公开(公告)号：US08927962B2

公开(公告)日：2015-01-06

申请号：US13055690

申请日：2010-02-26

申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L29/66 ,  H01L33/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01S5/3202

摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.

摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。 主表面13a具有半极性。 活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。 多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

公开(公告)号：US20130003769A1

公开(公告)日：2013-01-03

申请号：US13431043

申请日：2012-03-27

申请人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/34 ,  H01L21/18

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2304/04

摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.

摘要翻译： 具有降低的阈值电流的氮化镓基半导体激光器件。 氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚 第23层。

公开(公告)号：US20120299010A1

公开(公告)日：2012-11-29

申请号：US13484776

申请日：2012-05-31

申请人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/32

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴 半导体和设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括GaN基半导体层。 基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。 基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US08174035B2

公开(公告)日：2012-05-08

申请号：US12836090

申请日：2010-07-14

申请人： Takamichi Sumitomo ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi

发明人： Takamichi Sumitomo ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333

摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.

摘要翻译： 目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。 提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

公开(公告)号：US07955881B2

公开(公告)日：2011-06-07

申请号：US12500074

申请日：2009-07-09

申请人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

发明人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06

摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.

摘要翻译： 在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。 阱层包含含有铟作为成分的III族氮化物半导体。 在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。 中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。 阻挡层在高于第一温度的第二温度下在中间层上生长。 包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

公开(公告)号：US07883915B2

公开(公告)日：2011-02-08

申请号：US12429322

申请日：2009-04-24

申请人： Masaki Ueno ,  Takashi Kyono

发明人： Masaki Ueno ,  Takashi Kyono

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S2302/00 ,  H01S2304/04

摘要： A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.

摘要翻译： 制造氮化物半导体激光器的方法包括在氮化镓基半导体区域上形成用于有源层的第一InGaN膜，并且第一InGaN膜具有第一厚度。 在第一InGaN膜的形成中，将第一镓原料，第一铟原料和第一氮原料供给到反应器，以在第一温度下沉积用于形成第一InGaN膜的第一InGaN， 第一InGaN具有比第一厚度更薄的厚度。 接着，将第一InGaN在比反应器中的第一温度低的第二温度下进行热处理，同时向反应器供给第二铟原料和第二氮原料。 然后，在热处理之后，将至少一次沉积第二InGaN以形成第一InGaN膜。

公开(公告)号：US06998284B2

公开(公告)日：2006-02-14

申请号：US11057830

申请日：2005-02-15

申请人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

发明人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/34333

摘要： A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium; (b) forming a first barrier film on the well film, the first barrier film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium, and an indium composition of the first barrier film being smaller than that of the well film; (c) changing temperature without forming a semiconductor film; and (d) forming a second barrier film at a second temperature higher than the first temperature, the second barrier film being made of a III-V nitride semiconductor on the first barrier film, the first barrier film being formed at a third temperature, the third temperature being equal to or higher than the first temperature, and the third temperature being lower than the second temperature.

摘要翻译： 一种形成具有量子阱结构的半导体器件的方法包括以下步骤：（a）在第一温度下形成阱膜，阱膜由含有氮，铟和镓的III-V族氮化物半导体制成; （b）在所述阱膜上形成第一阻挡膜，所述第一阻挡膜由包含氮，铟和镓的III-V族氮化物半导体制成，并且所述第一阻挡膜的铟组合物小于所述阱膜的铟组分 ; （c）不形成半导体膜而改变温度; 和（d）在高于第一温度的第二温度下形成第二阻挡膜，第二阻挡膜由第一阻挡膜上的III-V族氮化物半导体构成，第一阻挡膜形成在第三温度， 第三温度等于或高于第一温度，第三温度低于第二温度。

公开(公告)号：US20050199903A1

公开(公告)日：2005-09-15

申请号：US11057830

申请日：2005-02-15

申请人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

发明人： Takashi Kyono ,  Masaki Ueno ,  Katsushi Akita

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L29/24

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/34333

摘要： A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium; (b) forming a first barrier film on the well film, the first barrier film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium, and an indium composition of the first barrier film being smaller than that of the well film; (c) changing temperature without forming a semiconductor film; and (d) forming a second barrier film at a second temperature higher than the first temperature, the second barrier film being made of a III-V nitride semiconductor on the first barrier film, the first barrier film being formed at a third temperature, the third temperature being equal to or higher than the first temperature, and the third temperature being lower than the second temperature.

摘要翻译： 一种形成具有量子阱结构的半导体器件的方法包括以下步骤：（a）在第一温度下形成阱膜，阱膜由含有氮，铟和镓的III-V族氮化物半导体制成; （b）在所述阱膜上形成第一阻挡膜，所述第一阻挡膜由包含氮，铟和镓的III-V族氮化物半导体制成，并且所述第一阻挡膜的铟组合物小于所述阱膜的铟组分 ; （c）不形成半导体膜而改变温度; 和（d）在高于第一温度的第二温度下形成第二阻挡膜，第二阻挡膜由第一阻挡膜上的III-V族氮化物半导体构成，第一阻挡膜形成在第三温度， 第三温度等于或高于第一温度，第三温度低于第二温度。

公开(公告)号：US08917750B2

公开(公告)日：2014-12-23

申请号：US13328622

申请日：2011-12-16

申请人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

发明人： Masahiro Adachi ,  Shinji Tokuyama ,  Yohei Enya ,  Takashi Kyono ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/22

CPC分类号： H01S5/2004 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/309 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2302/00

摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

摘要翻译： 提供能够以低阈值激光的III族氮化物半导体激光二极管。 支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。 在支撑基体的主表面上方设置有n型包层区域和p型包层区域。 芯型半导体区域设置在n型包层区域和p型包层区域之间。 芯半导体区域包括第一光导层，有源层和第二光导层。 有源层设置在第一光导层和第二光导层之间。 芯半导体区域的厚度不小于0.5μm。 这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

公开(公告)号：US08884306B2

公开(公告)日：2014-11-11

申请号：US13353707

申请日：2012-01-19

申请人： Takashi Kyono ,  Kuniaki Ishihara ,  Akihiro Hachigo ,  Takahisa Yoshida ,  Masaki Ueno ,  Makoto Kiyama

发明人： Takashi Kyono ,  Kuniaki Ishihara ,  Akihiro Hachigo ,  Takahisa Yoshida ,  Masaki Ueno ,  Makoto Kiyama

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L33/00 ,  H01L33/02

CPC分类号： H01L33/007 ,  H01L33/0079 ,  H01L33/025

摘要： A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm−2, and oxygen concentration of at most 5×1018 cm−3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.

摘要翻译： 半导体器件包括支撑衬底，放置在支撑衬底上的导电层和放置在导电层上的至少一个III族氮化物半导体层。 在III族氮化物半导体层中，导电层相邻的III族氮化物半导体层具有n型导电性，位错密度至多为1×107cm-2，氧浓度为至多5×1018cm-3。 因此，可以提供具有高结晶度的半导体层的n型型器件。