公开(公告)号：US06900106B2

公开(公告)日：2005-05-31

申请号：US10094581

申请日：2002-03-06

申请人： Cem Basceri ,  Garo J. Derderian

发明人： Cem Basceri ,  Garo J. Derderian

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/20

CPC分类号： H01L21/7687 ,  H01L21/76877 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75 ,  Y10S438/964

摘要： The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

摘要翻译： 本发明包括形成半导体结构的方法。 提供半导体衬底，并且形成由半导体衬底支撑的导电节点。 第一导电材料形成在导电节点上并成形为容器。 容器具有在其中延伸的开口和靠近开口的上表面。 容器开口至少部分地填充有绝缘材料。 第二导电材料形成在至少部分填充的容器开口上并且物理地抵靠容器的上表面。 本发明还包括半导体结构。

公开(公告)号：US06861094B2

公开(公告)日：2005-03-01

申请号：US10133909

申请日：2002-04-25

申请人： Garo J. Derderian ,  Gurtej Sandhu

发明人： Garo J. Derderian ,  Gurtej Sandhu

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/45565 ,  C23C16/45574

摘要： A method of forming a layer on a micro-device workpiece includes dispensing a first pulse of a first precursor at a first region of the workpiece to flow toward a second region of the workpiece. The second region of the workpiece is located radially outward relative to the first region of the workpiece. The embodiment of this method further includes dispensing a first pulse of a purge gas at the first region of the workpiece to flow toward the second region of the workpiece after terminating the first pulse of the first precursor. Additionally, this embodiment also includes dispensing a second pulse of a first precursor at the second region of the workpiece to flow radially outward concurrently with dispensing the first pulse of a purge gas in the first region of the workpiece. The first pulse of the purge gas is terminated at the first region of the workpiece, and the second pulse of the first precursor is terminated at the second region. At this stage, the method further includes dispensing a first pulse of a second precursor at the first region of the workpiece to flow radially outward toward the second region, and dispensing a second pulse of the purge gas at the second region of the workpiece to flow radially outward concurrently with the first pulse of the second precursor in the first region. A single cycle of the process can further include dispensing a third pulse of the purge gas onto the first region of the workpiece to flow radially outward after terminating the first pulse of the second precursor, and concurrently dispensing a second pulse of the second precursor in the second region to flow radially outward.

摘要翻译： 在微器件工件上形成层的方法包括在工件的第一区域处分配第一前体的第一脉冲以朝向工件的第二区域流动。 工件的第二区域相对于工件的第一区域径向向外定位。 该方法的实施例还包括在终止第一前体的第一脉冲之后，在工件的第一区域分配吹扫气体的第一脉冲流向工件的第二区域。 此外，该实施例还包括在工件的第二区域处分配第一前体的第二脉冲，以在工件的第一区域中分配吹扫气体的第一脉冲同时径向向外流动。 吹扫气体的第一脉冲在工件的第一区域处终止，并且第一前体的第二脉冲在第二区域终止。 在该阶段，该方法还包括在工件的第一区域处分配第二前体的第一脉冲以朝向第二区域径向向外流动，并且在工件的第二区域处分配吹扫气体的第二脉冲以流动 与第一区域中的第二前体的第一脉冲同时径向向外。 该过程的单个循环还可以包括将终止第二前体的第一脉冲之后的吹扫气体的第三脉冲分配到工件的第一区域上以径向向外流动，并且同时分配第二前体的第二脉冲 第二区域径向向外流动。

公开(公告)号：US06835980B2

公开(公告)日：2004-12-28

申请号：US10389910

申请日：2003-03-18

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： H01L2976

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

摘要翻译： 使用原子层沉积（ALD）工艺参数在半导体器件中在衬底上沉积薄膜的方法将衬底暴露于至少一种粘附材料，其量足以使材料吸附到衬底上，从而形成起始层 。 引发层呈现至少一个第一反应性部分，然后使用原子层沉积条件与至少一种第一反应材料进行化学反应以形成第二反应性部分。 然后在足以在起始层上形成反应层的工艺条件下，将第二反应性部分与至少一种第二反应材料化学反应。 可以重复该过程以在起始层上形成连续的反应层。 构成起始层的粘合材料优选为原子层沉积参数基本上不劣化的材料。 起始层与一个或多个反应层一起构成最终的膜。

公开(公告)号：US06511896B2

公开(公告)日：2003-01-28

申请号：US09827759

申请日：2001-04-06

申请人： Cem Basceri ,  Garo J. Derderian ,  Mark R. Visokay ,  John M. Drynan ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Garo J. Derderian ,  Mark R. Visokay ,  John M. Drynan ,  Gurtej S. Sandhu

IPC分类号： H01L2146

CPC分类号： H01L21/31122 ,  H01L21/28061 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659

摘要： In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising layer over a substrate, methods of forming a transistor gate line over a substrate, methods of forming a patterned substantially crystalline Ta2O5 comprising material, and methods of forming a capacitor dielectric region comprising substantially crystalline Ta2O5 comprising material. In one implementation, a semiconductor processing method includes forming a substantially amorphous Ta2O5 comprising layer over a semiconductive substrate. The layer is exposed to WF6 under conditions effective to etch substantially amorphous Ta2O5 from the substrate. In one implementation, the layer is exposed to WF6 under conditions effective to both etch substantially amorphous Ta2O5 from the substrate and deposit a tungsten comprising layer over the substrate during the exposing.

摘要翻译： 部分地，公开了半导体处理方法，在衬底上沉积含钨层的方法，在衬底上沉积含氮化钨的层的方法，在衬底上沉积包含硅化钨的层的方法，形成晶体管栅极的方法 在衬底上划线，形成图案化的基本上结晶的Ta 2 O 5的材料的方法，以及形成包含基本上结晶的Ta 2 O 5的材料的电容器电介质区域的方法。 在一个实施方案中，半导体处理方法包括在半导体衬底上形成包含基本非晶态的Ta 2 O 5层。 该层在有效从底物上蚀刻基本无定形Ta 2 O 5的条件下暴露于WF6。 在一个实施方案中，该层在有效地从衬底上蚀刻基本上无定形Ta 2 O 5的条件下暴露于WF6，并在曝光期间在衬底上沉积含钨层。

公开(公告)号：US06458416B1

公开(公告)日：2002-10-01

申请号：US09619449

申请日：2000-07-19

申请人： Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： B05D136

CPC分类号： C23C16/45525 ,  B05D1/185 ,  C23C16/04 ,  C23C16/045 ,  C23C16/403 ,  C23C16/45531 ,  C30B25/18 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3162

摘要： A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is contacted with a second initiation precursor different from the first initiation precursor and a second portion of the initiation layer is formed on the substrate. The substrate may be simultaneously contacted with a plurality of initiation precursors, forming on the substrate and initiation layer comprising components derived from each of the plurality of initiation precursors. An initiation layer may be contacted with a deposition precursor, forming a deposition layer on the initiation layer. The deposition layer may be contacted with a second initiation precursor different from the first initiation precursor forming a second initiation layer over the substrate. Also, a first initiation layer may be formed substantially selectively on a first-type substrate surface relative to a second-type substrate surface and contacted with a deposition precursor, forming a deposition layer substantially selectively over the first-type substrate surface.

摘要翻译： 沉积方法包括使基底与第一起始前体接触，并在基底上形成起始层的第一部分。 基板的至少一部分与不同于第一起始前体的第二起始前体接触，并且在基板上形成起始层的第二部分。 衬底可以与多个起始前体同时接触，在衬底上形成并且起始层包含衍生自多个起始前体中的每一个的成分。 引发层可以与沉积前体接触，在引发层上形成沉积层。 沉积层可以与不同于第一起始前体的第二引发前体接触，从而在衬底上形成第二起始层。 此外，第一起始层可以基本上选择性地形成在相对于第二类型衬底表面的第一类型衬底表面上，并与沉积前体接触，在第一类型衬底表面上基本上选择性地形成沉积层。

公开(公告)号：US06451692B1

公开(公告)日：2002-09-17

申请号：US09642976

申请日：2000-08-18

申请人： Garo J. Derderian ,  Gordon Morrison

发明人： Garo J. Derderian ,  Gordon Morrison

IPC分类号： C23C1634

CPC分类号： C23C16/4557 ,  C23C16/34 ,  C23C16/452 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

摘要： Chemical vapor deposition methods utilizing preheating of one or more of the reactant gases used to form deposited layers, chemical vapor deposition systems to perform the methods, and apparatus containing deposited layers produced using the methods. The reactant gases contain at least one chemical vapor deposition precursor. Heating one or more of the reactant gases prior to introduction to the reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer with reactant gases containing the precursors of titanium tetrachloride and ammonia. Preheating the reactant gases containing titanium tetrachloride and ammonia can reduce ammonium chloride levels in the resulting titanium nitride layer, thereby reducing or eliminating the need for post-processing to remove the ammonium chloride impurity. Chemical vapor deposition systems include one or more heaters to raise the temperature of the reactant gases prior to introduction to the reaction chamber.

摘要翻译： 使用用于形成沉积层的一种或多种反应气体的预热的化学气相沉积方法，用于执行该方法的化学气相沉积系统以及含有使用该方法制备的沉积层的装置。 反应物气体含有至少一种化学气相沉积前体。 在引入反应室之前加热一种或多种反应气体可以用于改善所得沉积层的物理特性，以改善下面的衬底的物理特性和/或改进可用于后续处理的热预算。 一个实例包括用含有四氯化钛和氨的前体的反应气体形成氮化钛层。 预热含有四氯化钛和氨的反应物气体可以降低所得氮化钛层中的氯化铵含量，从而减少或消除后处理以除去氯化铵杂质的需要。 化学气相沉积系统包括一个或多个加热器，以在引入反应室之前提高反应气体的温度。

公开(公告)号：US06420230B1

公开(公告)日：2002-07-16

申请号：US09652532

申请日：2000-08-31

申请人： Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： H01L218242

CPC分类号： H01L21/3162 ,  H01L21/02178 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/84 ,  H01L28/91

摘要： A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al2O3. A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H2O and the second precursor may include trimethyl aluminum.

公开(公告)号：US06407452B1

公开(公告)日：2002-06-18

申请号：US09611586

申请日：2000-07-07

申请人： Vishnu K. Agarwal ,  Garo J. Derderian

发明人： Vishnu K. Agarwal ,  Garo J. Derderian

IPC分类号： H01L2348

CPC分类号： H01L21/76846 ,  H01L21/76843 ,  H01L21/76864 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes methods of restricting diffusion between materials. First and second different materials which are separated by a barrier layer capable of restricting diffusion of material between the first and second materials are provided. The barrier layer is formed by forming a first layer of a third material over the first material. A second layer of the third material is formed on the first layer. The second material is formed over the second layer of the third material. In another aspect, the invention relates to diffusion barrier layers. In one implementation, such a layer comprises a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same material. In another aspect, the invention relates to integrated circuitry. In one implementation, a semiconductive substrate has a conductive diffusion region formed therein. An insulative dielectric layer is received over the substrate and has a conductive contact formed therein which is in electrical connection with the diffusion region. The conductive contact comprises a conductive barrier layer proximate the diffusion region. The conductive barrier layer comprises a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same conductive material.

摘要翻译： 本发明包括限制材料之间扩散的方法。 提供由能够限制材料在第一和第二材料之间的扩散的阻挡层隔开的第一和第二不同材料。 阻挡层通过在第一材料上形成第三材料的第一层而形成。 在第一层上形成第二材料的第二层。 第二材料形成在第三材料的第二层上。 另一方面，本发明涉及扩散阻挡层。 在一个实施方式中，这样的层包括相同材料的两个立即并置和接触但离散的层的复合物。 在另一方面，本发明涉及集成电路。 在一个实施方式中，半导体衬底在其中形成有导电扩散区域。 绝缘电介质层被接收在衬底上并且具有形成在其中的与扩散区电连接的导电接触。 导电接触包括靠近扩散区的导电阻挡层。 导电阻挡层包括相同导电材料的两个立即并置和接触但离散的层的复合物。

公开(公告)号：US06365486B1

公开(公告)日：2002-04-02

申请号：US09478745

申请日：2000-01-06

申请人： Vishnu K. Agarwal ,  Gurtej S. Sandhu ,  Garo J. Derderian

发明人： Vishnu K. Agarwal ,  Gurtej S. Sandhu ,  Garo J. Derderian

IPC分类号： H01L21324

CPC分类号： H01L28/56 ,  H01L27/1085

摘要： A capacitor for a semiconductor device is fabricated by a method which reduces the interaction of a capacitor electrode and a dielectric layer in the capacitor. One or more passivation layers are formed at the interface between the dielectric layer and an electrode in the capacitor by exposing the dielectric layer or electrode to a reactive environment during fabrication in order to form a passivation layer thereon prior to forming an overlying dielectric layer or electrode. The passivation layer reduces the diffusion of oxygen from the dielectric layer to the electrode, resulting in reduced current leakage in the capacitor.

摘要翻译： 通过减少电容器电容器和电介质层的相互作用的方法制造用于半导体器件的电容器。 通过在制造期间将电介质层或电极暴露于反应性环境，以在形成覆盖的介电层或电极之前在其上形成钝化层，在介电层和电容器中的电极之间的界面处形成一个或多个钝化层 。 钝化层减少氧从电介质层扩散到电极，导致电容器中的电流泄漏减少。

公开(公告)号：US06355561B1

公开(公告)日：2002-03-12

申请号：US09716288

申请日：2000-11-21

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.