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公开(公告)号：US20230333478A1
公开(公告)日：2023-10-19
申请号：US18214200
申请日：2023-06-26
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
IPC: G03F7/30 , G03F7/16 , G03F7/039 , C08F220/28 , C08F220/18 , G03F7/075 , H01L21/027 , G03F7/32 , G03F7/40 , G03F7/038 , G03F7/38
CPC classification number: G03F7/30 , G03F7/16 , G03F7/0392 , C08F220/283 , G03F7/0397 , C08F220/1807 , G03F7/0758 , H01L21/027 , G03F7/32 , G03F7/40 , G03F7/0382 , G03F7/38 , G03F7/325
Abstract: An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance.
The pattern forming method of the present invention is a pattern forming method including a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a developing step of developing the exposed resist film using a developer, in which the actinic ray-sensitive or radiation-sensitive resin composition contains an acid-decomposable resin represented by a specific structure; and as the developer, a chemical liquid containing an organic solvent, alcohol impurities, and metal impurities containing at least metal atoms is used, the total content of the alcohol impurities being 0.01 mass ppb to 1000 mass ppm with respect to the total mass of the chemical liquid.-
公开(公告)号：US20230145012A1
公开(公告)日：2023-05-11
申请号：US18152889
申请日：2023-01-11
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
CPC classification number: C11D1/62 , C11D3/2003 , C11D3/30 , C11D1/42
Abstract: There is provided a cleaning liquid for a semiconductor substrate, which has excellent cleaning performance with respect to a semiconductor substrate including a metal film after CMP and has a small surface roughness of a metal film after cleaning. The cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate, which is used for cleaning a semiconductor substrate, including a compound represented by Formula (1), a compound represented by Formula (2), a primary amino alcohol having a primary amino group or a secondary amino group, a tertiary amine; and a solvent.
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公开(公告)号：US20230143521A1
公开(公告)日：2023-05-11
申请号：US18147961
申请日：2022-12-29
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
IPC: C11D11/00 , C11D1/72 , C11D1/62 , C11D3/20 , C11D3/33 , C11D3/36 , C11D3/30 , C11D3/28 , C11D3/37 , C11D3/39 , H01L21/02 , B01D71/34 , B01D71/36 , B01D71/26 , B01D71/66 , B01D69/08
CPC classification number: C11D11/0047 , B01D69/08 , B01D71/26 , B01D71/34 , B01D71/36 , B01D71/66 , C11D1/62 , C11D1/721 , C11D3/28 , C11D3/30 , C11D3/33 , C11D3/361 , C11D3/2079 , C11D3/2082 , C11D3/2086 , C11D3/3765 , C11D3/3942 , H01L21/02074
Abstract: An object of the present invention is to provide a method for producing a treatment liquid, having excellent filterability.
The method for producing a treatment liquid of an embodiment of the present invention is a method for producing a treatment liquid, the method including filtering an object to be purified including a surfactant, using a first filter having a first filter medium, to produce a treatment liquid for a semiconductor substrate, in which the first filter medium includes at least one selected from the group consisting of a nylon, a polyallyl sulfonic acid, a perfluoroalkoxy alkane which has been subjected to a hydrophilization treatment, a polytetrafluoroethylene which has been subjected to a hydrophilization treatment, a polyolefin which has been subjected to a hydrophilization treatment, and a polyvinylidene fluoride which has been subjected to a hydrophilization treatment, and the surfactant includes at least one selected from the group consisting of a nonionic surfactant including a group represented by Formula (1) and an anionic surfactant including a group represented by Formula (1).
Formula (1) (LO)n
L represents an alkylene group, and n represents 3 to 55.-
公开(公告)号：US20220275519A1
公开(公告)日：2022-09-01
申请号：US17748536
申请日：2022-05-19
Applicant: FUJIFILM Corporation
Inventor： Kohei HAYASHI , Tetsuya KAMIMURA
Abstract: An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.
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公开(公告)号：US20220121123A1
公开(公告)日：2022-04-21
申请号：US17561999
申请日：2021-12-27
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Tetsuya SHIMIZU , Satoru MURAYAMA
Abstract: A method for manufacturing an electronic device, the method including performing a treatment using a treatment liquid for manufacturing a semiconductor, the treatment liquid for manufacturing a semiconductor includes: a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; water; and one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A ratio T1 of a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms is in a range from 1 ppt to 1 ppm.
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Patent Agency Ranking
公开(公告)号：US20220098444A1
公开(公告)日：2022-03-31
申请号：US17547180
申请日：2021-12-09
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
IPC: C09G1/02 , H01L21/304
Abstract: The present invention provides a polishing liquid which has a good polishing speed and can suppress the occurrence of corrosion and scratches on a surface to be polished in a case of being applied to CMP of an object to be polished having a cobalt-containing film. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid including colloidal silica, a passivation film forming agent having a C log P value of 1.5 to 3.8, a polymer compound, and hydrogen peroxide, in which a pH is 2.0 to 4.0.
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公开(公告)号：US20210223698A1
公开(公告)日：2021-07-22
申请号：US17219805
申请日：2021-03-31
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
Abstract: The present invention provides a chemical liquid which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where the chemical liquid is used as a developer or rinsing solution. The present invention also provides a chemical liquid storage body, a resist pattern forming method, and a semiconductor chip manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.
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公开(公告)号：US20210130084A1
公开(公告)日：2021-05-06
申请号：US17141335
申请日：2021-01-05
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tetsuya KAMIMURA , Satomi TAKAHASHI , Tadashi OOMATSU
Abstract: The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction. The maximum value is 0.5 to 3.0, and an average surface roughness of the surface of the member is equal to or lower than 10 nm.
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公开(公告)号：US20210005473A1
公开(公告)日：2021-01-07
申请号：US17028282
申请日：2020-09-22
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Tomonori Takahashi
Abstract: The present invention provides a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removal performance as well as excellent anticorrosion performance for an object to be treated. The treatment liquid of an aspect of the present invention is a treatment liquid for a semiconductor device contains one or more hydroxylamine compounds selected from the group consisting of hydroxylamine and a hydroxylamine salt, an organic basic compound, an alcohol-based solvent, and a surfactant, in which a content of the alcohol-based solvent with respect to a total mass of the treatment liquid is 40% to 85% by mass, and a pH is 8 or higher.
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公开(公告)号：US20200368691A1
公开(公告)日：2020-11-26
申请号：US16991158
申请日：2020-08-12
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Satomi TAKAHASHI , Tadashi OMATSU , Tetsuya SHIMIZU
IPC: B01D61/58 , B01D71/26 , B01D69/02 , B01D65/02 , B01D71/56 , B01D71/28 , B01D71/68 , B01D71/32 , B01D3/14 , H01L21/67
Abstract: A filtering device is used for obtaining a chemical liquid by purifying a liquid to be purified and includes an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path that includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion. The filter A has a porous membrane made of ultra-high-molecular-weight polyethylene and a resin layer disposed to cover at least a portion of the surface of the porous membrane, and the resin layer includes a resin having a neutral group or an ion exchange group.
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