公开(公告)号：US08389312B2

公开(公告)日：2013-03-05

申请号：US13367846

申请日：2012-02-07

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/22 ,  H01S2301/14

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US08213475B2

公开(公告)日：2012-07-03

申请号：US13209101

申请日：2011-08-12

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/323 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/3202 ,  H01S5/3211

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。 在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状 。 断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。 使用能够实现低阈值电流的频带转换的发射是可行的。

公开(公告)号：US08071405B2

公开(公告)日：2011-12-06

申请号：US12836281

申请日：2010-07-14

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/3202 ,  H01S5/3211

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。 在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状 。 断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。 使用能够实现低阈值电流的频带转换的发射是可行的。

公开(公告)号：US07883915B2

公开(公告)日：2011-02-08

申请号：US12429322

申请日：2009-04-24

申请人： Masaki Ueno ,  Takashi Kyono

发明人： Masaki Ueno ,  Takashi Kyono

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S2302/00 ,  H01S2304/04

摘要： A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.

摘要翻译： 制造氮化物半导体激光器的方法包括在氮化镓基半导体区域上形成用于有源层的第一InGaN膜，并且第一InGaN膜具有第一厚度。 在第一InGaN膜的形成中，将第一镓原料，第一铟原料和第一氮原料供给到反应器，以在第一温度下沉积用于形成第一InGaN膜的第一InGaN， 第一InGaN具有比第一厚度更薄的厚度。 接着，将第一InGaN在比反应器中的第一温度低的第二温度下进行热处理，同时向反应器供给第二铟原料和第二氮原料。 然后，在热处理之后，将至少一次沉积第二InGaN以形成第一InGaN膜。

公开(公告)号：US08884306B2

公开(公告)日：2014-11-11

申请号：US13353707

申请日：2012-01-19

申请人： Takashi Kyono ,  Kuniaki Ishihara ,  Akihiro Hachigo ,  Takahisa Yoshida ,  Masaki Ueno ,  Makoto Kiyama

发明人： Takashi Kyono ,  Kuniaki Ishihara ,  Akihiro Hachigo ,  Takahisa Yoshida ,  Masaki Ueno ,  Makoto Kiyama

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L33/00 ,  H01L33/02

CPC分类号： H01L33/007 ,  H01L33/0079 ,  H01L33/025

摘要： A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm−2, and oxygen concentration of at most 5×1018 cm−3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.

摘要翻译： 半导体器件包括支撑衬底，放置在支撑衬底上的导电层和放置在导电层上的至少一个III族氮化物半导体层。 在III族氮化物半导体层中，导电层相邻的III族氮化物半导体层具有n型导电性，位错密度至多为1×107cm-2，氧浓度为至多5×1018cm-3。 因此，可以提供具有高结晶度的半导体层的n型型器件。

公开(公告)号：US08295317B2

公开(公告)日：2012-10-23

申请号：US12878298

申请日：2010-09-09

申请人： Masaki Ueno ,  Takashi Kyono

发明人： Masaki Ueno ,  Takashi Kyono

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S2302/00 ,  H01S2304/04

摘要： A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.

摘要翻译： 制造氮化物半导体激光器的方法包括在氮化镓基半导体区域上形成用于有源层的第一InGaN膜，并且第一InGaN膜具有第一厚度。 在第一InGaN膜的形成中，将第一镓原料，第一铟原料和第一氮原料供给到反应器，以在第一温度下沉积用于形成第一InGaN膜的第一InGaN， 第一InGaN具有比第一厚度更薄的厚度。 接着，将第一InGaN在比反应器中的第一温度低的第二温度下进行热处理，同时向反应器供给第二铟原料和第二氮原料。 然后，在热处理之后，将至少一次沉积第二InGaN以形成第一InGaN膜。

公开(公告)号：US20120205661A1

公开(公告)日：2012-08-16

申请号：US13353707

申请日：2012-01-19

申请人： Takashi KYONO ,  Kuniaki Ishihara ,  Akihiro Hachigo ,  Takahisa Yoshida ,  Masaki Ueno ,  Makoto Kiyama

发明人： Takashi KYONO ,  Kuniaki Ishihara ,  Akihiro Hachigo ,  Takahisa Yoshida ,  Masaki Ueno ,  Makoto Kiyama

IPC分类号： H01L29/20 ,  H01L21/762

CPC分类号： H01L33/007 ,  H01L33/0079 ,  H01L33/025

摘要： A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm−2, and oxygen concentration of at most 5×1018 cm−3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.

摘要翻译： 半导体器件包括支撑衬底，放置在支撑衬底上的导电层和放置在导电层上的至少一个III族氮化物半导体层。 在III族氮化物半导体层中，导电层相邻的III族氮化物半导体层具有n型导电性，位错密度至多为1×107cm-2，氧浓度为至多5×1018cm-3。 因此，可以提供具有高结晶度的半导体层的n型型器件。

公开(公告)号：US07781314B2

公开(公告)日：2010-08-24

申请号：US11958315

申请日：2007-12-17

申请人： Takashi Kyono ,  Masaki Ueno

发明人： Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L21/306 ,  C30B23/02

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/906

摘要： Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing nitrogen, and a Group IIIA element for forming compounds with nitrogen, including steps of: heating the semiconductor substrate (1) to a film-deposition temperature; supplying to the substrate a film-deposition gas containing a source gas for the Group IIIA element and a nitrogen source gas; and epitaxially growing onto the semiconductor substrate a thin film (2) of a compound containing nitrogen and the Group IIIA element; and being furnished with a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the surface of the semiconductor substrate.

摘要翻译： 提供一种能够容易地生产出具有优异的平坦度和结晶度的外延膜的基于氮化物的半导体器件的制造方法。 制造形成在含有氮的化合物的半导体衬底上的氮化物半导体器件的制造方法和用于形成氮化合物的IIIA族元素，包括以下步骤：将半导体衬底（1）加热到成膜温度; 向所述基板供给含有用于所述IIIA族元素的源气体和氮源气体的成膜气体; 并在半导体衬底上外延生长含有氮化合物和IIIA族元素的化合物的薄膜（2）; 并且在外延生长步骤之前，将半导体衬底加热至小于成膜温度的预处理温度，以便清洁半导体衬底的表面。

公开(公告)号：US20080132044A1

公开(公告)日：2008-06-05

申请号：US11958315

申请日：2007-12-17

申请人： Takashi Kyono ,  Masaki Ueno

发明人： Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/906

摘要： Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing nitrogen, and a Group IIIA element for forming compounds with nitrogen, including steps of: heating the semiconductor substrate (1) to a film-deposition temperature; supplying to the substrate a film-deposition gas containing a source gas for the Group IIIA element and a nitrogen source gas; and epitaxially growing onto the semiconductor substrate a thin film (2) of a compound containing nitrogen and the Group IIIA element; and being furnished with a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the surface of the semiconductor substrate.

摘要翻译： 提供一种能够容易地生产出具有优异的平坦度和结晶度的外延膜的基于氮化物的半导体器件的制造方法。 制造形成在含有氮的化合物的半导体衬底上的氮化物半导体器件的制造方法和用于形成氮化合物的IIIA族元素，包括以下步骤：将半导体衬底（1）加热到成膜温度; 向所述基板供给含有用于所述IIIA族元素的源气体和氮源气体的成膜气体; 并在半导体衬底上外延生长含有氮化合物和IIIA族元素的化合物的薄膜（2）; 并且在外延生长步骤之前，将半导体衬底加热至小于成膜温度的预处理温度，以便清洁半导体衬底的表面。

公开(公告)号：US20050173715A1

公开(公告)日：2005-08-11

申请号：US10514261

申请日：2004-02-19

申请人： Takashi Kyono ,  Masaki Ueno

发明人： Takashi Kyono ,  Masaki Ueno

IPC分类号： C23C16/02 ,  C23C16/34 ,  C30B25/02 ,  H01L21/205 ,  H01L33/32 ,  H01L29/22

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/906

摘要： Affords a manufacturing method enabling nitride-based semiconductor devices containing epitaxial films excelling in flatness and crystallinity to be easily produced, and makes available nitride-based semiconductor devices manufactured by the method. Method of manufacturing nitride semiconductor devices that are formed onto a semiconductor substrate being a compound containing a Group IIIA element for forming compounds with nitrogen, and nitrogen, including steps of heating the semiconductor substrate (1) to a film-deposition temperature, supplying to the substrate a film-deposition gas containing a source gas for the Group IIIA element and a nitrogen source gas, and epitaxially growing onto the semiconductor substrate a thin film (2) of a compound containing the Group IIIA element and nitrogen, and being furnished with a step, in advance of the epitaxial growth step, of heating the semiconductor substrate to a pretreating temperature less than the film-deposition temperature, to clean the surface of the semiconductor substrate.

摘要翻译： 提供一种使得能够容易地制造含有优异的平坦度和结晶度的外延膜的基于氮化物的半导体器件的制造方法，并且使得可获得通过该方法制造的氮化物基半导体器件。 制造形成在半导体衬底上的氮化物半导体器件的方法是含有用于形成氮化合物的IIIA族元素的化合物和氮，包括将半导体衬底（1）加热至膜沉积温度的步骤，供给至 对包含IIIA族元素和氮源气体的源气体的成膜气体进行基板的外延生长在半导体基板上的含有IIIA族元素和氮的化合物的薄膜（2），并配备有 步骤，在外延生长步骤之前，将半导体衬底加热至小于成膜温度的预处理温度，以清洁半导体衬底的表面。