公开(公告)号：US20100126668A1

公开(公告)日：2010-05-27

申请号：US12696323

申请日：2010-01-29

申请人： Akira KOSHIISHI ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

发明人： Akira KOSHIISHI ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC分类号： C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US07542148B2

公开(公告)日：2009-06-02

申请号：US11564604

申请日：2006-11-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： G01B11/02

CPC分类号： G01B9/02023 ,  G01B9/02019 ,  G01B9/02028 ,  G01B9/02083 ,  G01B9/0209 ,  G01J5/0003 ,  G01J2005/583 ,  G01K5/52 ,  G01K11/00 ,  G01K11/3206

摘要： A method capable of accurately measuring a physical quantity of a measurement object in a substrate processing apparatus. In a temperature measurement apparatus for implementing the method, two interference positions are measured at different timings when a reference mirror is caused to move in the direction away from a collimator fiber, and a difference between the two interference positions is calculated. When the reference mirror remote from the collimator fiber is caused to move toward the collimator fiber, two interference positions are measured at different timings, and a difference between the two interference positions is calculated. An average value of the interference position differences is calculated, an optical path length difference is determined from the average value, and a wafer temperature is calculated from the optical path length difference.

摘要翻译： 一种能够精确地测量基板处理装置中的测量对象的物理量的方法。 在实现该方法的温度测量装置中，当使参考反射镜沿远离准直光纤的方向移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 当使远离准直光纤的参考镜向准直器光纤移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 计算干涉位置差的平均值，根据平均值确定光程长度差，并根据光程长度差计算晶片温度。

公开(公告)号：US20080304543A1

公开(公告)日：2008-12-11

申请号：US12043654

申请日：2008-03-06

申请人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

发明人： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： G01K1/02

CPC分类号： G01J5/02 ,  G01K1/026 ,  G01K11/125

摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

摘要翻译： 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US20080218744A1

公开(公告)日：2008-09-11

申请号：US12043406

申请日：2008-03-06

申请人： Jun ABE ,  Tatsuo Matsudo ,  Chishio Koshimizu

发明人： Jun ABE ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： G01N21/00

CPC分类号： G01K11/125

摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.

摘要翻译： 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括控制器，该控制器通过将第一至第N测量光束照射到温度测量对象的第一至第N测量点上，预先分别测量的干扰峰的位置作为初始峰值位置数据，并将其进行比较 初始峰值位置数据分别在温度测量期间测量的干涉峰位置，从而估计第一至第n测量点中的每一个处的温度。

公开(公告)号：US07335278B2

公开(公告)日：2008-02-26

申请号：US10675966

申请日：2003-10-02

申请人： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

发明人： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/6831 ,  H01J37/32623 ,  H01J37/32642 ,  H01J2237/2001 ,  H01L21/67248 ,  Y10S156/915

摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给第一至第三温度传感器142,144和146的中心之间的空间的He的压力水平 晶片W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116与晶片W的外边缘和静电卡盘108之间的空间以及由外部环内的加热器148产生的热量 基于关于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

公开(公告)号：US20070227665A1

公开(公告)日：2007-10-04

申请号：US11694126

申请日：2007-03-30

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： C23F1/00 ,  H01L21/465

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H01J37/32706 ,  H01J37/32935

摘要： A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.

摘要翻译： 等离子体处理方法通过使用在处理空间中产生的等离子体在衬底上进行所需的等离子体处理。 第一电极和第二电极平行放置在接地的处理容器中，基板被支撑在第二电极上以面对第一电极，处理容器被真空抽真空，所需的处理气体被供应到形成的处理空间 在第一电极，第二电极和处理容器的侧壁之间，并且向第二电极提供第一射频功率。 第一电极经由绝缘体或空间连接到处理容器，并且经由静电电容根据在衬底上进行的等离子体处理的工艺条件而变化的电容变化单元电耦合到接地电位。

公开(公告)号：US20070127034A1

公开(公告)日：2007-06-07

申请号：US11564604

申请日：2006-11-29

申请人： Chishio Koshimizu ,  Tomohiro Suzuki

发明人： Chishio Koshimizu ,  Tomohiro Suzuki

IPC分类号： G01B11/02 ,  G01B9/02

CPC分类号： G01B9/02023 ,  G01B9/02019 ,  G01B9/02028 ,  G01B9/02083 ,  G01B9/0209 ,  G01J5/0003 ,  G01J2005/583 ,  G01K5/52 ,  G01K11/00 ,  G01K11/3206

摘要： A method capable of accurately measuring a physical quantity of a measurement object in a substrate processing apparatus. In a temperature measurement apparatus for implementing the method, two interference positions are measured at different timings when a reference mirror is caused to move in the direction away from a collimator fiber, and a difference between the two interference positions is calculated. When the reference mirror remote from the collimator fiber is caused to move toward the collimator fiber, two interference positions are measured at different timings, and a difference between the two interference positions is calculated. An average value of the interference position differences is calculated, an optical path length difference is determined from the average value, and a wafer temperature is calculated from the optical path length difference.

摘要翻译： 一种能够精确地测量基板处理装置中的测量对象的物理量的方法。 在实现该方法的温度测量装置中，当使参考反射镜沿远离准直光纤的方向移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 当使远离准直光纤的参考镜向准直器光纤移动时，在不同的定时测量两个干涉位置，并且计算两个干涉位置之间的差。 计算干涉位置差的平均值，根据平均值确定光程长度差，并根据光程长度差计算晶片温度。

公开(公告)号：US20070089835A1

公开(公告)日：2007-04-26

申请号：US11566340

申请日：2006-12-04

申请人： Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

发明人： Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

公开(公告)号：US20060219363A1

公开(公告)日：2006-10-05

申请号：US11393673

申请日：2006-03-31

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

公开(公告)号：US20060066247A1

公开(公告)日：2006-03-30

申请号：US11157061

申请日：2005-06-21

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC分类号： H01J7/24

CPC分类号： H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a variable DC power supply to apply a DC voltage to the upper electrode, so as to cause the absolute value of a self-bias voltage on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode side to generate predetermined pressed plasma.

摘要翻译： 等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体，以对晶片W进行等离子体蚀刻。该装置还包括用于向上电极施加直流电压的可变直流电源， 使得其表面上的自偏压的绝对值足够大以在表面上获得合适的溅射效应，并且增加上电极侧的等离子体鞘长度以产生预定的按压等离子体。