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    SEMICONDUCTOR DEVICES WITH UNDERFILL CONTROL FEATURES, AND ASSOCIATED SYSTEMS AND METHODS
    92.
    发明申请
    SEMICONDUCTOR DEVICES WITH UNDERFILL CONTROL FEATURES, AND ASSOCIATED SYSTEMS AND METHODS 有权

    公开(公告)号：US20180122762A1

    公开(公告)日：2018-05-03

    申请号：US15339693

    申请日：2016-10-31

    Applicant: Micron Technology, Inc.

    Inventor： Suresh Yeruva ,  Kyle K. Kirby ,  Owen R. Fay ,  Sameer S. Vadhavkar

    IPC: H01L23/00 ,  H01L23/24 ,  H01L21/56

    Abstract: Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

    Use of pre-channeled materials for anisotropic conductors
    99.
    发明授权
    Use of pre-channeled materials for anisotropic conductors 有权

    公开(公告)号：US12051670B2

    公开(公告)日：2024-07-30

    申请号：US17490224

    申请日：2021-09-30

    Applicant: Micron Technology, Inc.

    Inventor： Mark E. Tuttle ,  John F. Kaeding ,  Owen R. Fay ,  Eiichi Nakano ,  Shijian Luo

    IPC: H01L23/49 ,  H01L23/00

    CPC classification number: H01L24/32 ,  H01L24/29 ,  H01L24/33 ,  H01L2224/29078 ,  H01L2224/32105 ,  H01L2224/3303 ,  H01L2224/33107 ,  H01L2224/3313 ,  H01L2924/381

    Abstract: A semiconductor device assembly has a first substrate, a second substrate, and an anisotropic conductive film. The first substrate includes a first plurality of connectors. The second substrate includes a second plurality of connectors. The anisotropic conductive film is positioned between the first plurality of connectors and the second plurality of connectors. The anisotropic conductive film has an electrically insulative material and a plurality of interconnects laterally separated by the electrically insulative material. The plurality of interconnects forms electrically conductive channels extending from the first plurality of connectors to the second plurality of connectors. A method includes connecting the plurality of interconnects to the first plurality of connectors and the second plurality of connectors, such that the electrically conductive channels are operable to conduct electricity from the first substrate to the second substrate. The method may include passing electrical current through the plurality of interconnects.

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