公开(公告)号：US07705283B2

公开(公告)日：2010-04-27

申请号：US11436086

申请日：2006-05-18

申请人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： G01J1/44 ,  H03F3/08 ,  H01L31/112 ,  G01R19/00 ,  H01L31/00 ,  H04N3/14

CPC分类号： G01J1/18 ,  G01J1/44 ,  G01J2001/4406 ,  G09G3/3611 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2360/145 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14643 ,  H01L27/14692 ,  H01L31/101 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.

摘要翻译： 本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。 本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置 开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。 通过本发明，可以检测从弱光到强光的光。

公开(公告)号：US20090126790A1

公开(公告)日：2009-05-21

申请号：US12355187

申请日：2009-01-16

申请人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

发明人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

IPC分类号： H01L31/0232 ,  H01L31/0224

CPC分类号： H01L31/1133 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14687

摘要： A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.

摘要翻译： 提供了具有可以抑制静电放电损坏的结构的光传感器。 通常，在光接收区域的整个表面上形成透明电极; 然而，在本发明中，不形成透明电极，并且使用光电转换层的p型半导体层和n型半导体层作为电极。 因此，在根据本发明的光电传感器中，电阻增加可以抑制静电放电损坏。 此外，用作电极的p型半导体层和n型半导体层的位置被保留; 因此，电阻增加，并且可以提高耐受电压。

公开(公告)号：US07501306B2

公开(公告)日：2009-03-10

申请号：US11523642

申请日：2006-09-20

申请人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

发明人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1446 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

摘要翻译： 根据本发明的半导体器件的制造方法包括以下步骤：在第一衬底上依次形成金属膜，绝缘膜和非晶半导体膜; 使金属膜和非晶半导体膜结晶化; 通过使用结晶化的半导体膜作为活性区域形成第一半导体元件; 通过使用粘合剂将支撑件附接到第一半导体元件; 导致金属膜和绝缘膜之间的分离; 将第二基板附接到所述分离的绝缘膜; 通过去除粘合剂来分离载体; 在所述第一半导体元件上形成非晶半导体膜; 以及使用所述非晶半导体膜形成作为有源区的第二半导体元件。

公开(公告)号：US07449718B2

公开(公告)日：2008-11-11

申请号：US10749552

申请日：2004-01-02

申请人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

发明人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1446 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

摘要翻译： 根据本发明的半导体器件的制造方法包括以下步骤：在第一衬底上依次形成金属膜，绝缘膜和非晶半导体膜; 使金属膜和非晶半导体膜结晶化; 通过使用结晶化的半导体膜作为活性区域形成第一半导体元件; 通过使用粘合剂将支撑件附接到第一半导体元件; 导致金属膜和绝缘膜之间的分离; 将第二基板附接到所述分离的绝缘膜; 通过去除粘合剂来分离载体; 在所述第一半导体元件上形成非晶半导体膜; 以及使用所述非晶半导体膜形成作为有源区的第二半导体元件。

公开(公告)号：US20080265351A1

公开(公告)日：2008-10-30

申请号：US12078196

申请日：2008-03-27

申请人： Yohei Monma ,  Daiki Yamada ,  Hidekazu Takahashi ,  Yuusuke Sugawara ,  Kazuo Nishi

发明人： Yohei Monma ,  Daiki Yamada ,  Hidekazu Takahashi ,  Yuusuke Sugawara ,  Kazuo Nishi

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2224/13 ,  H01L2924/07811 ,  H01L2924/00

摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.

摘要翻译： 在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。 然后，具有连接端子的插入件被接​​合到半导体电路部分。 之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。 然后，将模塑树脂在预定条件下加热以硬化。

公开(公告)号：US07365004B2

公开(公告)日：2008-04-29

申请号：US11033380

申请日：2005-01-12

申请人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

发明人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

IPC分类号： H01L21/4763

CPC分类号： H01L31/03921 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/50

摘要： The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The constitution of the invention is characterized by comprising: a first step forming the lower electrode and the semiconductor layer on the insulating substrate by laminating; a second step forming a protective film on surface of the semiconductor; a third step forming an opening portion at the semiconductor layer, or the semiconductor layer and the lower electrode by laser beam process after the second step; and a fourth step removing the protective film.

摘要翻译： 本发明旨在防止太阳能电池的特性的下降，并且通过激光束工艺在产生太阳能电池的方法中，在激光束工艺产生的粉末状态的颗粒产生的产率产生。 本发明的结构的特征在于包括：通过层压在绝缘基板上形成下电极和半导体层的第一步骤; 在半导体的表面上形成保护膜的第二步骤; 在第二步骤之后通过激光束处理在半导体层形成开口部分的第三步骤或半导体层和下部电极; 以及除去保护膜的第四步骤。

公开(公告)号：US20060219293A1

公开(公告)日：2006-10-05

申请号：US11362913

申请日：2006-02-28

申请人： Hisao Morooka ,  Takeshi Echizenya ,  Hirokazu Fujioka ,  Saki Takahashi ,  Kazuo Nishi

发明人： Hisao Morooka ,  Takeshi Echizenya ,  Hirokazu Fujioka ,  Saki Takahashi ,  Kazuo Nishi

IPC分类号： H01L31/00

CPC分类号： H01L31/075 ,  H01L31/022425 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

摘要： The present invention provides a solar cell whose external color can be adjusted so that redness is suppressed. In the case where a photoelectric conversion layer contains amorphous silicon, an optical absorption layer is provided between the photoelectric conversion layer and a reflecting electrode layer. The optical absorption layer has a light absorbing property mainly in a long wavelength range, while the photoelectric conversion layer (amorphous silicon) has a selective light absorbing property mainly in a short/medium wavelength range. Incident light (solar light) passed through the photoelectric conversion layer further passes through the optical absorption layer and, after that, is reflected by the reflecting electrode layer. That is, remaining light of the incident light absorbed by the optical absorption layer and the photoelectric conversion layer is reflected by the reflecting electrode layer. Consequently, redness of the reflection light can be suppressed more than in the case where the optical absorption layer is not provided between the photoelectric conversion layer and the reflecting electrode layer.

公开(公告)号：US06949463B2

公开(公告)日：2005-09-27

申请号：US10756299

申请日：2004-01-14

申请人： Hisao Morooka ,  Hiroshi Yamada ,  Kazuo Nishi

发明人： Hisao Morooka ,  Hiroshi Yamada ,  Kazuo Nishi

IPC分类号： H01L31/04 ,  C23C16/42 ,  C23C16/505 ,  H01L21/285 ,  H01L21/44

CPC分类号： C23C16/42 ,  C23C16/505 ,  H01L21/28556 ,  Y02E10/548

摘要： A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.

摘要翻译： 太阳能电池包括依次层压在基板上的基板和金属电极层，p-i-n结和透明电极层。 p-i-n结包括依次层叠的n层，i层和p层。 i层由根据本发明的含有氢的非晶硅化硅膜制成，并且通过将铁蒸气供给到硅烷型气体和氢气的原料气体的等离子体中而形成在n层上 混合 在i层中，硅原子和/或铁原子的悬挂键用氢终止，由此可以消除在非晶硅化铁膜中可能发生的多个陷阱水平。

公开(公告)号：US20050087225A1

公开(公告)日：2005-04-28

申请号：US10500934

申请日：2003-01-10

申请人： Hisao Morooka ,  Kazuo Nishi

发明人： Hisao Morooka ,  Kazuo Nishi

IPC分类号： H01L31/075 ,  H01L31/00

CPC分类号： H01L31/075 ,  Y02E10/548

摘要： On a substrate 1 is formed a first transparent electrode layer 3, on which a p-type semiconductor film 5, an i-type semiconductor film 6 and an n-type semiconductor film 7 are successively formed to constitute an electric power generating layer. On the n-type semiconductor film 7 is formed a second transparent electrode layer 8, on which a back electrode layer 9 is formed. Moreover, an intermediate layer 4 made of a given material is formed between the first transparent electrode layer 3 and the p-type semiconductor film 5 to complete a photovoltaic element 40 with high electric power generating efficiency (conversion efficiency).

摘要翻译： 在基板1上形成有第一透明电极层3，其上依次形成p型半导体膜5，i型半导体膜6和n型半导体膜7以构成发电层。 在n型半导体膜7上形成有形成背面电极层9的第二透明电极层8。 此外，在第一透明电极层3和p型半导体膜5之间形成由给定材料制成的中间层4，以完成具有高发电效率（转换效率）的光电元件40。

公开(公告)号：US06566594B2

公开(公告)日：2003-05-20

申请号：US09824214

申请日：2001-04-03

申请人： Tatsuji Sano ,  Hisao Morooka ,  Kazuo Nishi

发明人： Tatsuji Sano ,  Hisao Morooka ,  Kazuo Nishi

IPC分类号： H01L31075

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked in turn on a transparent substrate. Then, an intermediate layer is provided between the second transparent conductive film and the p-type semiconductor layer so as to cover the first transparent conductive film and the second transparent conductive film.

摘要翻译： 在根据本发明的光电元件中，依次将第一透明导电膜，第二透明导电膜，p型半导体膜，本征半导体层，n型半导体层和背面电极堆叠在 透明基板。 然后，在第二透明导电膜和p型半导体层之间设置中间层，以覆盖第一透明导电膜和第二透明导电膜。