公开(公告)号：US06596636B2

公开(公告)日：2003-07-22

申请号：US10059308

申请日：2002-01-31

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

公开(公告)号：US06949827B2

公开(公告)日：2005-09-27

申请号：US10874369

申请日：2004-06-24

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： C23C16/30 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/365 ,  H01L21/768 ,  H01L27/10 ,  H01L29/51 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

摘要翻译： 使用原子层沉积（ALD）工艺参数在半导体器件中在衬底上沉积薄膜的方法将衬底暴露于至少一种粘附材料，其量足以使材料吸附到衬底上，从而形成起始层 。 引发层呈现至少一个第一反应性部分，然后使用原子层沉积条件与至少一种第一反应材料进行化学反应以形成第二反应性部分。 然后在足以在起始层上形成反应层的工艺条件下，将第二反应性部分与至少一种第二反应材料化学反应。 可以重复该过程以在起始层上形成连续的反应层。 构成起始层的粘合材料优选为原子层沉积参数基本上不劣化的材料。 起始层与一个或多个反应层一起构成最终的膜。

公开(公告)号：US06861094B2

公开(公告)日：2005-03-01

申请号：US10133909

申请日：2002-04-25

申请人： Garo J. Derderian ,  Gurtej Sandhu

发明人： Garo J. Derderian ,  Gurtej Sandhu

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/45565 ,  C23C16/45574

摘要： A method of forming a layer on a micro-device workpiece includes dispensing a first pulse of a first precursor at a first region of the workpiece to flow toward a second region of the workpiece. The second region of the workpiece is located radially outward relative to the first region of the workpiece. The embodiment of this method further includes dispensing a first pulse of a purge gas at the first region of the workpiece to flow toward the second region of the workpiece after terminating the first pulse of the first precursor. Additionally, this embodiment also includes dispensing a second pulse of a first precursor at the second region of the workpiece to flow radially outward concurrently with dispensing the first pulse of a purge gas in the first region of the workpiece. The first pulse of the purge gas is terminated at the first region of the workpiece, and the second pulse of the first precursor is terminated at the second region. At this stage, the method further includes dispensing a first pulse of a second precursor at the first region of the workpiece to flow radially outward toward the second region, and dispensing a second pulse of the purge gas at the second region of the workpiece to flow radially outward concurrently with the first pulse of the second precursor in the first region. A single cycle of the process can further include dispensing a third pulse of the purge gas onto the first region of the workpiece to flow radially outward after terminating the first pulse of the second precursor, and concurrently dispensing a second pulse of the second precursor in the second region to flow radially outward.

摘要翻译： 在微器件工件上形成层的方法包括在工件的第一区域处分配第一前体的第一脉冲以朝向工件的第二区域流动。 工件的第二区域相对于工件的第一区域径向向外定位。 该方法的实施例还包括在终止第一前体的第一脉冲之后，在工件的第一区域分配吹扫气体的第一脉冲流向工件的第二区域。 此外，该实施例还包括在工件的第二区域处分配第一前体的第二脉冲，以在工件的第一区域中分配吹扫气体的第一脉冲同时径向向外流动。 吹扫气体的第一脉冲在工件的第一区域处终止，并且第一前体的第二脉冲在第二区域终止。 在该阶段，该方法还包括在工件的第一区域处分配第二前体的第一脉冲以朝向第二区域径向向外流动，并且在工件的第二区域处分配吹扫气体的第二脉冲以流动 与第一区域中的第二前体的第一脉冲同时径向向外。 该过程的单个循环还可以包括将终止第二前体的第一脉冲之后的吹扫气体的第三脉冲分配到工件的第一区域上以径向向外流动，并且同时分配第二前体的第二脉冲 第二区域径向向外流动。

公开(公告)号：US06835980B2

公开(公告)日：2004-12-28

申请号：US10389910

申请日：2003-03-18

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： H01L2976

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

摘要翻译： 使用原子层沉积（ALD）工艺参数在半导体器件中在衬底上沉积薄膜的方法将衬底暴露于至少一种粘附材料，其量足以使材料吸附到衬底上，从而形成起始层 。 引发层呈现至少一个第一反应性部分，然后使用原子层沉积条件与至少一种第一反应材料进行化学反应以形成第二反应性部分。 然后在足以在起始层上形成反应层的工艺条件下，将第二反应性部分与至少一种第二反应材料化学反应。 可以重复该过程以在起始层上形成连续的反应层。 构成起始层的粘合材料优选为原子层沉积参数基本上不劣化的材料。 起始层与一个或多个反应层一起构成最终的膜。

公开(公告)号：US06355561B1

公开(公告)日：2002-03-12

申请号：US09716288

申请日：2000-11-21

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

公开(公告)号：US06559472B2

公开(公告)日：2003-05-06

申请号：US10043199

申请日：2002-01-14

申请人： Gurtej Sandhu ,  Garo J. Derderian

发明人： Gurtej Sandhu ,  Garo J. Derderian

IPC分类号： H01L2906

CPC分类号： H01L21/76843 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28167 ,  H01L21/28562 ,  H01L21/31612 ,  H01L21/76868 ,  H01L29/51

摘要： A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

摘要翻译： 使用原子层沉积（ALD）工艺参数在半导体器件中在衬底上沉积薄膜的方法将衬底暴露于至少一种粘附材料，其量足以使材料吸附到衬底上，从而形成起始层 。 引发层呈现至少一个第一反应性部分，然后使用原子层沉积条件与至少一种第一反应材料进行化学反应以形成第二反应性部分。 然后在足以在起始层上形成反应层的工艺条件下，将第二反应性部分与至少一种第二反应材料化学反应。 可以重复该过程以在起始层上形成连续的反应层。 构成起始层的粘合材料优选为原子层沉积参数基本上不劣化的材料。 起始层与一个或多个反应层一起构成最终的膜。

公开(公告)号：US10515801B2

公开(公告)日：2019-12-24

申请号：US12908206

申请日：2010-10-20

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

摘要： Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.

公开(公告)号：US09196753B2

公开(公告)日：2015-11-24

申请号：US13089648

申请日：2011-04-19

申请人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

发明人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

IPC分类号： H01L27/108 ,  H01L29/872 ,  H01L27/28 ,  H01L45/00 ,  H01L27/102 ,  H01L29/885 ,  H01L27/22 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00

CPC分类号： H01L29/872 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/285 ,  H01L29/885 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

摘要翻译： 为选择装置提供方法，装置和系统，所述选择装置可以包括形成在第一电极上的至少一个半导体材料的半导体叠层，其中半导体叠层可以具有约700埃（或更小）的厚度。 所述至少一个半导体材料中的每一个可以具有约4电子伏（eV）或更小的相关带隙，并且可以在半导体叠层上形成第二电极。

公开(公告)号：US08946907B2

公开(公告)日：2015-02-03

申请号：US13526225

申请日：2012-06-18

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L23/52 ,  H01L21/311 ,  H01L21/033

CPC分类号： H01L23/5226 ,  H01L21/0337 ,  H01L21/31144 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.

摘要翻译： 提供了一种用于在半导体组件中产生结构的方法。 该方法包括将孔蚀刻到电介质层中，并在该介电层上施加聚合物层。 均匀地施加聚合物层，并根据孔的几何形状，或者存在或不存在生长促进材料，以不同的速率填充孔。 该聚合物产生用于蚀刻间隔物之间​​的附加结构的间隔物。 该方法能够实现比当前光刻技术更小的结构。

公开(公告)号：US08796661B2

公开(公告)日：2014-08-05

申请号：US12917348

申请日：2010-11-01

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu

IPC分类号： H01L47/00 ,  H01L21/06 ,  H01L21/20

CPC分类号： H01L45/085 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/14 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

摘要： A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed.

摘要翻译： 形成非易失性存储单元的方法包括形成具有第一电流导电材料的第一电极和从第一电流导电材料向外突出的周向自对准的第二导电材料。 第二电流导电材料的组成不同于第一电流导电材料。 可编程区域形成在第一电流导电材料之上并且在第一电极的突出的第二电流导电材料之上。 在可编程区域上形成第二电极。 在一个实施例中，可编程区域是离子传导材料，并且第一和第二电极中的至少一个电极具有直接抵靠离子导电材料的电化学活性表面。 公开了其它方法和结构方面。