公开(公告)号：US20240429319A1

公开(公告)日：2024-12-26

申请号：US18817534

申请日：2024-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

公开(公告)号：US20240155870A1

公开(公告)日：2024-05-09

申请号：US18280517

申请日：2022-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Yasuhiro JINBO ,  Kenichi OKAZAKI

IPC: H10K59/12 ,  H10K71/10 ,  H10K71/20 ,  H10K71/40

CPC classification number: H10K59/1201 ,  H10K71/10 ,  H10K71/231 ,  H10K71/40

Abstract: Manufacturing equipment in which processes from processing to sealing of an organic compound film can be successively performed is provided. A patterning process of a light-emitting device and a sealing process that is performed to prevent the surface and side surface of an organic layer from being exposed to the air can be performed successively, whereby a minute light-emitting device with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can be incorporated in in-line manufacturing equipment where apparatuses are arranged in the order of processes for a light-emitting device, resulting in high throughput manufacturing.

公开(公告)号：US20240065035A1

公开(公告)日：2024-02-22

申请号：US18270770

申请日：2021-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuhiro JINBO ,  Yuichi YANAGISAWA

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/123 ,  H10K59/80 ,  H10K71/60

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/123 ,  H10K59/873 ,  H10K59/879 ,  H10K71/60

Abstract: A display device capable of displaying a high-quality image is provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first lower electrode, a first light-emitting layer over the first lower electrode, and a first upper electrode over the first light-emitting layer. The second light-emitting element includes a second lower electrode, a second light-emitting layer over the second lower electrode, and a second upper electrode over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is between the first upper electrode and first light-emitting layer and the second upper electrode and second light-emitting layer. The first upper electrode includes a region projecting from a side surface of the first light-emitting layer. The second upper electrode includes a region projecting from a side surface of the second light-emitting layer.

公开(公告)号：US20240038529A1

公开(公告)日：2024-02-01

申请号：US18020288

申请日：2021-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/0234

Abstract: A method for depositing a metal oxide is provided. The deposition method of a metal oxide includes a first step of introducing a first precursor into a first chamber, a second step of introducing a second precursor into the first chamber, a third step of introducing a third precursor into the first chamber, a fourth step of introducing an oxidizer in a plasma state into the first chamber after each of the first step, the second step, and the third step, and a fifth step of performing microwave treatment. Performing each of the first to fourth steps one or more times is regarded as one cycle, and the fifth step is performed in a second chamber after the one cycle is repeated a plurality of times. The first to third precursors are different kinds of precursors, the microwave treatment is performed using an oxygen gas and an argon gas, the metal oxide includes a crystal region, and a c-axis of the crystal region is substantially parallel to a normal vector of a surface where the metal oxide is formed or a normal vector of a surface of the metal oxide.

公开(公告)号：US20230389332A1

公开(公告)日：2023-11-30

申请号：US18032651

申请日：2021-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Toshikazu OHNO ,  Yuichi SATO ,  Sachie ETO ,  Shinobu KAWAGUCHI

IPC: H10B53/30

CPC classification number: H10B53/30

Abstract: A ferroelectric device having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor over a first insulator, a ferroelectric layer over the first conductor, a second conductor over the ferroelectric layer, a second insulator over the second conductor, and a third insulator surrounding the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or fixing hydrogen, and the third insulator has a function of inhibiting hydrogen diffusion.

公开(公告)号：US20230320000A1

公开(公告)日：2023-10-05

申请号：US18206134

申请日：2023-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu HIRAKATA ,  Yasuhiro JINBO ,  Shunpei YAMAZAKI

IPC: H05K5/00 ,  H10K50/84 ,  H10K59/121 ,  H10K77/10 ,  G09F9/30 ,  G06F1/16 ,  H01F1/147

CPC classification number: H05K5/0017 ,  H10K50/84 ,  H10K59/1213 ,  H10K77/111 ,  G09F9/301 ,  G06F1/1616 ,  H01F1/14708 ,  H01F1/14791 ,  H05K5/0086 ,  Y02E10/549 ,  H10K50/844

Abstract: A light-emitting device can be folded in such a manner that a flexible light-emitting panel is supported by a plurality of housings which are provided spaced from each other and the light-emitting panel is bent so that surfaces of adjacent housings are in contact with each other. Furthermore, in the light-emitting device, in which part or the whole of the housings have magnetism, the two adjacent housings can be fixed to each other by a magnetic force when the light-emitting device is used in a folded state.

公开(公告)号：US20230317832A1

公开(公告)日：2023-10-05

申请号：US18019924

申请日：2021-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yoichi IIKUBO ,  Yuji EGI ,  Yasuhiro JINBO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02631

Abstract: A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insulating film as water molecules, so that a hydrogen concentration in the insulating film is reduced. Note that the microwave treatment is preferably performed using an oxygen gas and an argon gas at a temperature range of higher than or equal to 200° C. and lower than or equal to 300° C., and the proportion of the flow rate of the oxygen gas to the total of the flow rate of the oxygen gas and the flow rate of the argon gas is preferably greater than 0 % and less than or equal to 50 %.

公开(公告)号：US20230274935A1

公开(公告)日：2023-08-31

申请号：US18109305

申请日：2023-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L21/8234

CPC classification number: H01L21/02565 ,  H01L21/02614 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/517 ,  H01L21/823412

Abstract: A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

公开(公告)号：US20230269949A1

公开(公告)日：2023-08-24

申请号：US18043669

申请日：2021-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Yuji EGI ,  Masahiro TAKAHASHI ,  Shuntaro KOCHI

IPC: H10B53/30 ,  H10B53/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H10B53/30 ,  H10B53/10 ,  H01L29/78696 ,  H01L29/7869 ,  H01L29/6675

Abstract: A material having favorable ferroelectricity is provided. An embodiment of the present invention is a metal oxide film including a first layer and a second layer. The first layer contains first oxygen and hafnium, and the second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other with the first oxygen positioned therebetween, and the second oxygen is bonded to the zirconium.

公开(公告)号：US20230110947A1

公开(公告)日：2023-04-13

申请号：US17904015

申请日：2021-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Yuji EGI ,  Tetsuya KAKEHATA

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/46

Abstract: A novel deposition method of a metal oxide is provided. The deposition method includes a first step of supplying a first precursor to a chamber; a second step of supplying a second precursor to the chamber; a third step of supplying a third precursor to the chamber; and a fourth step of introducing an oxidizer into the chamber after the first step, the second step, and the third step. The first to third precursors are different kinds of precursors, and a substrate placed in the chamber in the first to fourth steps is heated to a temperature higher than or equal to 300° C. and lower than or equal to decomposition temperatures of the first to third precursors.