Abstract:
Techniques and mechanisms to mitigate fixed pattern noise in image sensor data. In an embodiment, readout circuitry includes an adaptive analog-to-digital converter (ADC) comprising a differential amplifier and a feedback path coupled across the differential amplifier, where the ADC is to receive a ramp signal, a control signal associated with a transition rate of the ramp signal, and an analog signal generated by one or more pixels. In another embodiment, the feedback path and/or one or more other circuit elements coupled to the differential amplifier are configured, based on the control signal, to provide one of multiple loop gains with the differential amplifier. The ADC provides a digital output to determine a comparison based on the ramp signal and the analog signal.
Abstract:
A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.
Abstract:
An image sensor system includes an image sensor and a host controller. The image sensor includes a power input terminal, a data terminal, a clock input terminal, and a ground terminal. The host controller is coupled to the power input terminal to provide power to the image sensor, the data terminal to receive analog image data from the image sensor, the clock input terminal to provide a clock signal to the image sensor, and the ground terminal. The ground terminal serves as a common reference between the image sensor and one or more circuits of the host controller. The system also includes logic that is configured to transfer the analog image data from the image sensor to the host controller through the data terminal of the image sensor and to transfer one or more digital control signals between the image sensor and the host controller through the data terminal.
Abstract:
An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
Abstract:
A time of flight imaging system includes a light source coupled to emit light pulses to an object in response a light source modulation signal generated in response to a reference modulation signal. Each pixel cell of a time of flight pixel cell array is coupled to sense light pulses reflected from the object in response a pixel modulation signal. A programmable pixel delay line circuit is coupled to generate the pixel modulation signal with a variable pixel delay programmed in response to a pixel programming signal. A control circuit is coupled to receive pixel information from the time of flight pixel array representative of the sensed reflected light pulses. The control circuit is coupled to vary the pixel programming signal during a calibration mode to synchronize the light pulses emitted from the light source with the pulses of the pixel modulation signal.
Abstract:
An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
Abstract:
An image sensor read out circuit includes a first current mirror circuit in which a second current conducted through a second current path is controlled in response to a first current conducted through the first current path. The second current is conducted through an amplifier transistor of a pixel circuit. A first current source coupled to the first current path to provide a substantially constant current component of the first current. A second current source coupled to a power supply rail of the pixel circuit and coupled to the first current path to provide a ripple current component of the first current. The ripple current component provided by the second current source is responsive to a ripple in the power supply rail. The first current is responsive to a sum of the currents from the first and second current sources.
Abstract:
A process including forming an a backside-illuminated (BSI) image sensor in a substrate, the image sensor including a pixel array formed in or near a front surface of the substrate and one or more circuit blocks formed in the substrate near the pixel array, each circuit block including at least one support circuit. An interconnect layer is formed on the front surface of the substrate that includes a dielectric within which are embedded traces and vias, wherein the traces and vias electrically couple the pixel array to at least one of the one or more support circuits. An isolation trench is formed surrounding at least one of the one or more circuit blocks to isolate the pixel array and other circuit blocks from noise generated by the at least one support circuit within the circuit block surrounded by the isolation trench. Other embodiments are disclosed and claimed.
Abstract:
An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.