利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

1067 条记录 (耗时 0.029 秒)

    Deposition methods
    3.
    发明授权
    Deposition methods 失效
    沉积方法

    公开(公告)号：US07498057B2

    公开(公告)日：2009-03-03

    申请号：US11075017

    申请日：2005-03-08

    申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    IPC分类号： C23C16/04

    CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455

    摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.

    摘要翻译： 沉积方法包括将基板定位在至少部分地由室壁限定的沉积室内。 所述室壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。 在衬底上设置工艺气体，有效地将层沉积到衬底上。 在这种提供过程中，材料粘附到室表面。 反应性净化气体从吹扫气体入口排出到沉积室，有效地在室表面上形成反应性气体帘幕并远离衬底，这种反应性气体与这种粘附材料反应。 考虑进一步的实现。

    Atomic Layer Deposition Methods
    4.
    发明申请
    Atomic Layer Deposition Methods 审中-公开
    原子层沉积方法

    公开(公告)号：US20080241386A1

    公开(公告)日：2008-10-02

    申请号：US12115412

    申请日：2008-05-05

    申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    IPC分类号： C23C16/08

    CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

    摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

    摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间体组合物单层，随后是与中间体组合物反应所需的沉积组合物，共同地将多个不同的组合物沉积前体流入沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

    Atomic layer deposition methods
    5.
    发明授权
    Atomic layer deposition methods 有权
    原子层沉积法

    公开(公告)号：US07303991B2

    公开(公告)日：2007-12-04

    申请号：US10863048

    申请日：2004-06-07

    申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

    IPC分类号： H01L21/44

    CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

    摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

    摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间体组合物单层，随后是与中间体组合物反应所需的沉积组合物，共同地将多个不同的组合物沉积前体流入沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中并且有效地与这种粘附材料反应的室。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

    Deposition methods with time spaced and time abutting precursor pulses
    6.
    发明授权
    Deposition methods with time spaced and time abutting precursor pulses 有权
    具有时间间隔和时间邻接前体脉冲的沉积方法

    公开(公告)号：US07271077B2

    公开(公告)日：2007-09-18

    申请号：US10734999

    申请日：2003-12-12

    申请人： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

    发明人： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： H01L21/36 ,  H01L21/20

    CPC分类号： C30B25/14 ,  C23C16/45527 ,  C30B25/02

    摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precursor gas flowing comprises a plurality of first precursor gas pulses. The plurality of first precursor gas pulses comprises at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber. After forming the first monolayer on the substrate, a second precursor gas different in composition from the first is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

    摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 第一前体气体流动包括多个第一前体气体脉冲。 多个第一前体气体脉冲包括当没有气体被供给到腔室时在两个紧邻的第一前体气体脉冲之间的至少一个总时间段。 在衬底上形成第一单层之后，组成不同于第一衬底的第二前体气体流入沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

    Capacitor fabrication methods including forming a conductive layer
    7.
    发明授权
    Capacitor fabrication methods including forming a conductive layer 有权
    电容器制造方法包括形成导电层

    公开(公告)号：US07217615B1

    公开(公告)日：2007-05-15

    申请号：US09653149

    申请日：2000-08-31

    申请人： Garo J. Derderian ,  Gurtej S. Sandhu

    发明人： Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/56 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28568 ,  H01L21/31604 ,  H01L28/75 ,  H01L28/84

    摘要： A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer, a chemisorption product of the first and second precursor layers being comprised by a layer of a conductive barrier material. The barrier layer may be sufficiently thick and dense to reduce oxidation of the first electrode by oxygen diffusion from over the barrier layer. An alternative method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit area that are both greater than an outer surface area per unit area of the substrate. A capacitor dielectric layer and a second capacitor electrode may be formed over the dielectric layer. The method may further include forming rugged polysilicon over the substrate, the first electrode being over the rugged polysilicon. Accordingly, the outer surface area of the first electrode can be at least 30% greater than the outer surface area of the substrate without the first electrode including polysilicon.

    摘要翻译： 电容器制造方法可以包括在第一电极上的氧扩散的原子层沉积导电阻挡层。 一种方法可以包括在第一电极上化学吸附至少一层单层的第一前体层，并化学吸附第一前体层上至少一层单层的第二前体层，第一和第二前体层的化学吸附产物 由导电阻挡材料层组成。 阻挡层可以是足够厚且致密的，以通过从阻挡层上方的氧扩散来减少第一电极的氧化。 替代方法可以包括在衬底上形成第一电容器电极，第一电极具有每单位面积的内表面积和每单位面积的外表面积，其大于衬底每单位面积的外表面积。 可以在电介质层上形成电容器电介质层和第二电容器电极。 该方法还可以包括在衬底上形成坚固的多晶硅，第一电极在坚固的多晶硅之上。 因此，第一电极的外表面积可以比不含第一电极包括多晶硅的衬底的外表面积大至少30％。

    Enhanced surface area capacitor fabrication methods
    8.
    发明授权
    Enhanced surface area capacitor fabrication methods 失效
    增强表面积电容器制造方法

    公开(公告)号：US07053432B2

    公开(公告)日：2006-05-30

    申请号：US09882534

    申请日：2001-06-14

    申请人： Garo J. Derderian ,  Gurtej S. Sandhu

    发明人： Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： H01L27/108

    CPC分类号： H01L21/3162 ,  H01L21/02178 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/84 ,  H01L28/91

    摘要： A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al2O3. A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H2O and the second precursor may include trimethyl aluminum.

    摘要翻译： 电容器制造方法可以包括在衬底上形成第一电容器电极，并且将原子层沉积在第一电极上的氧扩散的绝缘阻挡层上。 可以在第一电极上形成电容器电介质层，并且可以在电介质层上形成第二电容器电极。 阻挡层可以包括Al 2 O 3 3。 电容器制造方法还可以包括在衬底上形成第一电容器电极，在第一电极上化学吸附至少一层单层厚度的第一前体层，以及化学吸附第一前体上的至少一层单层的第二前体层 层。 第一和第二前体的化学吸附产物可以由绝缘屏障材料层构成。 第一前体可以包括H 2 O，第二前体可以包括三甲基铝。

    Method of forming a rough (high surface area) electrode from Ti and TiN capacitors and semiconductor devices including same
    9.
    发明授权
    Method of forming a rough (high surface area) electrode from Ti and TiN capacitors and semiconductor devices including same 失效
    从Ti和TiN电容器形成粗糙（高表面积）电极的方法和包括其的半导体器件

    公开(公告)号：US06902985B2

    公开(公告)日：2005-06-07

    申请号：US10215513

    申请日：2002-08-08

    申请人： Garo J. Derderian ,  Gurtej S. Sandhu

    发明人： Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/20

    CPC分类号： H01L28/84 ,  H01L27/10852 ,  Y10S438/964

    摘要： A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.

    摘要翻译： 一种用于形成用于电容器的高表面积电极或存储节点以及由此形成的器件的技术，包括在衬底上沉积第一导电材料层，从而形成不连续层。 在不连续的第一导电材料层上沉积第二导电材料层，使得第二导电材料层以不连续的第一导电材料中的衬底的暴露区域的速度比不连续的第一导电材料层生长或积聚 层以形成粗糙的导电材料层。

    Atomic layer deposition apparatus and methods
    10.
    发明授权
    Atomic layer deposition apparatus and methods 失效
    原子层沉积装置及方法

    公开(公告)号：US06896730B2

    公开(公告)日：2005-05-24

    申请号：US10163689

    申请日：2002-06-05

    申请人： Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  Demetrius Sarigiannis

    发明人： Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  Demetrius Sarigiannis

    IPC分类号： C30B25/00 ,  C30B35/00 ,  C30B25/14 ,  C30B25/16

    CPC分类号： C30B35/00 ,  C30B25/00 ,  C30B29/68

    摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A fixed volume first precursor gas charge is provided within a gas flow path to the deposition chamber. A fixed volume purge gas charge is provided within the gas flow path serially upstream of the first precursor gas charge. The first precursor gas charge and the purge gas charge are serially flowed along the gas flow path to the substrate within the deposition chamber effective to form a monolayer on the substrate and purge at least some of the first precursor gas from the substrate. Apparatus are also disclosed.

    摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 在到达沉积室的气体流动路径内提供固定体积的第一前体气体进料。 在第一前体气体装料的串联的气体流动路径内提供固定体积的吹扫气体装料。 第一前体气体装料和吹扫气体装料沿着气体流动路径顺序地流动到沉积室内的基板，有效地在基板上形成单层，并且从基板吹扫至少一些第一前体气体。 还公开了装置。