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101 条记录 (耗时 0.044 秒)

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    91.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180197975A1

    公开(公告)日：2018-07-12

    申请号：US15860001

    申请日：2018-01-02

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Yasuhiro JINBO

    IPC分类号： H01L29/66 ,  H01L21/78 ,  H01L51/00 ,  H01L27/32

    CPC分类号： H01L29/66969 ,  H01L21/7806 ,  H01L27/3244 ,  H01L29/786 ,  H01L51/0097 ,  H01L2227/323

    摘要： A manufacturing method of a semiconductor device including a step of forming a silicon layer over a formation substrate, a step of forming a resin layer over the silicon layer, a step of forming a transistor over the resin layer, a step of forming a conductive layer over the silicon layer and the resin layer, and a step of separating the formation substrate and the transistor. The resin layer has an opening over the silicon layer. The conductive layer is in contact with the silicon layer through the opening in the resin layer. In the step of separating the formation substrate and the transistor, the silicon layer is irradiated with light, so that silicon contained in the silicon layer reacts with a metal contained in the conductive layer, and a metal silicide layer is formed.

    METHOD FOR MANUFACTURING DISPLAY DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
    96.
    发明申请
    METHOD FOR MANUFACTURING DISPLAY DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权
    用于制造显示器件的方法和用于制造电子器件的方法

    公开(公告)号：US20160351641A1

    公开(公告)日：2016-12-01

    申请号：US15163072

    申请日：2016-05-24

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Minato ITO ,  Yasuhiro JINBO

    IPC分类号： H01L27/32 ,  H01L51/00 ,  H01L27/12

    CPC分类号： H01L27/1259 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3216 ,  H01L27/3272 ,  H01L27/3276 ,  H01L27/3297 ,  H01L51/5265 ,  H01L51/56 ,  H01L2227/323

    摘要： A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

    摘要翻译： 提供一种制造不容易损坏电极的显示装置的方法。 在第一步骤中，在第一基板上设置端子电极，布线和功能层; 端子电极，布线和功能层彼此电连接; 绝缘层设置在端子电极上; 在端子电极和绝缘层上设置第一层; 粘合剂层夹在第一基板和第二基板之间; 第二基板和粘合剂层包括与第一层的一部分重叠的第一开口; 并且所述绝缘层在顶视图中包括在所述第一开口内的第二开口。 在第二步骤中，通过向第一层发射具有高升华性质的颗粒来去除第一层的一部分，从而露出端子电极。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    97.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20160329531A1

    公开(公告)日：2016-11-10

    申请号：US15214989

    申请日：2016-07-20

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Masafumi MORISUE ,  Yasuhiro JINBO ,  Gen FUJII ,  Hajime KIMURA

    IPC分类号： H01L51/56 ,  H01L29/786 ,  H01L51/00 ,  G02F1/1339 ,  H01L31/18 ,  G02F1/167 ,  G02F1/1333 ,  G02F1/1337 ,  H01L27/32 ,  H01L31/0392

    摘要： A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

    摘要翻译： 一种制造半导体器件的方法包括：在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后，将元件形成层与具有透光性的基板分离。

    LIGHT-EMITTING DEVICE
    99.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150233557A1

    公开(公告)日：2015-08-20

    申请号：US14618131

    申请日：2015-02-10

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoya AOYAMA ,  Yasuhiro JINBO ,  Yoshiharu HIRAKATA ,  Shunpei YAMAZAKI

    IPC分类号： F21V21/14 ,  F21L4/00 ,  H05B37/02 ,  F21S9/02 ,  F21S4/00

    CPC分类号： F21L4/00 ,  F21S4/22 ,  F21V15/015 ,  F21V21/145 ,  F21W2121/00 ,  F21Y2105/00 ,  F21Y2107/40 ,  F21Y2115/10 ,  F21Y2115/20 ,  H05B37/0272

    摘要： An object of this invention is to provide a highly portable light-emitting device or a highly browsable light-emitting device. The light-emitting device includes a joint portion, and a plurality of light-emitting units apart from each other with the joint portion positioned therebetween. The joint portion and the light-emitting units are flexible. The joint portion can be bent to a curvature radius smaller than a curvature radius to which the light-emitting unit can be bent. The light-emitting unit is supplied with a signal through a side not adjacent to the joint portion or is supplied with a signal by wireless communication.

    摘要翻译： 本发明的目的是提供一种高度便携式的发光装置或高度可浏览的发光装置。 发光装置包括接合部分和多个彼此分开的发光单元，其中接合部分位于它们之间。 接合部和发光单元是柔性的。 可以将接合部弯曲成比发光单元弯曲的曲率半径小的曲率半径。 发光单元通过不与接合部分相邻的一侧提供信号，或者通过无线通信被提供信号。