁性元件之间的相互作用确定了在压电悬臂元件上施加力脉冲。
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92.发明申请OPTIMIZATION OF MANUFACTURING METHODOLOGY: P-CHANNEL TRENCH MOS WITH LOW VTH AND N-TYPE POLY 有权制造方法的优化：具有低V和N型聚合物的P通道TRENCH MOS公开(公告)号：US20150001615A1
公开(公告)日：2015-01-01
申请号：US13931637
申请日：2013-06-28
Inventor： Yean Ching Yong , Stefania Fortuna
IPC: H01L21/265 , H01L29/78 , H01L29/423 , H01L29/66
CPC classification number: H01L21/265 , H01L21/26513 , H01L29/1095 , H01L29/66734 , H01L29/7813 , H01L29/7827
Abstract: A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further comprises etching the trench to a depth of about 1.7 μm.
Abstract translation: 一种形成沟槽MOSFET的方法包括：在具有不同离子注入能量的多个离子注入步骤中掺杂沟槽MOSFET的体区。 该方法还包括将沟槽蚀刻至约1.7μm的深度。
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93.发明申请ELECTRONIC DEVICE WITH INTEGRATED TEMPERATURE SENSOR AND MANUFACTURING METHOD THEREOF 有权具有集成温度传感器的电子设备及其制造方法公开(公告)号：US20140369386A1
公开(公告)日：2014-12-18
申请号：US14308470
申请日：2014-06-18
Inventor： Praveen Kumar Radhakrishnan , Dino Faralli
IPC: G01K7/02
CPC classification number: B01L3/502715 , B01L3/502707 , B01L2300/0627 , B01L2300/0848 , B01L2300/12 , G01F1/6845 , G01F1/6888 , G01K7/02 , G01K7/021 , H01L35/32 , H01L35/325 , Y10T29/41
Abstract: A microfluidic-based sensor, comprising: a semiconductor body, having a first and a second side opposite to one another in a direction; a buried channel, extending within the semiconductor body; a structural layer, of dielectric or insulating material, formed over the first side of the semiconductor body at least partially suspended above the buried channel; and a first thermocouple element, including a first strip, of a first electrical conductive material, and a second strip, of a second electrical conductive material different from the first electrical conductive material, electrically coupled to the first strip. The first thermocouple element is buried in the structural layer and partially extends over the buried channel at a first location. A corresponding manufacturing method is disclosed.
Abstract translation: 一种微流体传感器，包括：半导体本体，具有沿一个方向彼此相对的第一和第二侧; 埋入通道，在半导体本体内延伸; 电介质或绝缘材料的结构层，形成在所述半导体本体的至少部分地悬挂在所述掩埋沟道上方的所述第一侧上; 以及与第一导电材料不同的第一导电材料的第一导电材料和第二条带的第一热电偶元件，第一导电材料和第二条带电连接到第一条带。 第一热电偶元件被埋在结构层中，并且在第一位置处部分地延伸穿过掩埋通道。 公开了相应的制造方法。
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94.发明申请METHOD OF PACKAGING A MEMS TRANSDUCER DEVICE AND PACKAGED MEMS TRANSDUCER DEVICE 有权包装MEMS传感器装置和包装的MEMS传感器装置的方法公开(公告)号：US20140291781A1
公开(公告)日：2014-10-02
申请号：US14224861
申请日：2014-03-25
Applicant: STMicroelectronics S.r.I.
Inventor： Mark Andrew Shaw , Fabrizio Soglio
CPC classification number: B81B7/0032 , B81C1/00261 , H01L29/84 , H04R19/005 , H04R19/02 , H04R31/00
Abstract: A packaged MEMS transducer device comprising: a die, including: a semiconductor body having a front side and a back side, opposite to one another in a first direction, at least one cavity extending through the semiconductor body between the front side and the back side, and at least one membrane extending on the front side at least partially suspended over the cavity; and a package designed to house the die on an inner surface thereof. The transducer device moreover includes a sealing layer extending on the back side of the semiconductor body for sealing the cavity, and includes a paste layer extending between the sealing layer and the inner surface of the package for firmly coupling the die to the package.
Abstract translation: 一种封装的MEMS换能器装置，包括：模具，包括：半导体本体，其具有在第一方向上彼此相对的前侧和后侧，至少一个在前侧和后侧之间延伸穿过半导体本体的空腔 并且至少一个膜在前侧延伸至少部分地悬挂在空腔上; 以及设计成在其内表面上容纳模具的包装。 换能器装置还包括在半导体本体的后侧延伸的密封层，用于密封空腔，并且包括在密封层和封装的内表面之间延伸的糊层，用于将管芯牢固地连接到封装。
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95.发明申请METHOD AND APPARATUS FOR IMAGE ENCODING AND/OR DECODING AND RELATED COMPUTER PROGRAM PRODUCTS 有权用于图像编码和/或解码及相关计算机程序产品的方法和装置公开(公告)号：US20140286584A1
公开(公告)日：2014-09-25
申请号：US14222803
申请日：2014-03-24
Applicant: STMicroelectronics S.r.I.
Inventor： Daniele ALFONSO
CPC classification number: H04N19/60 , H04N19/126 , H04N19/13 , H04N19/132 , H04N19/172 , H04N19/174 , H04N19/176 , H04N19/18 , H04N19/1883 , H04N19/423 , H04N19/44 , H04N19/63
Abstract: An embodiment for encoding digital images includes: partitioning the images into image blocks, subjecting the image blocks to transform into the frequency domain, and, possibly after thresholding resulting in lossy encoding, subjecting the image blocks transformed into the frequency domain to variable length coding to produce compressed encoded image blocks. Transform into the frequency domain may be, e.g., via wavelet transform, such as Haar wavelet transform, and variable length coding may be via Exponential-Golomb codes. An embodiment may also be adapted for transferring picture data over a bus in a system such as, e.g., a System-on-Chip (SoC) by generating compressed encoded image blocks for transfer over the bus and decoding compressed encoded image blocks transferred over the bus.
Abstract translation: 用于编码数字图像的实施例包括：将图像分割成图像块，使图像块变换到频域，并且可能在阈值化之后导致有损编码，将经变换到频域中的图像块进行可变长度编码 产生压缩编码图像块。 变换到频域可以是例如通过小波变换（例如Haar小波变换），并且可变长度编码可以经由指数 - 哥伦布码。 一个实施例还可以适用于通过生成用于在总线上传送的压缩编码图像块并解码通过总线传送的压缩编码图像块来在诸如片上系统（SoC）的系统中的总线上传送图像数据 总线。
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Patent Agency Ranking
公开(公告)号：US20140217943A1
公开(公告)日：2014-08-07
申请号：US14247817
申请日：2014-04-08
Applicant: STMICROELECTRONICS, INC. , STMICROELECTRONICS S.r.I.
Inventor： Frederic BONVIN , Agostino MIRABELLI , Maurizio NESSI
IPC: H02P6/18
Abstract: An embodiment of a motor controller includes first and second supply nodes, a motor-coil node, an isolator, a motor driver, and a motor position signal generator. The isolator is coupled between the first and second supply nodes, and the motor driver is coupled to the second supply node and to the motor-coil node. The motor position signal generator is coupled to the isolator and is operable to generate, in response to the isolator, a motor-position signal that is related to a position of a motor having at least one coil coupled to the motor-coil node. By generating the motor-position signal in response to the isolator, the motor controller or another circuit may determine the at-rest or low-speed position of a motor without using an external coil-current-sense circuit.
Abstract translation: 电动机控制器的实施例包括第一和第二供电节点，电动机线圈节点，隔离器，电动机驱动器和电动机位置信号发生器。 隔离器耦合在第一和第二电源节点之间，电动机驱动器耦合到第二电源节点和电动机线圈节点。 电动机位置信号发生器耦合到隔离器并且可操作以响应于隔离器产生与具有耦合到电动机线圈节点的至少一个线圈的电动机的位置有关的电动机位置信号。 通过响应于隔离器产生电动机位置信号，电动机控制器或另一电路可以在不使用外部线圈电流检测电路的情况下确定电动机的静止或低速位置。
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97.发明申请公开(公告)号：US20140217533A1
公开(公告)日：2014-08-07
申请号：US14168754
申请日：2014-01-30
Applicant: STMicroelectronics S.r.I.
Inventor： Alberto Pagani
IPC: H01L43/02
CPC classification number: H01L43/02 , G01R33/0005 , G01R33/0011 , G01R33/0047 , G01R33/04 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/15311 , H01L2924/18161 , H01L2224/13099 , H01L2224/05599
Abstract: An integrated magnetic sensor formed by a semiconductor chip having a surface and accommodating a magnetic via and a sensing coil. The magnetic via is formed by a cylindrical layer of ferromagnetic material that extends perpendicular to the surface of the first chip and has in cross-section an annular shape of a circular or elliptical or curvilinear type. The sensing coil surrounds the magnetic via at a distance and is connected to an electronic circuit.
Abstract translation: 由具有表面并容纳磁通孔和感测线圈的半导体芯片形成的集成磁传感器。 磁通孔由垂直于第一芯片的表面延伸的铁磁材料的圆柱形层形成，并且具有圆形或椭圆形或曲线型的环形形状。 感测线圈围绕磁通道一段距离并且连接到电子电路。
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98.发明授权Low voltage isolation switch, in particular for a transmission channel for ultrasound applications 有权低电压隔离开关，特别适用于超声波应用的传输通道公开(公告)号：US08791727B2
公开(公告)日：2014-07-29
申请号：US13907468
申请日：2013-05-31
Applicant: STMicroelectronics S.r.I.
Inventor： Valeria Bottarel , Giulio Ricotti , Fabio Quaglia
CPC classification number: H03K17/16 , H03K17/08104 , H03K17/30
Abstract: A low voltage isolation switch is suitable for receiving from a connection node a high voltage signal and transmitting said high voltage signal to a load via a connection terminal. The isolation switch includes a driving block connected between first and second voltage reference terminals and including a first driving transistor coupled between the first voltage reference (Vss) and a first driving circuit node and a second driving transistor coupled between the driving circuit node and the second supply voltage reference. The switch comprises an isolation block connected to the connection terminal (pzt), the connection node, and the driving central circuit node and including a voltage limiter block, a diode block and a control transistor. The control transistor is connected across the diode block between the connection node and the connection terminal and has a control terminal connected to the driving central circuit node.
Abstract translation: 低压隔离开关适合于从连接节点接收高电压信号，并通过连接端将所述高电压信号发送到负载。 隔离开关包括连接在第一和第二参考电极之间的驱动块，并且包括耦合在第一电压基准（Vss）和第一驱动电路节点之间的第一驱动晶体管和耦合在驱动电路节点和第二驱动电路节点之间的第二驱动晶体管 电源参考电压。 开关包括连接到连接端子（pzt）的隔离块，连接节点和驱动中心电路节点，并且包括电压限制器块，二极管块和控制晶体管。 控制晶体管连接在连接节点和连接端子之间的二极管块两端，并具有连接到驱动中心电路节点的控制端子。
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99.发明申请METHOD AND APPARATUS FOR COMPUTING IMAGE PYRAMIDS AND RELATED COMPUTER PROGRAM PRODUCT 有权用于计算图像斑块和相关计算机程序产品的方法和装置公开(公告)号：US20140198995A1
公开(公告)日：2014-07-17
申请号：US14156327
申请日：2014-01-15
Applicant: STMICROELECTRONICS S.r.I.
Inventor： Danilo Pietro PAU , Arcangelo Ranieri BRUNA , Ettore NAPOLI , Giorgio LOPEZ
IPC: G06T3/40
CPC classification number: G06T3/4092 , G06F17/30247 , G06K9/00986 , G06K9/4671 , G06K9/527 , G06T3/4084
Abstract: An embodiment of a method for computing pyramids of input images (I) in a transformed domain, e.g., for search and retrieval purposes, includes:—arranging input images in blocks to produce input image blocks,—subjecting the input image blocks to block processing including: transform into a transformed domain, subjecting the image blocks transformed into a transformed domain to filtering, subjecting the image blocks transformed into a transformed domain and filtered to inverse transform implementing an inverse transform with respect to the previous transform into a transformed domain, thus producing a set of processed blocks. The set of processed blocks, which is recomposeable to an image pyramid, may be used, e.g., in detecting extrema points in images in the pyramid, extracting a patch of given size around the extrema points detected, and processing the patch to obtain local descriptors such as SIFT descriptors of a feature.
Abstract translation: 用于计算变换域中的输入图像（I）的棱锥的方法的实施例，例如用于搜索和检索目的，包括： - 以块为单位布置输入图像以产生输入图像块， - 输入输入图像块以阻止处理 包括：变换为变换域，对经变换的域进行滤波，对变换后的图像块进行变换后进行逆变换，将前一变换的逆变换实现为变换域， 产生一组加工块。 可以使用可重构为图像金字塔的处理块的集合，例如，在检测金字塔中的图像中的极值点时，在检测到的极值点处提取给定大小的块，并且处理该补丁以获得局部描述符 例如功能的SIFT描述符。
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100.发明申请PROXIMITY SENSOR AND METHOD OF SENSING A DISTANCE OF AN OBJECT FROM A PROXIMITY SENSOR 有权近似传感器和传感器距离传感器距离物体的方法公开(公告)号：US20140191114A1
公开(公告)日：2014-07-10
申请号：US14146175
申请日：2014-01-02
Applicant: STMICROELECTRONICS S.r.I.
Inventor： Alfio RUSSO , Massimo Cataldo MAZZILLO
IPC: G01S17/02
CPC classification number: G01S17/026 , G01J1/44 , G01S17/08
Abstract: A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing, an estimated distance of an object from the array upon the sensing.
Abstract translation: 接近传感器可以包括Geiger模式雪崩光电二极管阵列，每个包括阳极接触和阴极接触。 公共阴极接触件可以耦合到阵列的阴极触点，以在阵列的背面限定第一连接引线。 公共阳极集电栅极触点可以耦合到阵列的阳极触点以限定阵列的第二连接引线。 电路可以与第一和第二连接引线耦合并且被配置为感测暗电流和在黑暗条件下产生的电流尖峰的速率中的至少一个，并且产生一个输出信号，该输出信号表示对象从阵列的估计距离 感应。
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