公开(公告)号：US07868305B2

公开(公告)日：2011-01-11

申请号：US11145949

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph C. Olson

发明人： Atul Gupta ,  Joseph C. Olson

IPC分类号： H01J37/302

CPC分类号： H01J37/304 ,  H01J37/1477 ,  H01J37/3171 ,  H01J2237/1507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L21/26586

摘要： A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.

摘要翻译： 公开了一种用于离子束角度扩展控制的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子束角度扩展控制的方法。 该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束，从而将衬底表面暴露于受控的离子束入射角扩散。

公开(公告)号：US07683347B2

公开(公告)日：2010-03-23

申请号：US11537050

申请日：2006-09-29

申请人： Atul Gupta ,  Anthony Renau ,  Donna Smatlak ,  Joseph C. Olson

发明人： Atul Gupta ,  Anthony Renau ,  Donna Smatlak ,  Joseph C. Olson

IPC分类号： H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/302 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

摘要翻译： 公开了一种改善离子注入通量和剂量均匀性的技术。 在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。 该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动 在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。 该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

公开(公告)号：US07655931B2

公开(公告)日：2010-02-02

申请号：US11693308

申请日：2007-03-29

申请人： Atul Gupta

发明人： Atul Gupta

IPC分类号： G21K5/10 ,  H05B31/26 ,  H01J27/26 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J2237/022

摘要： Techniques improving the performance and extending the lifetime of an ion source with gas mixing are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter. The method may comprise introducing a predetermined amount of dopant gas into an ion source chamber. The dopant gas may comprise a dopant species. The method may also comprise introducing a predetermined amount of diluent gas into the ion source chamber. The diluent gas may dilute the dopant gas to improve the performance and extend the lifetime of the ion source. The diluent gas may further comprise a co-species that is the same as the dopant species.

摘要翻译： 公开了通过气体混合改善离子源的性能和延长寿命的技术。 在一个特定的示例性实施例中，可以将技术实现为用于改进离子注入机中的离子源的性能和延长寿命的方法。 该方法可以包括将预定量的掺杂剂气体引入到离子源室中。 掺杂剂气体可以包括掺杂剂物质。 该方法还可以包括将预定量的稀释气体引入离子源室。 稀释气体可以稀释掺杂气体以改善性能并延长离子源的寿命。 稀释气体还可以包含与掺杂剂物质相同的共同物质。

公开(公告)号：US07642529B2

公开(公告)日：2010-01-05

申请号：US11541373

申请日：2006-09-29

申请人： Atul Gupta ,  Joseph C. Olson

发明人： Atul Gupta ,  Joseph C. Olson

IPC分类号： H01J37/317

CPC分类号： H01L22/14 ,  H01J37/1471 ,  H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24578 ,  H01J2237/3045 ,  H01J2237/31703

摘要： A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data. A method of determining a substrate miscut is also provided.

摘要翻译： 一种方法包括将离子束相对于衬底的目标表面以多个不同的入射角引导，以将离子注入到衬底的多个部分中，其中多个不同入射角中的每一个与不同的入射角相关联 多个部分中的一个，测量来自基板的多个部分中的每个部分的角度敏感数据，以及从角度敏感数据确定入射到目标表面上的目标表面和离子束之间的角度偏移。 还提供了确定衬底杂交的方法。

公开(公告)号：US20090104719A1

公开(公告)日：2009-04-23

申请号：US11877312

申请日：2007-10-23

申请人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

发明人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.

摘要翻译： 等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 测量吸附到基底的一定剂量的离子。 执行至少一个传感器测量以确定等离子体室的状态。 此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

公开(公告)号：US20080245957A1

公开(公告)日：2008-10-09

申请号：US11695747

申请日：2007-04-03

申请人： Atul Gupta ,  Jay Scheuer ,  Daniel Distaso ,  Antonella Cucchetti ,  William G. Callahan

发明人： Atul Gupta ,  Jay Scheuer ,  Daniel Distaso ,  Antonella Cucchetti ,  William G. Callahan

IPC分类号： G21K5/00 ,  G01D18/00

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J37/304 ,  H01J2237/30433

摘要： An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.

摘要翻译： 描述了调整离子注入机以获得最佳性能的方法。 在一个实施例中，存在用于调整具有多个束线元件的离子注入机的系统，以产生具有所需波束特性的离子束。 在该实施例中，系统包括被配置为提供用于产生所需光束特性的波束线元件设置的波束线元件设置控制器。 调谐模型将光束元素设置与光束属性相关联。 校准组件被配置为响应于从使用调谐的波束线元件设置测量的波束特性与所确定的调谐波束线元件设置不同的确定校准调谐模型。

公开(公告)号：US07394078B2

公开(公告)日：2008-07-01

申请号：US11146072

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph C. Olson

发明人： Atul Gupta ,  Joseph C. Olson

IPC分类号： G21K5/10

CPC分类号： H01J37/3171 ,  H01J2237/2487 ,  H01J2237/30411 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/26586 ,  H01L29/66803

摘要： A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

摘要翻译： 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中，该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量，从而将基底表面暴露于受控的离子束角度 - 剂量分布。

公开(公告)号：US20060208204A1

公开(公告)日：2006-09-21

申请号：US11146072

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph Olson

发明人： Atul Gupta ,  Joseph Olson

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/2487 ,  H01J2237/30411 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/26586 ,  H01L29/66803

摘要： A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

摘要翻译： 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中，该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量，从而将基底表面暴露于受控的离子束角度 - 剂量分布。

公开(公告)号：US20050287307A1

公开(公告)日：2005-12-29

申请号：US10874944

申请日：2004-06-23

申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

IPC分类号： C03C15/00 ,  C23C14/00 ,  H01L21/223

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

摘要翻译： 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。

公开(公告)号：US20050254566A1

公开(公告)日：2005-11-17

申请号：US11187266

申请日：2005-07-22

申请人： Apu Sivadas ,  Atul Gupta ,  Kenneth Lazaris-Brunner ,  Vasilis Papanikolaou ,  Rajiv Shukla ,  Bharat Tailor

发明人： Apu Sivadas ,  Atul Gupta ,  Kenneth Lazaris-Brunner ,  Vasilis Papanikolaou ,  Rajiv Shukla ,  Bharat Tailor

IPC分类号： H04L25/03 ,  H03H7/30 ,  H03H21/00 ,  H04B3/04 ,  H04L25/00 ,  H04L27/08

CPC分类号： H04L25/03885

摘要： Transmit amplitude independent adaptive equalizers are provided that compensate for transmission losses in an input signal when the transmit signal amplitude is unknown. Several embodiments are provided, including a first embodiment having an equalizer core, a controllable-swing slicer and an amplitude control loop, a second embodiment having an equalizer core, a fixed-swing slicer and a control loop, a third embodiment having an equalizer core, a variable gain amplifier, and a variable gain amplifier control loop, and a fourth embodiment having an equalizer core, a fixed-swing slicer, a variable gain amplifier, and a variable gain amplifier control loop.