Abstract:
A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode including an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion includes an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.
Abstract:
A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N═C—N(R1)-; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5≦Dmax(UV)/Dmin(UV)≦1.1 a-1) wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300≦(B−C)/A≦20000 b-1) wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).
Abstract:
A norbornene-based polymer contains at least one kind of a repeating unit represented by the following formula (I): wherein R1 and R2 each represent a hydrogen atom, an alkyl group which may possess a substituent group or an aryl group which may possess a substituent group, L and L′ each represent a bivalent linking group or a single bond, and A and A′ each represent an aromatic group.
Abstract:
When the USB power supply (VBUS) of the USB interface is used as the power supply for driving a conventional optical disc apparatus or disc apparatus, the supplied current exceeds the standard of USB.An optical disc apparatus is provided with: a spindle motor for rotating and driving an optical disc; a feed motor for shifting an optical pick-up in the direction of the radius of an optical disc, the optical pick-up carrying out either read-out of data that has been written in onto an optical disc or write-in of data onto an optical disc; and an actuator for minutely correcting the position of an object lens which is provided in the above described optical pick-up and which irradiates an optical disc with a laser beam which is collected, wherein a conversion circuit for changing a signal voltage of a servo processor, which is transmitted to a driving circuit of the above described spindle motor, is placed between the above described driving circuit and the above described servo processor for controlling the above described driving circuit along a signal line, and the above described conversion circuit can be controlled by a CPU provided in the above described optical disc apparatus.
Abstract:
A multilayered printed wiring board includes a plurality of insulating layers; a plurality of wiring layers which are located between the corresponding adjacent insulating layers; and a plurality of interlayer connection conductors for electrically connecting the wiring layers through the insulating layers; wherein a cavity is formed through one or more of the insulating layers so as to insert a first electric/electronic component and an area for embedding a second electric/electronic component is defined for the insulating layers.
Abstract:
A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.
Abstract:
A silver halide color photographic photosensitive material that has, on a support, at least one yellow color-forming photosensitive silver halide emulsion layer, at least one magenta color-forming photosensitive silver halide emulsion layer, and at least one cyan color-forming photosensitive silver halide emulsion layer,wherein at least one specific yellow or magenta dye-forming coupler and at least one compound represented by formula (Ph) are contained in the same layer: wherein Rb1 represents a specific functional group; and Rb2 to Rb5 each independently represent a hydrogen or halogen atom, or a specific functional group.
Abstract:
A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N═C—N(R1)-; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5≦Dmax(UV)/Dmin(UV)≦1.1 a-1): wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300≦(B−C)/A≦20000 b-1): wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).
Abstract:
A compound represented by formula (I): Formula (I) wherein Z1 and Z2 each are atoms necessary for forming an aromatic ring; V1 and V2 each are a substituent W1 or W2; when at least one V1 is W1, at least one V2 is W2, or when at least one V1 is W2, at least one V2 is W1; r is 1 to 4; s is 1 to 4; M1 is a counter ion; m1 is the number necessary for neutralizing charge; W1 is a hydroxyl, primary- or secondary- or tertiary-amino, acylamino, or sulfonamido group; W2 is a nitro, cyano, alkoxycarbonyl, aryloxycarbonyl, alkyl- or aryl-sulfonyl, carbamoyl, sulfamoyl, alkenyl, alkynyl, aryl, heterocyclic, sulfo, carboxyl, heterocyclic oxy, ammonio, alkyl- or aryl-sulfinyl, alkyl- or aryl-sulfonyl, acyl, or aryl- or heterocyclic-azo group; and the aromatic ring may have a substituent other than V1 and V2.
Abstract:
A dye-forming coupler of the formula (I). A silver halide photographic light-sensitive material that contains at least one dye-forming coupler of the formula (I). A method for producing an azomethine dye, which method comprises using a compound of the formula (I): wherein E is an aryl, heterocyclic, or —C(═O)W group, in which W is a nitrogen-containing heterocyclic group, Z is an aryl or heterocyclic group, and X and Y each independently are ═O, ═S or ═N—R, in which R is a substituent, with the proviso that when E is an aryl or heterocyclic group, X and Y each are ═O, and that when E is a —C(═O)W group, Z is a substituted aryl group.